Micron Technology Flash Memory 937

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q512A83G1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V						NOR TYPE		8 mm			3
M29W256GSH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W256GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W256GSL70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm				268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
N25Q064A13ESF42G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm				67108864 bit	2.7 V						NOR TYPE		10.3 mm			2.7
M25P16-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
M25P16-VMN6YPBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
MT28GU256AAA2EGC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64	2 V	1.2 mm		133 MHz	8 mm				268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			10 mm			1.8
MT28GU512AAA2EGC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64	2 V	1.2 mm		133 MHz	8 mm				536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			10 mm			1.8
N25Q512A81GSF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel					DUAL		R-PDSO-G16	2 V	2.65 mm		108 MHz	7.5 mm				536870912 bit	1.7 V						NOR TYPE		10.3 mm			1.8
MT28F008B3VG-9B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F008B3VG-9T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F008B3VG-9BET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3SG-9BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
MT28F800B3SG-9B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
MT28F800B3SG-9TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
MT28F800B3SG-9T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
MT28F800B3WG-9BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WG-9B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WG-9TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WG-9T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F004B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	100000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
PC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
MT28F008B5VG-8BET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B5VG-8TET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B5VG-8T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F800B5SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F800B5SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F800B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5SG-8BET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0	30	235	NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5SG-8B	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5SG-8TET	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5SG-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G44	5.5 V	2.7 mm			12.6 mm	Not Qualified		TOP	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.195 mm		80 ns	5	NO
MT28F400B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	4194304 bit	4.5 V	INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK		e0	30	235	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT29F2G16ABBEAH4:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F2G16ABBEAH4:ETR	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX16	128M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F1G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	HARDWARE	R-PBGA-B63	1.95 V	1 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm			1.8	NO
M29W512GH70N3E	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		80 ns	2.7
MT28F004B5VG-8BET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F004B5VG-8TET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.