Micron Technology Flash Memory 937

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F1G16ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		64MX16	64M	0 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm				1073741824 bit	1.7 V						SLC NAND TYPE		13 mm			1.8
MT25TL256HBA8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MTFC16GAKAENA-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3	3.6 V	1.2 mm			14 mm				137438953472 bit	2.7 V			e1	30	260			18 mm			2.7
MT29F4G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			4294967296 bit	1.7 V		2K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F4G08ABADAH4-AITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				4294967296 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MTFC16GKQDI-IT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B169		3.6 V	1.2 mm		52 MHz	12 mm				137438953472 bit	2.7 V	IT ALSO REQUIRES 1.65V TO 1.95V, MMC DEVICE			30	260	MLC NAND TYPE		16 mm			3
MT29F128G08CBCCBH6-6R:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1 mm			14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F128G08CBECBH6-12:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1 mm			14 mm				137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F1T08CUCCBH8-6R:C	Micron Technology	FLASH	COMMERCIAL	152	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	70 Cel		128GX8	128G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1.4 mm			14 mm				1099511627776 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F256G08CECCBH6-6R:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1 mm			14 mm				274877906944 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F256G08CEECBH6-12:C	Micron Technology	FLASH	COMMERCIAL	152	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1 mm			14 mm				274877906944 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F512G08CKCCBH7-6R:C	Micron Technology	FLASH	COMMERCIAL	152	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		64GX8	64G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1.2 mm			14 mm				549755813888 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F512G08CKECBH7-12:C	Micron Technology	FLASH	COMMERCIAL	152	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		64GX8	64G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1.2 mm			14 mm				549755813888 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MTFDDAT128MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			137438953472 words				8	MICROELECTRONIC ASSEMBLY						85 Cel		128GX8	128G	-40 Cel					SINGLE		R-XSMA-N										1099511627776 bit							TLC NAND TYPE
MTFDDAT256MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY						85 Cel		256GX8	256G	-40 Cel					SINGLE		R-XSMA-N										2199023255552 bit							TLC NAND TYPE
MT29F1G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K	e1			SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F1G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT25QU128ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm				134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
MT29F2G16ABAEAWP-AAT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		128MX16	128M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				2147483648 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
M29W320DB80ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm		80 ns	3
NAND512R3A2SZAXE	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	64094208 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm	Not Qualified			512753664 bit	1.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
NAND512W3A2SNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			512753664 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	3	NO
NAND512W3A2SZAXE	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1.05 mm			9 mm	Not Qualified			512753664 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm		35 ns	3	NO
NAND512R3A2SZA6F	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	15 mA	64094208 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1.05 mm			9 mm	Not Qualified			512753664 bit	1.7 V		512				SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
NAND256W3A2BZAXE	Micron Technology	FLASH	INDUSTRIAL	55	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA55,8X12,32		Flash Memories		.8 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B55		3.6 V	1.05 mm			8 mm	Not Qualified			268435456 bit	2.7 V		512				SLC NAND TYPE	.00005 Amp	10 mm		45 ns	3	NO
NAND512R3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			64094208 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX8	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm				512753664 bit	1.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			1.8
NAND512R3A2SN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			64094208 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX8	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm				512753664 bit	1.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			1.8
M25P16-VMF3PB	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified	SPI		16777216 bit	2.7 V						NOR TYPE	.0001 Amp	10.3 mm			3
MT29F4G16ABADAH4-AIT:D	Micron Technology	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY						85 Cel		256MX16	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63										4294967296 bit				e1	30	260	SLC NAND TYPE					3.3
M29W640GT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		70 ns	3
MT25TL512HBA8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
MT29F4G08ABADAWP-AATX:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		512MX8	512M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				4294967296 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
PC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm	Not Qualified		BOTTOM	134217728 bit	2.3 V		8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC32GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32GX8	32G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				274877906944 bit	2.7 V			e1	30	260			13 mm			2.7
MT29F256G08CMCBBH2-10:B	Micron Technology	FLASH																																	TIN SILVER COPPER																		e1	30	260	MLC NAND TYPE					3.3
MTFC8GAMALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				68719476736 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
MTFC4GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDM-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm			2.7
MTFC4GMWDQ-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18 mm			2.7
MTFC4GLMDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm				34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm			2.7
MTFC8GLWDQ-3LAITZ	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		8GX8	8G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V			e1	30	260			18 mm			2.7
MT29F64G08CFACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F32G08CBACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F32G08CBACAWP-Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT29F64G08CFACBWP-12Z:C	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18.4 mm			3.3
MT35XL01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm				1073741824 bit	2.7 V			e1	30	260			8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.