EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XC18V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		256KX8	256K	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			2097152 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04PC44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	10	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V256PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V256SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V256SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V256VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V256VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V512PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD		DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC18V512SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V512VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V512VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
M24128-BWDW6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e0				.000005 Amp	4.4 mm
M24128-BWMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words		5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e0				.000002 Amp	4.9 mm
M24256-BWMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words		5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e0				.000002 Amp	4.9 mm
M34D64-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V		e4				.000002 Amp	4.9 mm
M95020-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	5 mA	256 words		5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	4.5 V		e0				.000002 Amp	4.9 mm
M95040-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	2 mA	512 words		5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e0				.000002 Amp	4.9 mm
XC17V01PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V01SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	12.8 mm
XC17V01SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	12.8 mm
XC17V01VO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		15 MHz	3.9 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	4.9 mm
XC17V01VO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm		15 MHz	3.9 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	4.9 mm
XC17V02PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V02PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V02VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			2097152 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			2097152 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V04PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V04PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC17V04PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V04VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32	OTP ROMs		.8 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		15 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V08PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			8388608 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V08PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			8388608 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V08VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			8388608 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V08VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			8388608 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V16PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			16777216 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V16PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQCC-J44	3	3.6 V	4.57 mm		20 MHz	16.5862 mm	Not Qualified			16777216 bit	3 V		e0	30	225		.001 Amp	16.5862 mm
XC17V16VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC17V16VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified			16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
24LC16B-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	40	260		.000005 Amp	4.4 mm		5
24LC64XT-E/ST	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260		.000005 Amp	4.4 mm		4.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.