STANDARD SRAM SRAM 264

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TMS62828L-85NW

Texas Instruments

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.00005 Amp

85 ns

UPD44645092AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

8388608 words

SEPARATE

1.5/1.8,1.8

9

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

8MX9

8M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

250 MHz

Not Qualified

75497472 bit

.45 ns

UPD44645362AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

740 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

250 MHz

Not Qualified

75497472 bit

.45 ns

UPD44645362AF5-E50-FQ1-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

650 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

200 MHz

Not Qualified

75497472 bit

.45 ns

UPD44645094AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

470 mA

8388608 words

SEPARATE

1.5/1.8,1.8

9

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

8MX9

8M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

250 MHz

Not Qualified

75497472 bit

.35 Amp

.45 ns

UPD44645364AF5-E40-FQ1-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

580 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

250 MHz

Not Qualified

75497472 bit

.45 ns

UPD44645364AF5-E50-FQ1-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

510 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

1.7 V

0 Cel

BOTTOM

R-PBGA-B165

200 MHz

Not Qualified

75497472 bit

.45 ns

IS62C5128BL-45QLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

Not Qualified

4194304 bit

e3

30

260

.000015 Amp

45 ns

IS61WV20488BLL-10TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

2097152 words

COMMON

2.5/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

2MX8

2M

1.2 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

.025 Amp

10 ns

CY7C1021BNL-15ZSXAT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.0005 Amp

15 ns

IS61LV25616AL-10BI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

100 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.015 Amp

10 ns

IS61LV25616AL-10BLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

100 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.015 Amp

10 ns

CY7C1520KV18-250BZIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

530 mA

2097152 words

COMMON

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

250 MHz

Not Qualified

75497472 bit

.45 ns

CY62147EV30LL-45B2XAT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

2.5/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.000007 Amp

45 ns

IS61WV102416BLL-10MLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

95 mA

1048576 words

COMMON

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

1MX16

1M

2.4 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

9 mm

16777216 bit

2.4 V

e1

10

260

YES

.025 Amp

11 mm

10 ns

IS61WV25616BLS-25TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

262144 words

COMMON

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.009 Amp

25 ns

R1Q3A7236ABB-33IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

850 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

300 MHz

Not Qualified

75497472 bit

.45 ns

R1Q3A7218ABB-33IA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

820 mA

4194304 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

300 MHz

Not Qualified

75497472 bit

.45 ns

R1QEA7218ABG-19IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1030 mA

4194304 words

COMMON

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

533 MHz

Not Qualified

75497472 bit

.87 Amp

.45 ns

R1QDA3636CBB-19IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1280 mA

1048576 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

1MX36

1M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

533 MHz

Not Qualified

37748736 bit

.91 Amp

.45 ns

R1QHA7236ABG-25IA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

910 mA

2097152 words

COMMON

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

400 MHz

Not Qualified

75497472 bit

.79 Amp

.55 ns

R1QHA7236ABG-25IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

910 mA

2097152 words

COMMON

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

400 MHz

Not Qualified

75497472 bit

.79 Amp

.55 ns

R1Q4A7236ABG-33IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

760 mA

2097152 words

COMMON

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

300 MHz

Not Qualified

75497472 bit

.45 ns

R1Q4A7236ABG-40IA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

680 mA

2097152 words

COMMON

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

250 MHz

Not Qualified

75497472 bit

.45 ns

R1Q2A7218ABB-40IA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

890 mA

4194304 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

250 MHz

Not Qualified

75497472 bit

.45 ns

R1QDA3618CBG-20IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1160 mA

2097152 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX18

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

500 MHz

Not Qualified

37748736 bit

.83 Amp

.45 ns

R1QDA3618CBG-19IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1220 mA

2097152 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX18

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

533 MHz

Not Qualified

37748736 bit

.87 Amp

.45 ns

R1QAA7236ABB-20IA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1220 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

