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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C131E-15NXI	Cypress Semiconductor	MULTI-PORT SRAM	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	1024 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ		SRAMs	.65 mm	85 Cel	3-STATE	1KX8	1K	4.5 V	-40 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	8192 bit	4.5 V	e3		260		.015 Amp	10 mm	15 ns
CY7C131E-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	e3	20	260		.015 Amp	19.1262 mm	55 ns
CY7C136E-25JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	e3	30	260		.015 Amp	19.1262 mm	25 ns
CY7C136E-25NXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5	5	8	FLATPACK	QFP52,.52SQ		SRAMs	.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G52	3	5.5 V	2.5 mm		10 mm	Not Qualified	16384 bit	4.5 V	e3				.015 Amp	10 mm	25 ns
AS6C4008A-55ZIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		11.76 mm		4194304 bit	2.7 V	e3/e6	40	260			20.95 mm	55 ns
23A1024-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		2.2 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	1048576 bit	1.7 V	e3			NO	.000004 Amp	9.271 mm
23LCV512-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON			8	IN-LINE	DIP8,.3			2.54 mm	85 Cel	3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		5.5 V	5.334 mm	20 MHz	7.62 mm		524288 bit	2.5 V	e3			NO	.00001 Amp	9.271 mm
IS61WV6416EEBLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	65536 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.4 V					.004 Amp	18.41 mm	10 ns
AS7C316096A-10TINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	2097152 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.7 V	e3/e6				.04 Amp	18.4 mm	10 ns
AS7C316096A-10TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	2097152 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.7 V	e3/e6				.04 Amp	18.4 mm	10 ns
AS6C3216-55TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	2MX16	2M	1.2 V	-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	33554432 bit	2.7 V	e3/e6				.002 Amp	18.4 mm	55 ns
AS7C316098A-10TIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.7 V	e3/e6	40	260	YES	.04 Amp	18.4 mm	10 ns
IS61LPS25618EC-200TQLI	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	e3	10	260		.085 Amp	20 mm	3.1 ns
IS61VPS204836B-250B3LI	Integrated Silicon Solution	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.625 V	1.2 mm	250 MHz	13 mm	Not Qualified	75497472 bit	2.375 V	e1	10	260			15 mm	2.6 ns
UPD46184182BF1-E40-EQ1	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	430 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		.38 Amp	15 mm	.45 ns
UPD46184184BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	400 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	e6				.38 Amp	15 mm	.45 ns
UPD46184185BF1-E33Y-EQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX18	1M		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46184185BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	480 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	e6				.38 Amp	15 mm	.45 ns
UPD46184362BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	510 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	e6				.43 Amp	15 mm	.45 ns
UPD46184362BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		512KX36	512K		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185092BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX9	2M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185094BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX9	2M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185094BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		9	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX9	2M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185182BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX18	1M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185182BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX18	1M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185184BF1-E40Y-EQ1-A	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX18	1M		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185362BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		512KX36	512K		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185364BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		512KX36	512K		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46185364BF1-E40Y-EQ1-A	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		512KX36	512K		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		18874368 bit	1.7 V	e6					15 mm	.45 ns
UPD46364182BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX18	2M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46364362BF1-E33-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46364362BF1-E40Y-EQ1-A	Renesas Electronics	DDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46364365BF1-E40-EQ1-A	Renesas Electronics	DDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365084BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		8	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX8	4M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		33554432 bit	1.7 V	e6					15 mm	.45 ns
UPD46365092BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX9	4M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365094BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		4MX9	4M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365182BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX18	2M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365184BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		2MX18	2M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365184BF1-E33Y-EQ1-A	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX18	2M		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365184BF1-E40Y-EQ1-A	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		2MX18	2M		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365362BF1-E33-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365362BF1-E40Y-EQ1-A	Renesas Electronics	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX36	1M		-40 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
UPD46365364BF1-E40-EQ1-A	Renesas Electronics	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel	TIN BISMUTH	BOTTOM		R-PBGA-B165		1.9 V	1.46 mm		13 mm		37748736 bit	1.7 V	e6					15 mm	.45 ns
CY62256NLL-55ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V	e4	30	260		.00001 Amp	11.8 mm	55 ns
CY62256NLL-70SNXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V	e4	20	260		.000005 Amp	17.9324 mm	70 ns
CY7C1049DV33-10ZSXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e4	20	260		.01 Amp	18.415 mm	10 ns
W968D6DAGX7I	Winbond Electronics	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	40 mA	16777216 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		Other Memory ICs	.75 mm	85 Cel	3-STATE	16MX16	16M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	268435456 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	YES	.0004 Amp	8 mm	70 ns
AS7C1024B-15JCNTR	Alliance Memory	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32	3	5.5 V	3.7084 mm		10.16 mm		1048576 bit	4.5 V						20.995 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.