INDUSTRIAL Flash Memory 964

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F400B3SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		80 ns	3	NO
MT28F400B3WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
PC28F256P33BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC28F256P33BFR	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
PC48F4400P0TB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1	30	260			13 mm		95 ns	3
PC48F4400P0TB0EH	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1					13 mm		95 ns	3
RC28F256P33TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	2.3 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
RC48F4400P0TB0EJ	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1					13 mm		95 ns	3
AT45DCB002	Atmel	FLASH CARD	INDUSTRIAL	7		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			16777216 words	3			1	MICROELECTRONIC ASSEMBLY						85 Cel	16MX1	16M	-40 Cel					UNSPECIFIED		X-XXMA-X7		3.6 V			20 MHz		Not Qualified				16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED						2.7
M29F080D70N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	1MX8	1M	-40 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V			e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DB55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DB70N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DT55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
AT29C040A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	512KX8	512K	-40 Cel	2K	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		225	NOR TYPE	.0003 Amp	13.97 mm		90 ns	5	YES
M58LW032D110N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				33554432 bit	2.7 V		4/8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
M58LW032D110ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	2.7 V		4/8	e0			NOR TYPE	.00004 Amp	13 mm	YES	110 ns	3	NO
MT25QL02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		60 mA	536870912 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel	512MX4	512M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		2147483648 bit	2.7 V	MEMORY WIDTH CAN ALSO ORGANISED AS X1		e1			NOR TYPE	.00005 Amp	8 mm			3
AT29C512-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	64KX8	64K	-40 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			524288 bit	4.75 V		128	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT49BV322AT-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	2.7	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.65 V	TOP/BOTTOM BOOT BLOCK		e0	30	240	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT29C010A-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	128KX8	128K	-40 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.75 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm		70 ns	5	YES
AT29C010A-70PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD		DUAL		R-PDIP-T32		5.25 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.75 V			e0			NOR TYPE	.0003 Amp	42.037 mm		70 ns	5	YES
AT29C010A-70TI	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.25 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.75 V			e0		240	NOR TYPE	.00003 Amp	18.4 mm		70 ns	5	YES
M29F800DB70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
M29F800DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e6		260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DT70M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3/e4	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00015 Amp	28.2 mm	YES	70 ns	5	YES
M29F800DT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e6		260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
AT49BV162A-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.65 V			e0			NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT49F002AT-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	25 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
MT28F128J3FS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F128J3RG-12MET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	120 ns	2.7	NO
MT28F320J3FS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	110 ns	2.7	NO
MT28F640J3FS-115MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	115 ns	2.7	NO
W25Q64BVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		18 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm	Not Qualified		SPI		67108864 bit	2.7 V						NOR TYPE	.000005 Amp	5.28 mm			2.7
MT28F128J3BS-12ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		4/8	e1		260	NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F128J3BS-12MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				134217728 bit	2.7 V		4/8	e1		260	NOR TYPE	.00012 Amp	13 mm	YES	120 ns	2.7	NO
MT28F128J3RP-12ET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e3		260	NOR TYPE	.00012 Amp	18.4 mm	YES	120 ns	2.7	NO
MT28F128J3RP-12MET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e3		260	NOR TYPE	.00012 Amp	18.4 mm	YES	120 ns	2.7	NO
MT28F320J3BS-11ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	2MX16	2M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	2.7 V			e1	30	260			13 mm		110 ns	2.7
MT28F320J3BS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	2.7 V			e1		260			13 mm		110 ns	2.7
MT28F640J3BS-115ET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V			e1	30	260			13 mm		115 ns	2.7
MT28F640J3BS-115MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V			e1		260			13 mm		115 ns	2.7
MT28F800B5WP-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,7	YES	MATTE TIN		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WP-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
CAT28F512HI-90	Catalyst Semiconductor	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	64KX8	64K	-40 Cel		YES	MATTE TIN		DUAL		R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	18.4 mm		90 ns	12	NO
CAT28F512LI-12	Catalyst Semiconductor	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	64KX8	64K	-40 Cel		YES	MATTE TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V			e3			NOR TYPE	.00001 Amp	42.03 mm		120 ns	12	NO
AT45DB041B-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories		1.27 mm	85 Cel	4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm		20 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e3	40	260	NOR TYPE	.00001 Amp	5.29 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.