Micron Technology Flash Memory 937

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F800B5WP-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,7	YES	MATTE TIN		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MT28F800B5WP-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	MATTE TIN		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MT28F800B5WP-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	MATTE TIN		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MT28F004B5VP-8T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,3	YES	MATTE TIN		DUAL		R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MT28F400B5SP-8T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN SILVER COPPER		DUAL		R-PDSO-G44	5.5 V	2.7 mm		12.6 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e1		260	NOR TYPE	.000005 Amp	28.195 mm	80 ns	5	NO
MT28F400B5WP-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	MATTE TIN		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MT28F400B5WP-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MT28F400B5WP-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	MATTE TIN		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
MTFDCAE002SAJ-1M1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED										MICROELECTRONIC ASSEMBLY													UNSPECIFIED		R-XXMA-X					Not Qualified							30	260					5
MTFDCAE004SAJ-1N1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED										MICROELECTRONIC ASSEMBLY													UNSPECIFIED		R-XXMA-X					Not Qualified							30	260					5
MTFDCAE008SAJ-1N1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED										MICROELECTRONIC ASSEMBLY											TIN SILVER COPPER		UNSPECIFIED		R-XXMA-X					Not Qualified						e1							5
MT29F2G08AACWP:CTR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	256MX8	256M	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm		3
MT29F4G08BABWPET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		2K	e3			SLC NAND TYPE	.0001 Amp	18.4 mm	18 ns	2.7	NO
MTFC128GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		14 mm			1099511627776 bit	2.7 V			e1	30	260			18 mm		2.7
MTFC128GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		14 mm			1099511627776 bit	2.7 V			e1	30	260			18 mm		2.7
MTFC128GAPALNS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	105 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm		11.5 mm			1099511627776 bit	2.7 V			e1	30	260			13 mm		2.7
MTFC128GAPALNS-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm		11.5 mm			1099511627776 bit	2.7 V			e1	30	260			13 mm		2.7
MTFC16GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		14 mm			137438953472 bit	2.7 V			e1	30	260			18 mm		2.7
MTFC16GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		14 mm			137438953472 bit	2.7 V			e1	30	260			18 mm		2.7
MTFC32GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	105 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm		11.5 mm			274877906944 bit	2.7 V			e1	30	260			13 mm		2.7
MTFC32GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm		11.5 mm			274877906944 bit	2.7 V			e1	30	260			13 mm		2.7
MTFC32GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40			1 mm	105 Cel	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm	200 MHz	14 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm		2.7	NO
MTFC32GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40			1 mm	85 Cel	32GX8	32G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm	200 MHz	14 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		18 mm		2.7	NO
MTFC64GAPALBH-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	105 Cel	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm		11.5 mm			549755813888 bit	2.7 V				30	260			13 mm		2.7
MTFC64GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm		11.5 mm			549755813888 bit	2.7 V			e1	30	260			13 mm		2.7
MTFC64GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel	64GX8	64G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		14 mm			549755813888 bit	2.7 V			e1	30	260			18 mm		2.7
MTFC64GAPALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words		NO		8	GRID ARRAY, THIN PROFILE	BGA100,10X15,40			1 mm	85 Cel	64GX8	64G	-40 Cel		NO	TIN SILVER COPPER	YES	BOTTOM	HARDWARE	R-PBGA-B100	3.6 V	1.2 mm	200 MHz	14 mm			549755813888 bit	2.7 V			e1	30	260	NAND TYPE		18 mm		2.7	NO
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	95 Cel	64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.461 mm	52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GAMALNA-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE				1 mm	85 Cel	8GX8	8G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		14 mm			68719476736 bit	2.7 V			e1	30	260			18 mm		2.7
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm			137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC16GLWDM-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			137438953742 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC16GLWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20			.5 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B169	3.6 V	1.364 mm	52 MHz	14 mm			274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GJWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC4GLGDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.374 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC4GMWDM-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V						NAND TYPE		13 mm
MTFC4GMWDQ-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			34359738368 bit	2.7 V						NAND TYPE		18 mm
MTFC8GLGDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.374 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDM-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDM-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	153	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.364 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC8GLWDQ-3MAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			68719476736 bit	2.7 V						NAND TYPE		18 mm
MTFC8GLWDQ-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GJWDQ-4LAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.4 mm	52 MHz	14 mm			274877906944 bit	2.7 V						NAND TYPE		18 mm
MTFC4GLMDQ-AITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	4GX8	4G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		18 mm
MTFC8GLWDQ-3LAATA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	105 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm	52 MHz	14 mm			68719476736 bit	2.7 V						NAND TYPE		18 mm
MTFC8GLWDQ-3LAITA	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40			1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.4 mm	52 MHz	14 mm			68719476736 bit	2.7 V						NAND TYPE		18 mm
MTFDDAV1T0TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY						1TX8	1T						UNSPECIFIED		R-XXMA-X							8796093022208 bit							TLC NAND TYPE
MTFDDAV256TDL-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words				8	MICROELECTRONIC ASSEMBLY						256GX8	256G						UNSPECIFIED		R-XXMA-X							2199023255552 bit							TLC NAND TYPE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.