SOP Flash Memory 245

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q064A11ESEA0F	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE					1.27 mm	125 Cel		8MX8	8M	-40 Cel					DUAL			S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm		1.8
N25Q128A13ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.285 mm				134217728 bit	2.7 V					NOR TYPE		5.285 mm		3
N25Q128A13ESFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm		3
N25Q256A73ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm				268435456 bit	2.7 V			30	260	NOR TYPE		10.3 mm		3
M25P20-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		2097152 bit	2.3 V			30	260	NOR TYPE	.000005 Amp	4.9 mm		2.7
N25Q512A13GSFH0E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	67108864 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.5 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm		SPI		536870912 bit	2.7 V					NOR TYPE	.0005 Amp	10.3 mm
M25P32-VMW3GB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		75 MHz	5.285 mm				33554432 bit	2.7 V			30	260			5.285 mm		2.7
W25Q64FVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words				8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm	Not Qualified	SPI		67108864 bit	3 V		e3	30	260		.00005 Amp	5.28 mm
M25P16-VMF6PBA	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.3 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified	SPI		16777216 bit	2.7 V			30	260	NOR TYPE	.00001 Amp	10.3 mm		2.7
M25P16-VMN3YPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm		2.7
M25P40-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			15 mA	524288 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		4194304 bit				30	260	NOR TYPE	.00001 Amp			2.7
MX66L51235FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		40 mA	134217728 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified	SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT	e3			NOR TYPE	.00004 Amp	10.3 mm		3
M25P10-AVMN6PYA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE						85 Cel		128KX8	128K	-40 Cel					DUAL			R-PDSO-G8		3.6 V			50 MHz					1048576 bit	2.3 V			30	260	NOR TYPE				2.7
W25Q16CVSSJG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm			5.23 mm				16777216 bit	2.7 V							5.23 mm		2.7
W25Q16DVSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	4 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5 mm		2.7
N25Q064A13ESEH0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			5.285 mm		3
W25Q40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified	SPI		4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm		3
SST26WF016B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm		1.8
SST26WF016BA-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm		1.8
SST26WF016BAT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm		1.8
SST26WF016BT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm		SPI		16777216 bit	1.65 V		e3	40	260	NOR TYPE	.000005 Amp	4.9 mm		1.8
W25Q64FWSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	1.8		1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		1.95 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified	SPI		67108864 bit	1.65 V		e3			NOR TYPE	.00002 Amp	5.28 mm		1.8
SST25WF080B-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words	1.8			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm		SPI		8388608 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm		1.8
SST25WF080BT-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words	1.8			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm		SPI		8388608 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm		1.8
N25Q064A13ESF42G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm				67108864 bit	2.7 V					NOR TYPE		10.3 mm		2.7
M25P16-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm		2.7
M25P16-VMN6YPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm		2.7
N25Q512A81GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm				536870912 bit	1.7 V					NOR TYPE		10.3 mm		1.8
MT28F800B3SG-9BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm	90 ns	3	NO
MT28F800B3SG-9B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm	90 ns	3	NO
MT28F800B3SG-9TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm	90 ns	3	NO
MT28F800B3SG-9T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm	90 ns	3	NO
MT28F800B5SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F800B5SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F800B5SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F400B5SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	Tin/Lead (Sn/Pb)		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK	e0	30	235	NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F400B5SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F400B5SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F400B5SG-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MX29F800CBMI-70G	Macronix	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN	YES	DUAL			R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.00005 Amp	28.5 mm	70 ns	5	YES
LE25S81MCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			8	SMALL OUTLINE					1.27 mm	90 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G8		1.95 V	1.75 mm		40 MHz	3.9 mm				8388608 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm		1.8
LE25U81AMCTWG	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	2.5			8	SMALL OUTLINE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-G8		2.7 V	1.75 mm		40 MHz	3.9 mm				8388608 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm		2.7
N25Q064A13ESED0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm		2.7
N25Q064A13ESED0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm		2.7
AT26DF161A-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		20 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V					NOR TYPE	.000015 Amp	4.925 mm		2.7
M29F200BB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL			R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.0001 Amp	28.5 mm	70 ns	5	YES
M29F200BT70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL			R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e3			NOR TYPE	.0001 Amp	28.5 mm	70 ns	5	YES
AT25DF321-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	3.6 V	2.16 mm	100000 Write/Erase Cycles	70 MHz	5.24 mm	Not Qualified	SPI		33554432 bit	2.7 V		e3			NOR TYPE	.000025 Amp	5.29 mm		2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.