BGA Flash Memory 71

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC28F640P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM			S-PBGA-B64							Not Qualified		TOP	67108864 bit		8				NOR TYPE	.002 Amp		YES	60 ns		NO
RC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	536870912 bit		4				NOR TYPE	.000005 Amp		YES	85 ns		NO
PC28F320J3F75E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			33554432 bit		4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
PC28F128J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			134217728 bit		4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F640P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM			S-PBGA-B64							Not Qualified		TOP	67108864 bit		8				NOR TYPE	.000055 Amp		YES	65 ns		NO
PC28F128P30BF65E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	134217728 bit		8				NOR TYPE	.000055 Amp		YES	65 ns		NO
MT29F16G08ABCCBH1-10:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			17179869184 bit		4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F8G08ABCBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		1GX8	1G	0 Cel	2K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			8589934592 bit		4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F8G08ABCBBH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		1GX8	1G	-40 Cel	2K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			8589934592 bit		4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F32G08ABCABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			34359738368 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AECABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AECABH1-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel				0 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			274877906944 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel				-40 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			274877906944 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AKCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AMCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AMCABH2-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AKCCBH2-10Z:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	8589934592 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit		4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F32G08ABCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			34359738368 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AECABH1-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AECABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			68719476736 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AKCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AKCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AMCABH2-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K		30	260	SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AMCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	17179869184 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			137438953472 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel				-40 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			274877906944 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F256G08AUCABH3-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA			NO	1.8,3/3.3		GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel				0 Cel	32K	YES		YES	BOTTOM			R-PBGA-B100							Not Qualified			274877906944 bit		8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
N25Q064A13E14D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	8388608 words			3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24				100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.0001 Amp
M29W128GL70ZA6DE	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			134217728 bit		8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSH70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			134217728 bit		8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			134217728 bit		8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			134217728 bit		8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM			S-PBGA-B64							Not Qualified			134217728 bit		8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
MT29F8G08ADBFAH4-AAT:FTR	Micron Technology	FLASH			BGA	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1073741824 words				8	GRID ARRAY						105 Cel		1GX8	1G	-40 Cel					BOTTOM			X-PBGA-B										8589934592 bit				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE
MTFC8GLWDM-3LAATZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel				YES	BOTTOM			R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				68719476736 bit	2.7 V							13 mm
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY						85 Cel		16GX8	16G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V								137438953472 bit	2.7 V										2.7
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY						85 Cel		32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B169		3.6 V								274877906944 bit	2.7 V										2.7
MT29F4G16ABADAH4-AIT:D	Micron Technology	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY						85 Cel		256MX16	256M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63										4294967296 bit			e1	30	260	SLC NAND TYPE					3.3
SST26WF016BAT-104I/CS	Microchip Technology	FLASH	INDUSTRIAL	8	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	GRID ARRAY	BGA8,3X5,23			100	.886 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B8		1.95 V	.64 mm	100000 Write/Erase Cycles	104 MHz			SPI		16777216 bit	1.65 V					NOR TYPE	.000005 Amp				1.8
THGBMJG6C1LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				68719476736 bit	2.7 V							13 mm
MTFC16GAPALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm				137438953472 bit	2.7 V					NAND TYPE		13 mm
MTFC16GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM			R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm				137438953472 bit	2.7 V					NOR TYPE		18 mm
THGBMJG8C2LBAIL	Kioxia Holdings	FLASH CARD	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	85 Cel		32GX8	32G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				274877906944 bit	2.7 V							13 mm
THGBMJG8C4LBAU8	Kioxia Holdings	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					34359738368 words				8	GRID ARRAY	BGA153,14X14,20				.5 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V				11 mm				274877906944 bit	2.7 V							13 mm
S25HS02GTFABHV153	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	2 V			166 MHz			SPI		2147483648 bit	1.7 V					NOR TYPE					1.8
S26HL02GTFGBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HL02GTFGBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	3.6 V			133 MHz					2147483648 bit	2.7 V					NOR TYPE					3
S26HS02GTFPBHM053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						125 Cel		2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	2 V			166 MHz					2147483648 bit	1.7 V					NOR TYPE					1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.