Infineon Technologies Flash Memory 201

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S26HL02GTFGBHM040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY				125 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V	NOR TYPE			3
S26HL02GTFGBHM043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY				125 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V	NOR TYPE			3
S26HS02GTFPBHB053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S28HS02GTFPBHV053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHV033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				105 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S26HS02GTFPBHM050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				125 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHB033	Infineon Technologies	FLASH	24	BGA		PLASTIC/EPOXY		1	CMOS	AEC-Q100			SYNCHRONOUS		1073741824 words	1.8		GRID ARRAY				105 Cel		1GX1		-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHV030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				105 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHM033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				125 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHM030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				125 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHI033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				85 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S26HS02GTFPBHM043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				125 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S26HS02GTFPBHM040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				125 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHA033	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				85 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHB030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				105 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHI030	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS				SYNCHRONOUS		1073741824 words	1.8	1	GRID ARRAY				85 Cel		1GX1	1G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI	1073741824 bit	1.7 V	NOR TYPE			1.8
S25HS02GTFABHV150	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S26HS02GTFPBHB043	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S26HS02GTFPBHB050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S26HL02GTFGBHB053	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V	NOR TYPE			3
S26HS02GTFPBHB040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S26HL02GTFGBHB040	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words	3	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz			2147483648 bit	2.7 V	NOR TYPE			3
S28HS02GTFPBHV050	Infineon Technologies	FLASH	24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words	1.8	1	GRID ARRAY				105 Cel		2GX1	2G	-40 Cel	BOTTOM		S-PBGA-B24	3	2 V			166 MHz			2147483648 bit	1.7 V	NOR TYPE			1.8
S28HS01GTGZBHA030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	173 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	1.7 V	NOR TYPE	.00016 Amp	8 mm	1.8
S25HS512TDPBHB013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHI013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDSBHV013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFABHV013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V	NOR TYPE	.00034 Amp	8 mm	1.8
S25HL01GTDPMHB010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	105 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHB013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	105 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHI010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	85 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTDPMHI013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	85 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFABHA030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	8 mm	3
S25HL01GTFABHB030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	8 mm	3
S25HL01GTFABHV030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	8 mm	3
S25HL01GTFABHV033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	8 mm	3
S25HL01GTFAMHI013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	85 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHV010	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	105 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL01GTFAMHV013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	105 Cel		128MX8	128M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	2560000 Write/Erase Cycles	166 MHz	7.5 mm	SPI	1073741824 bit	2.7 V	NOR TYPE	.00056 Amp	10.3 mm	3
S25HL512TDPMHV013	Infineon Technologies	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE	SOP16,.4	25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL	HARDWARE	R-PDSO-G16	3	3.6 V	2.65 mm	1280000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	10.3 mm	3
S25HL512TDPNHV013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	105 Cel		64MX8	64M	-40 Cel	DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	133 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFABHI010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFABHM010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	125 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFABHV013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	105 Cel		64MX8	64M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHI013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	85 Cel		64MX8	64M	-40 Cel	DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFANHM013	Infineon Technologies	FLASH	8	HVSON	RECTANGULAR		YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	25	1.27 mm	125 Cel		64MX8	64M	-40 Cel	DUAL	HARDWARE	R-XDSO-N8	3	3.6 V	.8 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V	NOR TYPE	.00034 Amp	8 mm	3
S25HS01GTDPBHA030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	1.7 V	NOR TYPE	.00051 Amp	8 mm	1.8
S25HS01GTFABHA030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	25	1 mm	85 Cel		128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V	NOR TYPE	.00051 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.