500 MHz

Not Qualified

75497472 bit

.87 Amp

.45 ns

R1QAA7218ABB-20IA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1160 mA

4194304 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

500 MHz

Not Qualified

75497472 bit

.83 Amp

.45 ns

R1QDA7236ABB-19IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1280 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

533 MHz

Not Qualified

75497472 bit

.91 Amp

.45 ns

R1QDA7218ABB-20IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1160 mA

4194304 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

500 MHz

Not Qualified

75497472 bit

.83 Amp

.45 ns

R1QDA7236ABG-22IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1130 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

450 MHz

Not Qualified

75497472 bit

.81 Amp

.45 ns

R1QDA7236ABG-19IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1280 mA

2097152 words

SEPARATE

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

533 MHz

Not Qualified

75497472 bit

.91 Amp

.45 ns

R1QDA7218ABG-20IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1160 mA

4194304 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

500 MHz

Not Qualified

75497472 bit

.83 Amp

.45 ns

R1QDA7218ABG-19IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

1220 mA

4194304 words

SEPARATE

1.5/1.8,1.8

18

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

4MX18

4M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

533 MHz

Not Qualified

75497472 bit

.87 Amp

.45 ns

R1Q2A7209ABG-40IB0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

760 mA

8388608 words

SEPARATE

1.5/1.8,1.8

9

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

8MX9

8M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

3

250 MHz

Not Qualified

75497472 bit

.45 ns

AS6C4008-55STINTR

Alliance Memory

STANDARD SRAM

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

COMMON

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.56,20

SRAMs

.5 mm

85 Cel

3-STATE

512KX8

512K

1.5 V

-40 Cel

DUAL

R-PDSO-G32

3

Not Qualified

4194304 bit

.00003 Amp

55 ns

AS6C4008-55ZINTR

Alliance Memory

STANDARD SRAM

INDUSTRIAL

32

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

COMMON

3/5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

1.5 V

-40 Cel

TIN

DUAL

R-PDSO-G32

3

Not Qualified

4194304 bit

e3

.00003 Amp

55 ns

CY7C1041CV33-8ZSXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

256KX16

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.63 V

1.194 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

e4

20

260

18.415 mm

8 ns

CY62177ESL-55ZXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

2.5/3.3,5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

2MX16

2M

1.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.2 V

ALSO OPERATES AT 5V SUPPLY

e3

20

260

.000017 Amp

18.4 mm

55 ns

SMV512K32HFG

Texas Instruments

STANDARD SRAM

MILITARY

76

GQFF

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535V;38534K;883S

FLAT

PARALLEL

ASYNCHRONOUS

635 mA

524288 words

COMMON

1.8

1.8

32

FLATPACK, GUARD RING

TPAK76,2SQ,25

SRAMs

.64 mm

125 Cel

3-STATE

512KX32

512K

1.7 V

-55 Cel

GOLD

QUAD

1

R-CQFP-F76

3.6 V

2.67 mm

22 MHz

20.46 mm

Not Qualified

16777216 bit

3 V

e4

YES

.00033 Amp

25.31 mm

20 ns

CY7C1021BN-15VXET

Cypress Semiconductor

STANDARD SRAM

AUTOMOTIVE

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

125 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J44

3

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

.015 Amp

28.575 mm

15 ns

CY7C1021BN-15ZSXET

Cypress Semiconductor

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.015 Amp

18.415 mm

15 ns

CY7C1041DV33-10BVIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

90 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

8 mm

10 ns

CY7C1041DV33-10BVJXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

90 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

3 V

e1

20

260

.01 Amp

8 mm

10 ns

CY7C1049D-10VXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

2 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-J36

3

5.5 V

3.7592 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e4

40

260

.01 Amp

23.495 mm

10 ns

CY7C1061DV33-10BVXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

175 mA

1048576 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

8 mm

Not Qualified

16777216 bit

3 V

e1

40

260

.025 Amp

9.5 mm

10 ns

CY7C1061DV33-10ZSXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

175 mA

1048576 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

1MX16

1M

2 V

-40 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

e3

20

260

.025 Amp

22.415 mm

10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.