BGA Flash Memory 71

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Type	Programming Voltage (V)
S26HL02GTFGBHM040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	3	1	GRID ARRAY	125 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	3.6 V	133 MHz		2147483648 bit	2.7 V	NOR TYPE	3
S26HL02GTFGBHM043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	3	1	GRID ARRAY	125 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	3.6 V	133 MHz		2147483648 bit	2.7 V	NOR TYPE	3
S26HS02GTFPBHB053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S28HS02GTFPBHV053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHV033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	105 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S26HS02GTFPBHM050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	125 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHB033	Infineon Technologies	FLASH	24	BGA		PLASTIC/EPOXY		1	CMOS	AEC-Q100		SYNCHRONOUS	1073741824 words	1.8		GRID ARRAY	105 Cel	1GX1		-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHV030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	105 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHM033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	125 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHM030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	125 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHI033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	85 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S26HS02GTFPBHM043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	125 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S26HS02GTFPBHM040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	125 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHA033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	85 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHB030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	105 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S28HS01GTGZBHI030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			SYNCHRONOUS	1073741824 words	1.8	1	GRID ARRAY	85 Cel	1GX1	1G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	200 MHz	SPI	1073741824 bit	1.7 V	NOR TYPE	1.8
S25HS02GTFABHV150	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S26HS02GTFPBHB043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S26HS02GTFPBHB050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S26HL02GTFGBHB053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	3	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	3.6 V	133 MHz		2147483648 bit	2.7 V	NOR TYPE	3
S26HS02GTFPBHB040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8
S26HL02GTFGBHB040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	2147483648 words	3	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	3.6 V	133 MHz		2147483648 bit	2.7 V	NOR TYPE	3
S28HS02GTFPBHV050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	2147483648 words	1.8	1	GRID ARRAY	105 Cel	2GX1	2G	-40 Cel	BOTTOM	S-PBGA-B24	3	2 V	166 MHz		2147483648 bit	1.7 V	NOR TYPE	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.