SRAM

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT71016S12PHGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	12 ns
IDT71016S12PHGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	18.41 mm	12 ns
IDT71124S12YGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71124S12YGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71V124SA20PHGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	20 ns
IDT71V124SA20PHGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	20 ns
IDT71V256SA10YG8	Integrated Device Technology	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	10 ns
CY7C1463AV33-133AXC	Cypress Semiconductor	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	2MX18	2M	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	133 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260		.12 Amp	20 mm	6.5 ns
IS61LV51216-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	3.14 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	3.135 V		e3	10	260		.025 Amp	18.415 mm	10 ns
71342LA20J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	20 ns
71342LA20PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	20 ns
71342LA25JI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA25J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	25 ns
71342LA25PFI	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	85 Cel	3-STATE	4KX8	4K	2 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	25 ns
71342LA25PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	25 ns
71342LA35J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	35 ns
71342LA35PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	35 ns
71342LA45J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	45 ns
71342LA55J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	55 ns
71342LA55PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.0015 Amp	14 mm	55 ns
71342LA70J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	2 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.0015 Amp	19.1262 mm	70 ns
71342SA20J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	20 ns
71342SA20PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.015 Amp	14 mm	20 ns
71342SA25J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	25 ns
71342SA25PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	280 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.015 Amp	14 mm	25 ns
71342SA35J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	35 ns
71342SA35PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.015 Amp	14 mm	35 ns
71342SA45J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	45 ns
71342SA55J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	55 ns
71342SA55PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32	SRAMs	.8 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V		e0	30	240		.015 Amp	14 mm	55 ns
71342SA70J	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	240 mA	4096 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	4KX8	4K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	32768 bit	4.5 V		e0	20	225		.015 Amp	19.1262 mm	70 ns
IS62WV10248DBLL-55TLI	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	22 mA	1048576 words	COMMON	1.8	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	1MX8	1M	1.4 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	2.2 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	1.65 V		e3				.00004 Amp	18.415 mm	55 ns
DS2045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			27 mm	100 ns
CY62167DV30LL-45ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	37 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.2 V	CONFIGURABLE AS 2M X 8 ALSO	e4	20	260		.00001 Amp	18.4 mm	45 ns
CY7C025-25AXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX16	8K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	40	260		.015 Amp	14 mm	25 ns
CY7C025-25AXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	8192 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	8KX16	8K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	131072 bit	4.5 V		e3	40	260		.015 Amp	14 mm	25 ns
CY7C1021CV33-10ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.63 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e4	20	260		.005 Amp	18.415 mm	10 ns
CY7C1329H-166AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	240 mA	65536 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3.5 ns
CY7C0830AV-133AI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP120,.63SQ,16	SRAMs	.4 mm	85 Cel	3-STATE	64KX18	64K	3.14 V	-40 Cel	TIN LEAD	QUAD	2	S-PQFP-G120	3	3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.075 Amp	14 mm	4 ns
CY7C1041CV33-20ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260		.015 Amp	18.415 mm	20 ns
CY7C106D-10VXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.003 Amp	18.415 mm	10 ns
CY7C131-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260		.015 Amp	19.1262 mm	55 ns
CY7C131-55JXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260		.015 Amp	19.1262 mm	55 ns
AS6C4008-55SINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	4194304 bit	2.7 V		e3/e6				.00003 Amp		55 ns
CY62157DV30LL-55BVXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260		.000004 Amp	8 mm	55 ns
CY62157DV30LL-55ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260		.000004 Amp	18.415 mm	55 ns
IS61LV25616AL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3.135 V		e3	30	260		.015 Amp	18.415 mm	10 ns
IS61LV5128AL-10KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3.14 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.63 V	3.75 mm		10.16 mm	Not Qualified	4194304 bit	3.135 V		e3	10	260		.02 Amp	23.495 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.