Micron Technology Flash Memory 937

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
MTFC64GASAQHD-AIT	Micron Technology	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		64GX8	64G	-40 Cel		NO		BOTTOM		R-PBGA-B153	3.6 V	.9 mm		200 MHz	11.5 mm		549755813888 bit	2.7 V					NAND TYPE		13 mm		NO
MTFC32GASAQHD-AAT	Micron Technology	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			34359738368 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	105 Cel		32GX8	32G	-40 Cel		NO		BOTTOM		R-PBGA-B153	3.6 V	.9 mm		200 MHz	11.5 mm		274877906944 bit	2.7 V					NAND TYPE		13 mm		NO
MTFC64GAZAQHD-WT	Micron Technology	FLASH CARD	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20		1	.5 mm	85 Cel		64GX8	64G	-25 Cel				BOTTOM		R-PBGA-B153	3.6 V	.9 mm			11.5 mm		549755813888 bit	2.7 V					NAND TYPE		13 mm
MT29F1G08ABBEAH4-ITX:E	Micron Technology	FLASH	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm	100000 Write/Erase Cycles		9 mm		1073741824 bit	1.7 V		2K			SLC NAND TYPE	.00005 Amp	11 mm	1.8	YES
MT25QL128ABB1EW7-CSIT	Micron Technology	FLASH	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm	SPI	134217728 bit	2.7 V			30	260	NOR TYPE	.00003 Amp	6 mm	3
MT29F8G08ADADAH4-IT:DTR	Micron Technology	FLASH	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		10	.8 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	8K	YES	YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm	100000 Write/Erase Cycles		9 mm		8589934592 bit	2.7 V		2K			SLC NAND TYPE	.0001 Amp	11 mm	3.3	NO
MT29F8G08AAAWP:ATR	Micron Technology	FLASH	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		10	.5 mm	70 Cel	3-STATE	1GX8	1G	0 Cel	8K	YES	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm		8589934592 bit	2.7 V		2K	30	260	SLC NAND TYPE		18.4 mm	3.3	NO
MT29F256G08CJABAWP:B	Micron Technology	FLASH	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3	NO	8	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20			.5 mm	70 Cel		32GX8	32G	0 Cel		NO	YES	QUAD	HARDWARE	R-PDSO-G48	3.6 V	1.2 mm	3000 Write/Erase Cycles		12 mm		274877906944 bit	2.7 V		8K			MLC NAND TYPE	.00005 Amp	18.4 mm	3.3	NO
MTFC4GLGDQ-AIT	Micron Technology	FLASH	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel		4GX8	4G	-40 Cel		NO		BOTTOM		R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V					MLC NAND TYPE		18 mm		NO
MTFC32GJGDQ-AIT	Micron Technology	FLASH	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO	8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel		32GX8	32G	-40 Cel		NO		BOTTOM		R-PBGA-B100	3.6 V	1.4 mm		52 MHz	14 mm		274877906944 bit	2.7 V					MLC NAND TYPE		18 mm		NO
MTFC32GAZAQDW-AAT	Micron Technology	FLASH CARD	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		32GX8	32G	-40 Cel				BOTTOM		R-PBGA-B100	3.6 V	1.5 mm		200 MHz	14 mm		274877906944 bit	2.7 V					NAND TYPE		18 mm	3.3
MTFC32GAZAQDW-AATTR	Micron Technology	FLASH CARD	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel		32GX8	32G	-40 Cel				BOTTOM		R-PBGA-B100	3.6 V	1.5 mm		200 MHz	14 mm		274877906944 bit	2.7 V					NAND TYPE		18 mm	3.3
MT29F4G01ABAFD12-AUT:F	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	536870912 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	10	1 mm	125 Cel	3-STATE	512MX8	512M	-40 Cel				BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	4294967296 bit	2.7 V	CONFIGURABLE AS 4G X 1				SLC NAND TYPE	.0001 Amp	8 mm	3.3
MT29F4G01ABBFD12-AUT:F	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	536870912 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	10	1 mm	125 Cel	3-STATE	512MX8	512M	-40 Cel				BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm	SPI	4294967296 bit	1.7 V	CONFIGURABLE AS 4G X 1				SLC NAND TYPE	.0001 Amp	8 mm	1.8
MTFDKCC960TFR-1BC1ZABYY	Micron Technology	FLASH MODULE		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words			8	MICROELECTRONIC ASSEMBLY					70 Cel		960GX8	960G	0 Cel				UNSPECIFIED		R-XXMA-X							8246337208320 bit						TLC NAND TYPE
MTSD128AHC6MS-1WTCS	Micron Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			137438953472 words	3.3		8	UNCASED CHIP					85 Cel		128GX8	128G	-25 Cel				UPPER		R-XUUC-N8	3.6 V	1.1 mm		208 MHz	11 mm	SPI	1099511627776 bit	2.7 V					TLC NAND TYPE		15 mm	3.3
MTSD064AHC6MS-1WTCS	Micron Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			68719476736 words	3.3		8	UNCASED CHIP					85 Cel		64GX8	64G	-25 Cel				UPPER		R-XUUC-N8	3.6 V	1.1 mm		208 MHz	11 mm	SPI	549755813888 bit	2.7 V					TLC NAND TYPE		15 mm	3.3
MTSD032AHC6MS-1WTCS	Micron Technology	FLASH CARD	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words	3.3		8	UNCASED CHIP					85 Cel		32GX8	32G	-25 Cel				UPPER		R-XUUC-N8	3.6 V	1.1 mm		208 MHz	11 mm	SPI	274877906944 bit	2.7 V					TLC NAND TYPE		15 mm	3.3
MT29F2G01ABAGDSF-IT:G	Micron Technology	FLASH	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3		8	SMALL OUTLINE	SOP16,.4		10	1.27 mm	85 Cel		256MX8	256M	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	SPI	2147483648 bit	2.7 V					SLC NAND TYPE	.00005 Amp	10.3 mm	3.3
MT29F2G01ABAGD12-IT:G	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	268435456 words	3.3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel		256MX8	256M	-40 Cel				BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	2147483648 bit	2.7 V					SLC NAND TYPE	.00005 Amp	8 mm	3.3
MTFC4GMXEA-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	4294967296 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm		52 MHz	11.5 mm		34359738368 bit	1.65 V					NAND TYPE		13 mm	1.8
MTFC32GLXDM-WT	Micron Technology	Embedded MMC	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	34359738368 words	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	32GX8	32G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	1.2 mm		52 MHz	11.5 mm		274877906944 bit	1.65 V					NAND TYPE		13 mm	1.8
MTFC8GLXEA-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	8589934592 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm		52 MHz	11.5 mm		68719476736 bit	1.65 V					NAND TYPE		13 mm	1.8
MTFC2GMXEA-WT	Micron Technology	Embedded MMC	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		70 mA	2147483648 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	2GX8	2G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B153	1.95 V	.8 mm		52 MHz	11.5 mm		17179869184 bit	1.65 V					NAND TYPE		13 mm	1.8
MTFC16GLXDV-WT	Micron Technology	Embedded MMC	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		80 mA	17179869184 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20			.5 mm	85 Cel	OPEN-DRAIN	16GX8	16G	-25 Cel				BOTTOM	HARDWARE	R-PBGA-B169	1.95 V	1 mm		52 MHz	12 mm		137438953472 bit	1.65 V					NAND TYPE		16 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.