| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
40 |
260 |
36.322 mm |
70 ns |
|||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
20 |
260 |
17.9324 mm |
70 ns |
|||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
20 |
260 |
17.9324 mm |
70 ns |
|||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
55 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.75 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
28.575 mm |
12 ns |
|||||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
55 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J44 |
5.5 V |
3.75 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
10 |
260 |
.0001 Amp |
28.575 mm |
12 ns |
|||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
18.415 mm |
12 ns |
|||||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
10 |
260 |
.000125 Amp |
18.415 mm |
15 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
2097152 bit |
2.5 V |
e1 |
10 |
260 |
.00001 Amp |
8 mm |
55 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
3 mm |
11.305 mm |
Not Qualified |
1048576 bit |
2.5 V |
e3 |
30 |
260 |
.000005 Amp |
20.445 mm |
55 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.5 V |
e3 |
40 |
260 |
.000005 Amp |
18.4 mm |
55 ns |
|||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
105 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3.45 V |
3.56 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
10 |
260 |
.0015 Amp |
20.955 mm |
10 ns |
|||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e4 |
40 |
260 |
.01 Amp |
28.575 mm |
10 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
10 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-J36 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e4 |
40 |
260 |
.01 Amp |
23.495 mm |
10 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,32 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3.14 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.63 V |
1.2 mm |
6 mm |
Not Qualified |
1048576 bit |
3.135 V |
e1 |
10 |
260 |
.01 Amp |
8 mm |
10 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
12 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3.63 V |
2.84 mm |
8.405 mm |
Not Qualified |
262144 bit |
2.97 V |
e3 |
10 |
260 |
.00002 Amp |
18.11 mm |
45 ns |
|||||||||||||
|
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
|
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
|
|
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
12 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3.14 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.135 V |
e3 |
30 |
260 |
.01 Amp |
18.415 mm |
10 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
105 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3.45 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
10 |
260 |
.0015 Amp |
20.95 mm |
10 ns |
|||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e3 |
20 |
260 |
.005 Amp |
20.95 mm |
10 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e3 |
20 |
260 |
.005 Amp |
20.95 mm |
12 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
3 V |
e4 |
30 |
260 |
.0005 Amp |
11.8 mm |
12 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
12 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
40 |
260 |
.01 Amp |
28.575 mm |
15 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
40 |
260 |
.01 Amp |
28.575 mm |
15 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
15 ns |
||||||||||||
|
|
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
12 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
2 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.00033 Amp |
18.415 mm |
15 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
3/3.3 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
1.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7.2 mm |
Not Qualified |
8388608 bit |
2.5 V |
e1 |
10 |
260 |
.00002 Amp |
8.7 mm |
55 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.3 V |
e3 |
.000004 Amp |
11.8 mm |
45 ns |
||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
95 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
9 mm |
Not Qualified |
16777216 bit |
2.4 V |
e0 |
30 |
235 |
.02 Amp |
11 mm |
10 ns |
|||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
AUTOMOTIVE |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
125 Cel |
3-STATE |
1MX16 |
1M |
1.2 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
9 mm |
Not Qualified |
16777216 bit |
2.4 V |
e0 |
.05 Amp |
11 mm |
10 ns |
||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN |
DUAL |
R-PDSO-G32 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e3 |
20.95 mm |
10 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.415 mm |
15 ns |
||||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
3.12 mm |
11.305 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
30 |
260 |
.000015 Amp |
20.495 mm |
45 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
20 |
260 |
.03 Amp |
17.9324 mm |
55 ns |
||||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
40 |
260 |
.015 Amp |
28.575 mm |
15 ns |
|||||||||||
|
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
3 V |
0 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e3 |
20 |
260 |
.05 Amp |
22.415 mm |
10 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
100 mA |
1048576 words |
COMMON |
3 |
2.5/3.3 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,32 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
1.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
9 mm |
Not Qualified |
8388608 bit |
2.4 V |
e1 |
10 |
260 |
.025 Amp |
11 mm |
10 ns |
||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
85 Cel |
256KX8 |
256K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
2097152 bit |
2.2 V |
e3 |
10 |
260 |
45 ns |
|||||||||||||||||||||||||
|
|
Microchip Technology |
STANDARD SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
TS 16949 |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
131072 words |
COMMON/SEPARATE |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP8,.23 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G8 |
1 |
5.5 V |
1.75 mm |
16 MHz |
3.9 mm |
Not Qualified |
1048576 bit |
2.5 V |
e3 |
260 |
NO |
.00002 Amp |
4.9 mm |
||||||||||
|
|
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
8 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
131072 words |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
3 |
2.2 V |
1.1 mm |
3 mm |
1048576 bit |
1.7 V |
e3 |
30 |
260 |
4.4 mm |
|||||||||||||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
10 ns |
||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
AUTOMOTIVE |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
125 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
12 ns |
||||||||||||||||||||||||
|
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
.00045 Amp |
20.95 mm |
12 ns |
|||||||||||||||||
|
|
Diodes Incorporated |
STANDARD SRAM |
MATTE TIN |
1 |
e3 |
30 |
260 |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.