COMMERCIAL Flash Memory 249

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F8G16ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		512MX16	512M	4K	YES		YES	DUAL		R-PDSO-G48					Not Qualified	8589934592 bit			2K				SLC NAND TYPE	.0001 Amp		25 ns	3.3	NO
MT29F16G08ADBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		2GX8	2G	8K	YES		YES	BOTTOM		R-PBGA-B63					Not Qualified	17179869184 bit			4K				SLC NAND TYPE	.00005 Amp		30 ns	1.8	NO
MT29F8G08ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		1GX8	1G	4K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm		9 mm	Not Qualified	8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	11 mm			NO
MT29F16G16ADBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	20 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		1GX16	1G	8K	YES		YES	BOTTOM		R-PBGA-B63					Not Qualified	17179869184 bit			2K				SLC NAND TYPE	.00005 Amp		30 ns	1.8	NO
MT29F16G08ADACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		2GX8	2G	8K	YES		YES	BOTTOM		R-PBGA-B63					Not Qualified	17179869184 bit			4K				SLC NAND TYPE	.0001 Amp		25 ns	3.3	NO
MT29F8G08ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		1GX8	1G	4K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	8589934592 bit	2.7 V		4K				SLC NAND TYPE	.0001 Amp	18.4 mm			NO
MT29F16G16ADACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	1073741824 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		1GX16	1G	8K	YES		YES	BOTTOM		R-PBGA-B63					Not Qualified	17179869184 bit			2K				SLC NAND TYPE	.0001 Amp		25 ns	3.3	NO
MT29F8G08ABBCAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	20 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		1GX8	1G	4K	YES		YES	BOTTOM		R-PBGA-B63					Not Qualified	8589934592 bit			4K				SLC NAND TYPE	.00005 Amp		30 ns	1.8	NO
MT29F8G16ABACAH4:C	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		512MX16	512M	4K	YES		YES	BOTTOM		R-PBGA-B63					Not Qualified	8589934592 bit			2K				SLC NAND TYPE	.0001 Amp		25 ns	3.3	NO
MT29F1G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		128MX8	128M	1K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm		9 mm	Not Qualified	1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		128MX8	128M	1K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm		10.5 mm	Not Qualified	1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		64MX16	64M	1K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm		9 mm	Not Qualified	1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		64MX16	64M	1K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm		10.5 mm	Not Qualified	1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
SST39SF010A-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	Flash Memories	100	.5 mm	70 Cel	3-STATE	128KX8	128K	32	YES			DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
MT29F2G08ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel		256MX8	256M	2K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm		10.5 mm	Not Qualified	2147483648 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MTFDDAK120MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL				128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		120GX8	120G					SINGLE		R-XSMA-X22	5.5 V	7.2 mm		69.85 mm		1030792151040 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MTFDDAK240MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED					257698037760 words	5			8	FLANGE MOUNT					70 Cel		240GX8	240G		NO			UNSPECIFIED		R-XXFM-X22	5.5 V	7 mm		69.85 mm		2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK240MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL				257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		240GX8	240G					SINGLE		R-XSMA-X22	5.5 V	7.2 mm		69.85 mm		2061584302080 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MTFDDAK480MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED					515396075520 words	5			8	FLANGE MOUNT					70 Cel		480GX8	480G		NO			UNSPECIFIED		R-XXFM-X22	5.5 V	7 mm		69.85 mm		4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK480MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL				515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G					SINGLE		R-XSMA-X22	5.5 V	7.2 mm		69.85 mm		4123168604160 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MTFDDAK800MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED					858993459200 words	5			8	FLANGE MOUNT					70 Cel		800GX8	800G		NO			UNSPECIFIED		R-XXFM-X22	5.5 V	7 mm		69.85 mm		6871947673600 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK960MBP-1AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED					1030792151040 words	5			8	FLANGE MOUNT					70 Cel		960GX8	960G		NO			UNSPECIFIED		R-XXFM-X22	5.5 V	7 mm		69.85 mm		8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm		5	NO
