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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT25QU01GBBB8E12-0AUTTR	Micron Technology	FLASH																															TIN SILVER COPPER																e1	30	260						1.8
MT25QU02GCBB8E12-0AUTTR	Micron Technology	FLASH																															TIN SILVER COPPER																e1	30	260						1.8
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm			1.8
MT25QU256ABA8ESF-0AATTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	33554432 words	1.8		8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	105 Cel		32MX8	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.65 mm	100000 Write/Erase Cycles	166 MHz	7.5 mm		SPI	268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	10.3 mm			1.8
MT28EW256ABA1HPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8	20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B56	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm	.00006 ms		268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
MT28EW256ABA1LPN-0SITTR	Micron Technology	FLASH		56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	YES	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	8	20	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	256	YES		YES	BOTTOM		R-PBGA-B56	3.6 V	1 mm	100000 Write/Erase Cycles		7 mm	.00006 ms		268435456 bit	2.7 V		16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	9 mm	YES	70 ns	3	YES
MT29F1G01AAADDH4-ITX:DTR	Micron Technology	FLASH																															Tin/Silver/Copper (Sn/Ag/Cu)																e1	30	260						2.7
MT35XL01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL01GBBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	1073741824 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL02GCBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	2147483648 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL256ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	268435456 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XL512ABA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XU01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU01GBBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU256ABA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA2G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU512ABA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
IS25WP512M-RHLE-TR	Integrated Silicon Solution	FLASH																																																NOT SPECIFIED	NOT SPECIFIED						1.8
MT25QL02GCBB8E12-0AATTR	Micron Technology	FLASH																															TIN SILVER COPPER																e1	30	260						3
MTFC32GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	3-STATE	32GX8	32G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153	3.6 V	1.1 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
IS22TF32G-JCLA2	Integrated Silicon Solution	FLASH		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		55 mA	34359738368 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	105 Cel	3-STATE	32GX8	32G	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B153	3.6 V	1 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	TLC NAND TYPE	.00003 Amp	13 mm			3.3
IS25WP512M-RMLA3-TR	Integrated Silicon Solution	FLASH																																																							1.8
MT29F8G08ABABAWP-ITX:B	Micron Technology	FLASH	INDUSTRIAL	48		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS			1073741824 words	3.3	NO	8						85 Cel		1GX8	1G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48								8589934592 bit				e3			SLC NAND TYPE						NO
MTFC8GAKAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-25 Cel		NO			BOTTOM		R-PBGA-B153	3.6 V	1 mm			11.5 mm			68719476736 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		13 mm				NO
MTFC4GACAJCN-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			.5 mm	85 Cel	OPEN-DRAIN	4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1 mm			11.5 mm			34359738368 bit	2.7 V	ALSO AVAILABE WITH TAPE AND REEL			30	260	MLC NAND TYPE		13 mm				NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.