Flash Memory

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F1G08ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G08ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G16ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G16ABBDAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	11 mm	25 ns	1.8	NO
MT29F1G16ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT29F1G16ABBDAHC:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
IS25LQ010B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		1MX1	1M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm			1048576 bit	2.3 V			e3	30	260			4.9 mm		3
IS25LQ020B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		2MX1	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm			2097152 bit	2.3 V								5.28 mm		3
IS25LQ025B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm			262144 bit	2.3 V			e3	30	260			4.9 mm		3
IS25LQ040B-JKLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	105 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	5 mm			4194304 bit	2.3 V								6 mm		3
IS25LQ040B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		4MX1	4M	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm			4194304 bit	2.3 V			e3	30	260			4.9 mm		3
MT29F2G01AAAEDH4-ITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm		2.7
W29N01GVSIAA	Winbond Electronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V						SLC NAND TYPE		18.4 mm		3.3
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		1.8
MT29F1G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V	1 mm			9 mm			1073741824 bit	2.7 V						SLC NAND TYPE		11 mm		2.7
MT29F1G16ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V						SLC NAND TYPE		11 mm		1.8
MT29F2G01AAAEDH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm			2147483648 bit	2.7 V			e1			SLC NAND TYPE		11 mm		2.7
MTFC4GMDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm		3.3	NO
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm			137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3.3	NO
MTFC32GJDED-3MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		32GX8	32G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B169		3.6 V	1 mm		52 MHz	14 mm			274877906944 bit	2.7 V						MLC NAND TYPE		18 mm		3.3	NO
MTFC4GLDEA-0MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			34359738368 bit	2.7 V						MLC NAND TYPE		13 mm		3.3	NO
MTFC64GJDDN-3MWT	Micron Technology	FLASH CARD	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3	NO		8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		64GX8	64G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B169		3.6 V	1.4 mm		52 MHz	14 mm			549755813888 bit	2.7 V						MLC NAND TYPE		18 mm		3.3	NO
MTFC8GLDEA-1MWT	Micron Technology	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel		NO	TIN SILVER COPPER NICKEL		BOTTOM			R-PBGA-B153		3.6 V	.8 mm		52 MHz	11.5 mm			68719476736 bit	2.7 V						MLC NAND TYPE		13 mm		3.3	NO
MX25L25645GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	120 MHz	5.23 mm		SPI	268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	5.28 mm		3
MX25L25645GZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	120 MHz	6 mm		SPI	268435456 bit	2.7 V			e3			NOR TYPE	.00002 Amp	8 mm		3
MX25L6433FMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	16777216 words	3			4	SMALL OUTLINE	SOP16,.4	2		20	1.27 mm	85 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm		SPI	67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e3	40	260	NOR TYPE	.00002 Amp	10.3 mm		3
MX25L6433FXCI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		17 mA	16777216 words	3			4	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	2		20	1 mm	85 Cel		16MX4	16M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e1	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm		3
SST39SF010A-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES			DUAL	1		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm	70 ns	5	YES
MT29F1G08ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B63		1.95 V	1 mm			9 mm			1073741824 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm		1.8
IS25LP064A-JMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm		SPI	67108864 bit	2.3 V			e3	10	260	NOR TYPE	.000035 Amp	10.3 mm		3
MX25R6435FBDIL0	Macronix	FLASH	INDUSTRIAL	22	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2			.4 mm	85 Cel		16MX4	16M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B22	3	3.6 V	.52 mm		33 MHz				67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e1							3
MX25R8035FBDIL0	Macronix	FLASH	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2097152 words	1.8			4	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		2				85 Cel		2MX4	2M	-40 Cel					BOTTOM			R-PBGA-B8		3.6 V	.52 mm		104 MHz				8388608 bit	1.65 V	IT IS ALSO CONFIGURED AS 8M X 1			NOT SPECIFIED	NOT SPECIFIED					1.8
MX60LF8G18AC-TI	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		1GX8	1G	-40 Cel			TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm			8589934592 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm		3
W25Q80EWZPIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	8388608 words	1.8		1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified	SPI	8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	6 mm		1.8
W25Q64JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm		3.3
W25Q64JVZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	1		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm		SPI	67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	6 mm		3.3
MT29F2G08ABBEAHC:E	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	BOTTOM			R-PBGA-B63		1.95 V	1 mm			10.5 mm	Not Qualified		2147483648 bit	1.7 V		2K				SLC NAND TYPE	.00005 Amp	13 mm	25 ns	1.8	NO
MT28EW01GABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm	105 ns	3
MT28EW01GABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm	105 ns	3
MT28EW01GABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		64MX16	64M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm			1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm	105 ns	3
MT28EW01GABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm			1073741824 bit	2.7 V						NOR TYPE		13 mm	105 ns	3
MT28EW512ABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28EW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28EW512ABA1LJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28EW512ABA1LPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3
MT28FW512ABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm	105 ns	3
MT28FW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM			R-PBGA-B64		3.6 V	1.4 mm			11 mm			536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm	105 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.