8 Other Function Memory ICs 71

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
MR20H40CDFR	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS	46.5 mA	524288 words		3.3	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	SRAMs		1.27 mm	85 Cel		512KX8	512K	-40 Cel			DUAL		R-PDSO-N8	3	3.6 V	.9 mm			5 mm	Not Qualified		4194304 bit	3 V				.00075 Amp	6 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G8		3.6 V	1.75 mm			3.9 mm	Not Qualified		262144 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	5.05 mm
XC17S05PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		53984 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		53984 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		54544 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95008 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95008 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95752 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S10XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		95752 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		178144 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		178144 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		179160 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S20XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		179160 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		247968 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		247968 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		249168 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		329312 bit	4.75 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		329312 bit	4.5 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		330696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S40XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		330696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		53984 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		53984 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		54544 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S05XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		54544 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95008 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95008 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S10XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	178144X1	178144	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		178144 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		178144 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		179160 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S20XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		179160 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		247968 bit	4.75 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		247968 bit	4.5 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		249168 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		249168 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD		SYNCHRONOUS		32768 words		3.3	3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs		1.27 mm	125 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-N8		3.6 V	1.05 mm			5 mm	Not Qualified		262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	6 mm
XC17S150XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD		DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified		1040128 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
SRTAG2K-DMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		256 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-N8			.6 mm			2 mm			2048 bit						3 mm
STTS424BDN3F	STMicroelectronics	MEMORY CIRCUIT		8		RECTANGULAR	PLASTIC/EPOXY	YES				NO LEAD									SMALL OUTLINE										NICKEL PALLADIUM GOLD		DUAL		R-PDSO-N8	1						Not Qualified				e4	30	260
AT88SC0104C-SU	Atmel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		3.3	3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX1	1K	-40 Cel	MATTE TIN	1011CCCC	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified	I2C	1024 bit	2.7 V	e3			.0001 Amp	4.925 mm
XC17S10VOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	70 Cel	3-STATE	95008X1	95008	0 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95008 bit	4.75 V	e3	30	260	.00005 Amp	4.9 mm
XC17S10XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		95752 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S20XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		179160 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
XC17S30XLVOG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified		249168 bit	3 V	e3	30	260	.00005 Amp	4.9 mm
DLPR100DWC	Texas Instruments	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES				GULL WING				2097152 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel		2MX8	2M	-40 Cel			DUAL		R-PDSO-G8	3						Not Qualified		16777216 bit			30	260	.00005 Amp

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.