Infineon Technologies Flash Memory 201

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL256S10GHB010	Infineon Technologies	FLASH	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S10GHB010	Infineon Technologies	FLASH	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10GHB013	Infineon Technologies	FLASH	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29AL016J70TFM020	Infineon Technologies	FLASH	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	20	.5 mm	125 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,31	YES	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm		BOTTOM	16777216 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064N11FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			67108864 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm			10 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			33554432 bit	2.7 V			NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			67108864 bit	1.65 V			NOR TYPE		13 mm		110 ns	3	NO
S25HS02GTFABHV153	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8		1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel				BOTTOM	S-PBGA-B24	3	2 V			166 MHz		SPI		2147483648 bit	1.7 V			NOR TYPE					1.8
S26HL02GTFGBHB043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3		1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel				BOTTOM	S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V			NOR TYPE					3
S26HL02GTFGBHB050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	3		1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel				BOTTOM	S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V			NOR TYPE					3
S26HS02GTFPBHM053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS			2147483648 words	1.8		1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel				BOTTOM	S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V			NOR TYPE					1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.