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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
AS7C316098A-10BINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		16777216 bit	2.7 V							8 mm	10 ns
AS7C34096A-12JINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	3 V		e3/e6					23.495 mm	12 ns
AS7C38096A-10BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM		R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		8388608 bit	2.7 V							8 mm	10 ns
AS7C38096A-10TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX8	1M		-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		8388608 bit	2.7 V			40	260			18.415 mm	10 ns
AS7C34098A-10TINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V		e3/e6					18.415 mm	10 ns
HM216514TTI5SE	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm		8388608 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	55 ns
IS61NLP102418B-200TQLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		1MX18	1M		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		18874368 bit	3.135 V			NOT SPECIFIED	NOT SPECIFIED			20 mm	3 ns
71V35761SA200BGGI	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY				85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V					4718592 bit	3.135 V	PIPELINED	e1		260				3.1 ns
71V35761SA200BGI8	Integrated Device Technology	CACHE SRAM																													TIN LEAD				3									e0	20	225
71V3559S75BQI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX18	256K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		4718592 bit	3.135 V		e0		225			15 mm	7.5 ns
71024S25TYG8	Integrated Device Technology	STANDARD SRAM																													MATTE TIN				3									e3	40	260
71024S25TYGI8	Integrated Device Technology	STANDARD SRAM																													MATTE TIN				3									e3	40	260
71024S25TYGI	Integrated Device Technology	STANDARD SRAM																													MATTE TIN				3									e3	40	260
CYD18S36V18-167BBAI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0				.35 Amp	17 mm	4 ns
M74HC670B1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	MATTE TIN	DUAL	1	R-PDIP-T16		6 V	5.1 mm		7.62 mm	Not Qualified	16 bit	2 V		e3			NO			280 ns
M74HC670M1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16		6 V	1.75 mm		3.9 mm	Not Qualified	16 bit	2 V		e4			NO		9.9 mm	280 ns
SN74ACT2160-17FM	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	16384 words		5	5	4	CHIP CARRIER	LDCC32,.5X.6	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel		QUAD	1	R-PQCC-J32		5.25 V				Not Qualified	65536 bit	4.75 V	8K X 4 2-WAY CACHE ADDRESS COMPARATOR/DATA RAM		NOT SPECIFIED	NOT SPECIFIED	NO	.15 Amp		17 ns
SN74ACT2152A-20FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K		0 Cel		QUAD	1	S-PQCC-J28		5.5 V	4.57 mm		11.5062 mm	Not Qualified	16384 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NO		11.5062 mm	20 ns
SNJ54LS670FK	Texas Instruments	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL	MIL-PRF-38535	NO LEAD	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	CHIP CARRIER	LCC20,.35SQ	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	QUAD	1	S-CQCC-N20		5.25 V	2.03 mm	35 MHz	8.89 mm	Not Qualified	16 bit	4.75 V		e0			NO	.05 Amp	8.89 mm	45 ns
X24C44P	Xicor	NON-VOLATILE SRAM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	16 words		5	5	16	IN-LINE	DIP8,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X16	16		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T8		5.5 V	4.07 mm		7.62 mm	Not Qualified	256 bit	4.5 V	EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES	e0			NO	.00005 Amp	10.03 mm	375 ns
CY62256LL-70PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.000005 Amp	36.322 mm	70 ns
CY62256L-70SNC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	1	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.00002 Amp	17.9324 mm	70 ns
CY62256LL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e0			YES		11.8 mm	70 ns
CY7C131-25JC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	TIN LEAD	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e0			YES	.015 Amp	19.1262 mm	25 ns
M48Z2M1Y-70PL1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2097152 words		5	5	8	IN-LINE	DIP36,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2MX8	2M		0 Cel		DUAL	1	R-PDIP-T36		5.5 V	9.52 mm		15.24 mm	Not Qualified	16777216 bit	4.5 V		e0	NOT SPECIFIED	NOT SPECIFIED	YES	.008 Amp	52.96 mm	70 ns
HT6256DC	Honeywell	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	225 Cel	3-STATE	32KX8	32K	2.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	4.445 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00033 Amp	35.56 mm	50 ns
DS1225Y-150-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		150 ns
DS1225AD-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		200 ns
DS1225AD-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		70 ns
DS1230Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		70 ns
DS1230Y-200-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		200 ns
DS1245AB-120-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.25 V				Not Qualified	1048576 bit	4.75 V		e0				.005 Amp		120 ns
DS1245Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		70 ns
SN74AS870DWR	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	2	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE				NO		15.4 mm	15 ns
M48Z128-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	70 ns
M48Z128Y-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3		225	YES	.004 Amp	42.8 mm	70 ns
M48Z128Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.004 Amp	42.8 mm	85 ns
M48Z512AY-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.005 Amp	42.8 mm	70 ns
M48Z512A-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T32		5.5 V	9.52 mm		15.24 mm	Not Qualified	4194304 bit	4.75 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3			YES	.005 Amp	42.8 mm	70 ns
M48Z02-150PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M48Z02-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z02-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
M48Z12-200PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	34.545 mm	200 ns
M48Z12-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e3			YES	.003 Amp	34.545 mm
IDT71024S15TYI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3	5.5 V	3.759 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	15 ns
LH5164A-10L	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	-10 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.2 mm		15.24 mm	Not Qualified	65536 bit	4.5 V					YES		36 mm	100 ns
71V35761S183BGGI8	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	22 mm	3.3 ns
71V35761S183BGGI	Integrated Device Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	22 mm	3.3 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.