MTFDDAK960MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL				1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		960GX8	960G					SINGLE		R-XSMA-X22	5.5 V	7.2 mm		69.85 mm		8246337208320 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm		5
MT29F32G08AECCBH1-10:C	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories		1 mm	70 Cel		4GX8	4G	8K	YES		YES	BOTTOM		R-PBGA-B100	3.6 V	1 mm		12 mm	Not Qualified	34359738368 bit	2.7 V		4K				SLC NAND TYPE		18 mm	20 ns	2.7	NO
MT29F32G08AFACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		4GX8	4G	8K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	34359738368 bit	2.7 V		4K				SLC NAND TYPE		18.4 mm	20 ns	2.7	NO
MT29F32G08AFACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		4GX8	4G	8K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	34359738368 bit	2.7 V		4K				SLC NAND TYPE		18.4 mm	20 ns	2.7	NO
MT29F32G08AECCBH1-10Z:C	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories		1 mm	70 Cel		4GX8	4G	8K	YES		YES	BOTTOM		R-PBGA-B100	3.6 V	1 mm		12 mm	Not Qualified	34359738368 bit	2.7 V		4K				SLC NAND TYPE		18 mm	20 ns	2.7	NO
MT29F16G08ABACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		2GX8	2G	4K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18.4 mm	20 ns	2.7	NO
MT29F2G08ABBEAH4:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		256MX8	256M			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	1.95 V	1 mm		9 mm		2147483648 bit	1.7 V			e1			SLC NAND TYPE		11 mm		1.8
MT29F2G16ABDHC:DTR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		128MX16	128M			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	1.95 V	1 mm		10.5 mm		2147483648 bit	1.65 V			e1			SLC NAND TYPE		13 mm		1.8
MT29F2G08AADWP:DTR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		256MX8	256M			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm		2147483648 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm		3.3
MT29F1G08ABADAH4:DTR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		128MX8	128M			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	3.6 V	1 mm		9 mm		1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm		3.3
MTFDHAL1T2MCF-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		1200GX8	1.2T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAL1T6MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		1600GX8	1.6T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAL2T4MCF-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		2400GX8	2.4T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAL3T2MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		3200GX8	3.2T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAL800MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		800GX8	800G					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAX1T2MCF-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		1200GX8	1.2T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAX1T6MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		1600GX8	1.6T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAX2T4MCF-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		2400GX8	2.4T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAX3T2MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		3200GX8	3.2T					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MTFDHAX800MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS	UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		800GX8	800G					UNSPECIFIED		R-XXMA-X	3.564 V						3.036 V	SOLID STATE DRIVE					NAND TYPE
MT29F1G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		64MX16	64M					BOTTOM		R-PBGA-B63	1.95 V	1 mm		10.5 mm		1073741824 bit	1.7 V						SLC NAND TYPE		13 mm		1.8
MT29F128G08CBCCBH6-6R:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G					BOTTOM		R-PBGA-B152	3.6 V	1 mm		14 mm		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F128G08CBECBH6-12:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G					BOTTOM		R-PBGA-B152	3.6 V	1 mm		14 mm		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F1T08CUCCBH8-6R:C	Micron Technology	FLASH	COMMERCIAL	152	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		128GX8	128G					BOTTOM		R-PBGA-B152	3.6 V	1.4 mm		14 mm		1099511627776 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F256G08CECCBH6-6R:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		32GX8	32G					BOTTOM		R-PBGA-B152	3.6 V	1 mm		14 mm		274877906944 bit	2.7 V						MLC NAND TYPE		18 mm		3.3
MT29F256G08CEECBH6-12:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		32GX8	32G					BOTTOM		R-PBGA-B152	3.6 V	1 mm		14 mm		274877906944 bit	2.7 V						MLC NAND TYPE		18 mm		3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.