SRAM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS62WV102416GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3	16	SMALL OUTLINE, THIN PROFILE		.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS62WV10248EBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3	8	SMALL OUTLINE, THIN PROFILE		.8 mm	85 Cel		1MX8	1M		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	8388608 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	45 ns
IS62WV51216GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3	16	SMALL OUTLINE, THIN PROFILE		.5 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	8388608 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS66WVE4M16EALL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words			16	GRID ARRAY, THIN PROFILE, FINE PITCH		.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm		6 mm	67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
IS66WVH16M8ALL-166B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8	8	GRID ARRAY, THIN PROFILE		1 mm	85 Cel		16MX8	16M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm	134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
IS66WVH8M8ALL-166B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8	8	GRID ARRAY, THIN PROFILE		1 mm	85 Cel		8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm	67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	36 ns
IS66WVH8M8BLL-100B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		3	8	GRID ARRAY, THIN PROFILE		1 mm	85 Cel		8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	40 ns
23LC1024-I/SNVAO	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	20 MHz	3.9 mm	1048576 bit	2.5 V		e3			NO	.00001 Amp	4.9 mm
IS64WV102416BLL-10MLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.75 mm	125 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		9 mm	16777216 bit	2.4 V							11 mm	10 ns
48L256-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	COMMON		8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm	262144 bit	2.7 V		e3			NO	.0003 Amp	4.9 mm
48L512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON		8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm	524288 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
48L512T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON		8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm	524288 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
48L640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	COMMON		8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm	65536 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
48L640T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	COMMON		8	SMALL OUTLINE	SOP8,.23	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	66 MHz	3.9 mm	65536 bit	2.7 V		e3			NO	.0002 Amp	4.9 mm
48LM01-I/SM	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON		8	SMALL OUTLINE	SOP8,.3	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	2.03 mm	66 MHz	5.25 mm	1048576 bit	2.7 V		e3		260	NO	.0002 Amp	5.26 mm
48LM01T-I/SM	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON		8	SMALL OUTLINE	SOP8,.3	1.27 mm	85 Cel	3-STATE	128KX8	128K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	2.03 mm	66 MHz	5.25 mm	1048576 bit	2.7 V		e3		260	NO	.0002 Amp	5.26 mm
AS6C4008A-55ZINTR	Alliance Memory	STANDARD SRAM																															3
W956D6KBKX7I	Winbond Electronics
IS66WVH8M8DALL-200B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	8MX8	8M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24		1.95 V	1.2 mm	200 MHz	6 mm	67108864 bit	1.7 V				260	NO	.00004 Amp	8 mm
IS66WVS4M8ALL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8	8	SMALL OUTLINE	SOP8,.25	1.27 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-PDSO-G8		1.95 V	1.75 mm	104 MHz	3.9 mm	33554432 bit	1.65 V					NO	.0002 Amp	4.9 mm
IS66WVS2M8BLL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3	8	SMALL OUTLINE	SOP8,.25	1.27 mm	85 Cel		2MX8	2M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	104 MHz	3.9 mm	16777216 bit	2.7 V					NO	.0002 Amp	4.9 mm
CY7C1380KV33-167BZIT	Infineon Technologies	CACHE SRAM		165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	163 mA	524288 words	COMMON	3.3	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	1 mm	85 Cel	3-STATE	512KX36	512K	3.135 V	-40 Cel		BOTTOM	1	R-PBGA-B165	3	3.6 V	1.4 mm	167 MHz	13 mm	18874368 bit	3.135 V	PIPELINED OPERATION				YES	.065 Amp	15 mm	3.4 ns
CY7C1370KV33-167AXIT	Infineon Technologies	ZBT SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	163 mA	524288 words	COMMON	3.3	36	FLATPACK, LOW PROFILE	QFP100,.7X.9,32	.65 mm	85 Cel	3-STATE	512KX36	512K	3.135 V	-40 Cel		QUAD	1	R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	18874368 bit	3.135 V	PIPELINED ARCHITECTURE				YES	.065 Amp	20 mm	3.4 ns
71V30L25TFI	Renesas Electronics	MULTI-PORT SRAM		64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	3.3	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	.5 mm	85 Cel		1KX8	1K		-40 Cel		QUAD		S-PQFP-G64		3.6 V	1.6 mm		10 mm	8192 bit	3 V					YES		10 mm	25 ns
CY7C1380KV33-167AXIT	Infineon Technologies	STANDARD SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	163 mA	524288 words	COMMON	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	.65 mm	85 Cel		512KX36	512K	3.135 V	-40 Cel		QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	167 MHz	14 mm	18874368 bit	3.135 V	PIPE LINED ARCHITECTURE				YES	.08 Amp	20 mm	3.4 ns
S80KS5122GABHV023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHA023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHB023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHM023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	125 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V					NO	.004 Amp	8 mm
S80KS5122GABHI023	Infineon Technologies	HYPERRAM		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	44 mA	67108964 words	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	64MX8	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	536870912 bit	1.7 V					NO	.004 Amp	8 mm
CY14ME064J2-SXQT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	8192 words	COMMON	5	8	SMALL OUTLINE	SOP8,.25	1.27 mm	105 Cel		8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8	3	5.5 V	1.727 mm	3.4 MHz	3.8985 mm	65536 bit	4.5 V					NO	.00025 Amp	4.889 mm
CY14ME064Q2A-SXQT	Infineon Technologies	NON-VOLATILE SRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	8192 words	COMMON	5	8	SMALL OUTLINE	SOP8,.25	1.27 mm	105 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G8		5.5 V	1.727 mm	40 MHz	3.8985 mm	65536 bit	4.5 V					NO	.00025 Amp	4.889 mm
70261S55PFI8	Renesas Electronics	MULTI-PORT SRAM		100	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	270 mA	16384 words	COMMON	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	.5 mm	85 Cel	3-STATE	16KX16	16K	4.5 V	-40 Cel		QUAD	2	S-PQFP-G100		5.5 V	1.6 mm		14 mm	262144 bit	4.5 V					YES	.015 Amp	14 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.