COMMERCIAL Flash Memory 249

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39VF040-70-4C-NHE-T	Microchip Technology	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	4K	30 mA	524288 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX8	512K	128	YES	MATTE TIN		QUAD	1		R-PQCC-J32	3	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	2.7 V			e3		245	NOR TYPE	.000015 Amp	13.97 mm		70 ns	3	YES
SST39VF3201-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX16	2M	1K	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST25PF020B-80-4C-QAE	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		30 mA	2097152 words			2.5/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	100	1.27 mm	70 Cel	3-STATE	2MX1	2M			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm	Not Qualified	SPI		2097152 bit	2.3 V			e3			NOR TYPE	.00003 Amp	6 mm
MT29F2G16ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		128MX16	128M	2K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	2.7	NO
MT29F2G08ABBEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		256MX8	256M	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F2G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		128MX16	128M	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F4G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		512MX8	512M	4K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F4G16ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		256MX16	256M	4K	YES		YES	BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MT29F4G16ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		256MX16	256M	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns		NO
MT29F4G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		256MX16	256M	4K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F4G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		256MX16	256M	4K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified			4294967296 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	13 mm		25 ns		NO
MT29F8G08ADBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		1GX8	1G	8K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			8589934592 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns		NO
MT29F128G08CEAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		16GX8	16G					BOTTOM			R-PBGA-B52		3.6 V	1 mm			14 mm				137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CECABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F128G08CECABH1-12:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				137438953472 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CECABH1-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F128G08CFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		16GX8	16G			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		16GX8	16G			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAABWP-12:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		16GX8	16G			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAABWP-12Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		16GX8	16G			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		32GX8	32G			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		32GX8	32G			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAABWP-12:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		32GX8	32G			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAABWP-12Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		32GX8	32G			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CKCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		32GX8	32G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CKCABH2-12:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		32GX8	32G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CKCABH2-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		32GX8	32G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CMAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		32GX8	32G					BOTTOM			R-PBGA-B52		3.6 V	1 mm			14 mm				274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABH2-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		32GX8	32G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABH2-12:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		32GX8	32G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.2 mm			12 mm				274877906944 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		64GX8	64G					BOTTOM			R-PBGA-B52		3.6 V	1 mm			14 mm				549755813888 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUCABH3-10:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		64GX8	64G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			12 mm				549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUCABH3-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		64GX8	64G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			12 mm				549755813888 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F512G08CUCABH3-12:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		64GX8	64G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			12 mm				549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08CBAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		8GX8	8G			Matte Tin (Sn)		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		8GX8	8G			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBAABWP-12Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		8GX8	8G			MATTE TIN		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBCABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		8GX8	8G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F64G08CBCABH1-12:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		8GX8	8G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08CBCABH1-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		8GX8	8G			TIN SILVER COPPER		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F128G08AUABAC5:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		16GX8	16G					BOTTOM			R-PBGA-B52		3.6 V	1 mm			14 mm				137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08AUCBBH3-12:B	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		16GX8	16G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1.4 mm			12 mm				137438953472 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F16G08ABABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		2GX8	2G	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			17179869184 bit	2.7 V		4K	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F16G08ABCBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	1.8,3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories		1 mm	70 Cel		2GX8	2G	4K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm	Not Qualified			17179869184 bit	2.7 V		4K	e1			SLC NAND TYPE	.00005 Amp	18 mm		20 ns	2.7	NO
MT29F32G08AECBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		4GX8	4G			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B100		3.6 V	1 mm			12 mm				34359738368 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm			2.7
MT29F32G08AFABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		4GX8	4G	8K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			34359738368 bit	2.7 V		4K	e3			SLC NAND TYPE		18.4 mm		20 ns	2.7	NO
MT29F64G08AJABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	8589934592 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		8GX8	8G	16K	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			68719476736 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F64G08AKABAC5:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		8GX8	8G					BOTTOM			R-PBGA-B52		3.6 V	1 mm			14 mm				68719476736 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.