SOP Flash Memory 245

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
IS25LQ032B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		32MX1	32M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm					33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm			2.7
MX25L3233FM1I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.65 V	ALSO ORGANISED AS 32MX1		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm			3
N25Q00AA11GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		10.3 mm			1.8
MX25L51245GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		104 MHz	7.52 mm					536870912 bit	2.7 V	CAN BE ORGNISED AS 512 MBIT X 1	e3	40	260			10.3 mm			2.7
MX66L1G45GMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		256MX4	256M	-40 Cel			TIN		DUAL			R-PDSO-G16		3.6 V	2.65 mm		104 MHz	7.52 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT	e3					10.3 mm			2.7
EPCQ512SI16N	Altera	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			536870912 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm			7.5 mm		8 ms			536870912 bit	2.7 V		e4			NOR TYPE		10.3 mm			2.7
MX25L1606EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			3
MT28F400B3SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3SG-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL			R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
M29F800DB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK	e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
M29F800DT70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK	e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
W25Q64BVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm	Not Qualified		SPI		67108864 bit	2.7 V					NOR TYPE	.000005 Amp	5.28 mm			2.7
MT28F400B5SP-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN SILVER COPPER		DUAL			R-PDSO-G44		5.5 V	2.7 mm			12.6 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK	e1		260	NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
AT45DB041B-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		20 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3	40	260	NOR TYPE	.00001 Amp	5.29 mm			2.7
M29F400BB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G44		5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK	e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F400BT70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G44		5.5 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK	e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
AT25SF041-SSHDHR-T	Adesto Technologies	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE						125 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V			85 MHz						4194304 bit	2.5 V										2.7
SST26VF032BEUI-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		33554432 bit	2.7 V					NOR TYPE	.000045 Amp	5.26 mm			3
MX25U12832FMI02	Macronix	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		134217728 bit	1.65 V					NOR TYPE	.000005 Amp	10.3 mm			1.8
MT25QU256ABA8ESF-0AATTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm			SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	10.3 mm			1.8
MT29F1G01ABBFDSF-IT:F	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	134217728 words	1.8			8	SMALL OUTLINE	SOP16,.4			10	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		1.95 V	2.65 mm	100000 Write/Erase Cycles	83 MHz	7.5 mm			SPI		1073741824 bit	1.7 V					SLC NAND TYPE	.00005 Amp	10.3 mm			1.8
MX25L12845GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.23 mm					134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3					5.28 mm			3
LE25S20MB-AH	Onsemi	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	1.8		1.8	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			1.8
IS25LQ010B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		1MX1	1M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					1048576 bit	2.3 V		e3	30	260			4.9 mm			3
IS25LQ020B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		2MX1	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm					2097152 bit	2.3 V							5.28 mm			3
IS25LQ025B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					262144 bit	2.3 V		e3	30	260			4.9 mm			3
IS25LQ040B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		4MX1	4M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					4194304 bit	2.3 V		e3	30	260			4.9 mm			3
MX25L25645GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm			SPI		268435456 bit	2.7 V		e3			NOR TYPE	.00002 Amp	5.28 mm			3
MX25L6433FMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	16777216 words	3			4	SMALL OUTLINE	SOP16,.4	2		20	1.27 mm	85 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3	40	260	NOR TYPE	.00002 Amp	10.3 mm			3
IS25LP064A-JMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		67108864 bit	2.3 V		e3	10	260	NOR TYPE	.000035 Amp	10.3 mm			3
MX35LF2GE4AB-MI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	268435456 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	10	1.27 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel			MATTE TIN		DUAL		HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.52 mm	Not Qualified		SPI		2147483648 bit	2.7 V		e3			SLC NAND TYPE	.00005 Amp	10.3 mm			3
MX25U51245GMI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT	e3			NOR TYPE		10.3 mm			1.8
SST26VF016BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		16777216 bit	2.7 V		e3			NOR TYPE	.000025 Amp	5.26 mm			3
M45PE40S-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		75 MHz	3.9 mm					2097152 bit	2.7 V					NOR TYPE		4.9 mm			2.7
SST26VF064B-104V/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	10.3 mm			3
SST26VF064BT-104V/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	10.3 mm			3
AT45DB041D-SSU-SL383	Adesto Technologies	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		4MX1	4M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm					4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH	e3			NOR TYPE		4.925 mm			2.7
MX25R1635FM2IH1	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	2.16 mm		80 MHz	5.23 mm					16777216 bit	1.65 V	IT IS ALSO CONFIGURED AS 16M X 1						5.28 mm			3
MT25QL128ABA1ESE-MSIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm					134217728 bit	2.7 V			30	260			5.285 mm			3.3
IS25LP256D-JMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	10.31 mm			3
IS25LP256D-RMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	10.31 mm			3
MT25QU256ABA8ESF-MSIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm			1.8
N25Q256A81ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	1.7 V							10.3 mm			1.8
SST26WF040B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		4194304 bit	1.65 V		e3			NOR TYPE	.000005 Amp	4.9 mm			1.8
SST26WF064C-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	1.8			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		67108864 bit	1.65 V		e3			NOR TYPE	.000015 Amp	5.26 mm			1.8
M25P40-VMN6TPBATR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	2.7			8	SMALL OUTLINE					1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		50 MHz	3.9 mm					4194304 bit	2.3 V			30	260	NOR TYPE		4.9 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.