8 Other Function Memory ICs 71

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
XC17S10XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	95752 words	COMMON	3.3		3.3	1	IN-LINE	TSOP8,.25	OTP ROMs	2.54 mm	70 Cel	3-STATE	95752X1	95752	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
XC17S30XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	249168 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	249168X1	249168	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
XC17S40XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS	5 mA	330696 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	330696X1	330696	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	330696 bit	3 V	e3	30	250	.00005 Amp	9.3599 mm
ST25TA02KD-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		256X8	256	-40 Cel		DUAL		R-PDSO-N8			.6 mm		2 mm		2048 bit			NOT SPECIFIED	NOT SPECIFIED		3 mm
ST25TA02KP-C6C5	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		256 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		256X8	256	-40 Cel		DUAL		R-PDSO-N8			.6 mm		2 mm		2048 bit			NOT SPECIFIED	NOT SPECIFIED		3 mm
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260		4.9 mm	400 ns
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V	e3	40	260		4.4 mm	400 ns
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V	e3	40	260		4.4 mm	400 ns
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V	e3	40	260		4.9 mm	400 ns
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V	e3	40	260		4.4 mm	400 ns
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2048 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V	e3	40	260		4.9 mm	400 ns
47L04T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		4096 bit	2.7 V	e3	40	260		4.4 mm	400 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	IN-LINE	DIP8,.3		2.54 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm		7.62 mm		16384 bit	2.7 V	e3				9.271 mm	400 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V	e3	40	260		4.9 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260		4.4 mm	400 ns
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V	e3	40	260		4.4 mm	400 ns
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		2.9 mm		65536 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE			1.27 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		3.3			8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.73 mm		5.3 mm		4194304 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED		5.85 mm
MR45V200BRAZAARL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		262144 words		3.3			8	IN-LINE			2.54 mm	85 Cel		256KX8	256K	-40 Cel		DUAL		R-PDIP-T8		3.6 V			7.62 mm		2097152 bit	2.7 V					9.2 mm
MR44V100AMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		131072 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm		3.9 mm		1048576 bit	1.8 V					4.9 mm
MR45V032AMAZBATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		4096 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm		3.9 mm		32768 bit	2.7 V					4.9 mm
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		8192 words		3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		65536 bit	2.7 V					4.9 mm	550 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.