Micron Technology Flash Memory 937

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC64GAJAEDQ-AAT	Micron Technology	FLASH CARD																																	GOLD OVER NICKEL																e4	30	260						2.7
MTFC4GLGDQ-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm			34359738368 bit	2.7 V			e1					18 mm			2.7
MT29F16G08ABABAWP-AIT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm			17179869184 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm			3.3	NO
MT29F16G08ABCBBH1-12AIT:B	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	YES		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			10	1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B100		3.6 V	1 mm	100000 Write/Erase Cycles		12 mm			17179869184 bit	2.7 V	83MHZ CLOCK FREQUENCY IS AVAILABLE	4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm			3.3	NO
MT29F64G08CBABBWP-12IT:B	Micron Technology	FLASH																																	TIN																e3	30	260	MLC NAND TYPE					3.3
MT29F1G08ABAFAH4-ITE:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm			9 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			3.3
MT29F1G08ABAFAWP-ITE:F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MTFC8GLWDM-3LAATZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	105 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel				YES	BOTTOM	R-PBGA-B153		3.6 V	1.2 mm			11.5 mm			68719476736 bit	2.7 V								13 mm
MTFC8GLWDQ-3LAATZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm			68719476736 bit	2.7 V						NAND TYPE		18 mm
MTFC4GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm			34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFC8GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm			68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
JS28F00AP30EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Matte Tin (Sn)		DUAL	R-PDSO-G56		2 V	1.2 mm			14 mm	Not Qualified		1073741824 bit	1.7 V	SYMMETRICAL BLOCKS	16	e3	30	260	NOR TYPE	.00024 Amp	18.4 mm	YES	110 ns	1.8	NO
JS28F512P30EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	Matte Tin (Sn)		DUAL	R-PDSO-G56		2 V	1.2 mm			14 mm	Not Qualified		536870912 bit	1.7 V	SYMMETRICAL BLOCKS	16	e3	30	260	NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	1.8	NO
JS28F512P30TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	Matte Tin (Sn)		DUAL	R-PDSO-G56		2 V	1.2 mm			14 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT	16	e3	30	260	NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	1.8	NO
PC28F512P30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
PC28F512P30TFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	1.8	NO
MT29F1G08ABADAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified		1073741824 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	3.3	NO
MT29F1G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F1G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F1G16ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G16ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F1G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F2G01AAAEDH4-ITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm			2.7
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MT29F1G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm			9 mm			1073741824 bit	2.7 V						SLC NAND TYPE		11 mm			2.7
MT29F1G16ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G01AAAEDH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm			2.7
MTFC4GMDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm			137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
MTFC32GJDED-3MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		32GX8	32G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1 mm		52 MHz	14 mm			274877906944 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
MTFC64GJDDN-3MWT	Micron Technology	FLASH CARD	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3	NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		64GX8	64G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B169		3.6 V	1.4 mm		52 MHz	14 mm			549755813888 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM	R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3.3	NO
MT29F1G08ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT29F2G08ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		2147483648 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT28EW01GABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		105 ns	3
MT28EW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		105 ns	3
MT28EW01GABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		105 ns	3
MT28EW01GABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			1073741824 bit	2.7 V						NOR TYPE		13 mm		105 ns	3
MT28EW512ABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		105 ns	3
MT28EW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28EW512ABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		105 ns	3
MT28EW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28FW512ABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		105 ns	3
MT28FW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm			11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28FW512ABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		105 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.