EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
93LC56A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5	YES	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS	e3	30	260	.000001 Amp	4.9 mm
XC17128ELPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17128ELPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17128EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17128EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17256ELPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17256ELPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17256EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17256EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC1736EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	36288X1	36288	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC1765ELPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		2.5 MHz	7.62 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC1765ELPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		2.5 MHz	7.62 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC1765EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC1765EPD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	9.3599 mm
XC17128ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17128ELVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17128EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17128EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17256ELVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17256EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17256EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		15 MHz	3.937 mm	Not Qualified			262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1736ESO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	36288X1	36288	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1736ESO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	36288X1	36288	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.5 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1736EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	36288X1	36288	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1736EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	36288X1	36288	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765ELSO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.7272 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765ELSO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.7272 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765ELVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765ESO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765ESO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.5 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC1765EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G8	3	5.5 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	4.9276 mm
XC17128ELPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel		3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17128ELPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17128EPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel		3-STATE	128KX1	128K	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17128EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	128KX1	128K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.5 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17256ELPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	262144 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17256EPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel		3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17256EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.5 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1736EPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel		3-STATE	36288X1	36288	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1736EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	36288X1	36288	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.5 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified			36288 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1765ELPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1765ELPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1765EPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel		3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1765EPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5		5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J20	3	5.5 V	4.572 mm		10 MHz	8.9662 mm	Not Qualified			65536 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
AT24C02N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2-WIRE SERIAL INTERFACE	e0			.000018 Amp	4.89 mm
AT24C08N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	Tin/Lead (Sn/Pb)			DUAL			R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	2-WIRE SERIAL INTERFACE	e0	30	240	.000018 Amp	4.89 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.