6 RF & Microwave Amplifiers 83

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA2748,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	10 dBm		8 mA	COMPONENT	3	TSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGA2771,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGM1014,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGM1013,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGM1012,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2717,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2715,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	-10 dBm		5.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2712,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2709,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
AVT-50663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		39.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-50663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		39.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-52663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		49 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-52663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		49 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
MGA-645T6-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		13.5 dB		Gold (Au) - with Nickel (Ni) barrier	LOW NOISE	e4	1500 MHz	3000 MHz
MGA-645T6-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		13.5 dB		Gold (Au) - with Nickel (Ni) barrier	LOW NOISE	e4	1500 MHz	3000 MHz
MAX2644EXT-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2641EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD		e0	1400 MHz	2500 MHz
SMA661ASTR	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1				COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	LOW NOISE	e4
THS9000DRWR	Texas Instruments	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			100 mA	COMPONENT	5		50 ohm		85 Cel	15.7 dB	-40 Cel	NICKEL PALLADIUM GOLD SILVER		e4	50 MHz	400 MHz
AVT-51663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		40 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
MGA-635T6-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		10 mA	COMPONENT	1/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers		12.5 dB		Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	2400 MHz
MGA-635T6-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		10 mA	COMPONENT	1/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers		12.5 dB		Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	2400 MHz
MGA-635T6-TR2G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		10 mA	COMPONENT	1/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers		12.5 dB		Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	2400 MHz
HMC8412LP2FETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
HMC8412LP2FE	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6			1	25 dBm	1.375		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	11000 MHz
ADL8121ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT	1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
ADL8121ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6		PHEMT	1	32 dBm	1.43		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	15 dB	-40 Cel				25 MHz	12000 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
UPC2746TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC7748	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	8 dBm	6	4000 mA	COMPONENT	12,28	MODULE,6LEAD,2.9	50 ohm		70 Cel	58 dB	-40 Cel				2000 MHz	6000 MHz
CMPA5259050F	Wolfspeed	WIDE BAND HIGH POWER	SURFACE MOUNT	6	CERAMIC	PHEMT	1		3	1000 mA	COMPONENT	28		50 ohm		105 Cel	31 dB	-40 Cel				5200 MHz	5900 MHz
HMC8413LP2FETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6		PHEMT	1	25 dBm	1.29		COMPONENT	5	SOLCC6,.08,25	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	9000 MHz
UPC2710TB-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	1.67	29 mA	COMPONENT	5	TSSOP6,.08	50 ohm		85 Cel	33 dB	-40 Cel					1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.