6 RF & Microwave Amplifiers 83

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
UPC8240T6N-E2-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			9 mA		1.8/2.7	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGU7003,132	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			15 mA		2.5	SOLCC6,.04,14		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
UPC2763TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			35 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGA2865,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			29.7 mA		5	TSSOP6,.08		RF/Microwave Amplifiers
BGU7032,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1				COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	TIN		e3		1000 MHz
BGA2850,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			10.8 mA		5	TSSOP6,.08		RF/Microwave Amplifiers
BGA2816,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			25.5 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers
UPD5750T7D-E4A-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1			4.5 mA		1.8	BGA6,2X3,10		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGU7041,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1					3.3	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	Tin (Sn)		e3
BGU7042,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			60 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	Tin (Sn)		e3
BGU6104,147	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			40 mA	COMPONENT	3	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel	TIN		e3	40 MHz	4000 MHz
BGU7003W,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			15 mA		2.5	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGA2874,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			19 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
BGU8007,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		1			14.7 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
UPC8232T5N-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.1 mA		3	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
BGU8011X,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1					1.8/2.85	SOLCC6,.04,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MGA-64606-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	12 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		14 dB		Gold (Au) - with Nickel (Ni) barrier		e4	1500 MHz	3000 MHz
MGA-64606-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	12 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		14 dB		Gold (Au) - with Nickel (Ni) barrier		e4	1500 MHz	3000 MHz
MGA-65606-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	12 dBm		12 mA	COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		14 dB		Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	4000 MHz
MGA-65606-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	12 dBm		12 mA	COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		14 dB		Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	4000 MHz
MGA-24106-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm		4.5 mA	COMPONENT	1.8/3.3	SOLCC6,.06,16		RF/Microwave Amplifiers	85 Cel	16.2 dB	-40 Cel		CMOS COMPATIBLE		900 MHz	3500 MHz
MGA-24106-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm		4.5 mA	COMPONENT	1.8/3.3	SOLCC6,.06,16		RF/Microwave Amplifiers	85 Cel	16.2 dB	-40 Cel		CMOS COMPATIBLE		900 MHz	3500 MHz
MGA-24106-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm		4.5 mA	COMPONENT	1.8/3.3	SOLCC6,.06,16		RF/Microwave Amplifiers	85 Cel	16.2 dB	-40 Cel		CMOS COMPATIBLE		900 MHz	3500 MHz
UPC2771TB-E3-A	Renesas Electronics		SURFACE MOUNT	6	PLASTIC/EPOXY		1			45 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
MGA-231T6-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm		6.6 mA	COMPONENT	1.8/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel	15.2 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	3500 MHz
MGA-231T6-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm		6.6 mA	COMPONENT	1.8/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel	15.2 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	3500 MHz
AVT-53663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	18 dBm		51 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-53663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	18 dBm		51 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
MAX2640EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	300 MHz	1500 MHz
MAX2641EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	1400 MHz	2500 MHz
MAX2374EBT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm	10	10.5 mA	COMPONENT	3/5	BGA6,2X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel	Tin/Lead (Sn63Pb37)		e0	750 MHz	1000 MHz
MAX2655EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		11.1 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	TIN LEAD		e0	1400 MHz	1700 MHz
MAX2656EXT-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		15.2 mA	COMPONENT	2.7/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	TIN LEAD		e0	1800 MHz	2000 MHz
MGA-645T6-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		13.5 dB		Gold (Au) - with Nickel (Ni) barrier	LOW NOISE	e4	1500 MHz	3000 MHz
MGA-68563-BLKG	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm		16 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3
MGA-68563-TR1G	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm		16 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3
MGA-68563-TR2G	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm		16 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3
MGA-655T6-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	14 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		12.8 dB		Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	4000 MHz
MGA-655T6-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	14 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		12.8 dB		Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	4000 MHz
MGA-655T6-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	14 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		12.8 dB		Gold (Au) - with Nickel (Ni) barrier		e4	2500 MHz	4000 MHz
MGA-685T6-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2		COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		17.5 dB		Gold (Au) - with Nickel (Ni) barrier		e4	100 MHz	1500 MHz
MGA-685T6-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2		COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		17.5 dB		Gold (Au) - with Nickel (Ni) barrier		e4	100 MHz	1500 MHz
MGA-685T6-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	21 dBm	2		COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		17.5 dB		Gold (Au) - with Nickel (Ni) barrier		e4	100 MHz	1500 MHz
MGA-675T6-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	12 dBm		13 mA	COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		16.3 dB		Gold (Au) - with Nickel (Ni) barrier		e4	4900 MHz	6000 MHz
MGA-675T6-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	12 dBm		13 mA	COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		16.3 dB		Gold (Au) - with Nickel (Ni) barrier		e4	4900 MHz	6000 MHz
UPC8236T6N-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		8 mA	COMPONENT	2.7	SOLCC6,.06,20		RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel
BGA2012,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
BGA2031/1,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.