PLASTIC/EPOXY RF & Microwave Amplifiers 412

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MGA-30989-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		66 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		8.5 dB		Tin (Sn)		e3	2000 MHz	6000 MHz
MGA-30989-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		66 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		8.5 dB		Matte Tin (Sn)		e3	2000 MHz	6000 MHz
MGA-43228-BLKG	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC28,.2SQ,20		RF/Microwave Amplifiers		35 dB		Tin (Sn)		e3	2300 MHz	2500 MHz
MGA-43228-TR1G	Broadcom	NARROW BAND HIGH POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC28,.2SQ,20		RF/Microwave Amplifiers		35 dB		Tin (Sn)		e3	2300 MHz	2500 MHz
MGA-53589-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	13 dBm		52 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		15.3 dB		Matte Tin (Sn)	LOW NOISE	e3	50 MHz	3000 MHz
MGA-53589-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	13 dBm		52 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		15.3 dB		Matte Tin (Sn)	LOW NOISE	e3	50 MHz	3000 MHz
MGA-633P8-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm		67 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Tin (Sn)		e3	450 MHz	2000 MHz
MGA-633P8-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	20 dBm		67 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Matte Tin (Sn)		e3	450 MHz	2000 MHz
SKY65116-21	Skyworks Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1			1300 mA	COMPONENT	3.6	LCC12,.32SQ,75/64	50 ohm		85 Cel	35 dB	-40 Cel	Gold (Au)	HIGH RELIABILITY	e4	390 MHz	500 MHz
MGA-412P8-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	10 dBm		55 mA	COMPONENT	3.3	SOLCC8,.08,20		RF/Microwave Amplifiers		23 dB		Matte Tin (Sn)		e3	1700 MHz	3000 MHz
MGA-412P8-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	10 dBm		55 mA	COMPONENT	3.3	SOLCC8,.08,20		RF/Microwave Amplifiers		23 dB		Matte Tin (Sn)		e3	1700 MHz	3000 MHz
MGA-412P8-TR2G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	10 dBm		55 mA	COMPONENT	3.3	SOLCC8,.08,20		RF/Microwave Amplifiers		23 dB		Matte Tin (Sn)		e3	1700 MHz	3000 MHz
MGA-635T6-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		10 mA	COMPONENT	1/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers		12.5 dB		Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	2400 MHz
MGA-635T6-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		10 mA	COMPONENT	1/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers		12.5 dB		Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	2400 MHz
MGA-635T6-TR2G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		10 mA	COMPONENT	1/2.85	SOLCC6,.08,20		RF/Microwave Amplifiers		12.5 dB		Gold (Au) - with Nickel (Ni) barrier	CMOS COMPATIBLE	e4	900 MHz	2400 MHz
AMMP-6233-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		90 mA	COMPONENT	3	LCC8(UNSPEC)	50 ohm	RF/Microwave Amplifiers		20 dB					18000 MHz	32000 MHz
AMMP-6233-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		90 mA	COMPONENT	3	LCC8(UNSPEC)	50 ohm	RF/Microwave Amplifiers		20 dB					18000 MHz	32000 MHz
AMMP-6233-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	10 dBm		90 mA	COMPONENT	3	LCC8(UNSPEC)	50 ohm	RF/Microwave Amplifiers		20 dB					18000 MHz	32000 MHz
AFIC31025GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
HMC1114PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
A3I35D012WGNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY		2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
A3I20X050GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
HMC716ALP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm		85 Cel	15.5 dB	-40 Cel				3100 MHz	3900 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
UPC2746TB-E3-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			10 mA		3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1114LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC1099LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC7748	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	8 dBm	6	4000 mA	COMPONENT	12,28	MODULE,6LEAD,2.9	50 ohm		70 Cel	58 dB	-40 Cel				2000 MHz	6000 MHz
HMC716ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm		85 Cel	15.5 dB	-40 Cel				3100 MHz	3900 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
ADL5723ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	24.1 dB	-40 Cel				10100 MHz	11700 MHz
ADL5726ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm		85 Cel	22.5 dB	-40 Cel				21200 MHz	23600 MHz
HMC994ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1			300 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm			11 dB		Matte Tin (Sn)		e3		28000 MHz
HMC1114LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC717ALP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm		85 Cel	11 dB	-40 Cel	MATTE TIN		e3	4800 MHz	6000 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		TIN		e3	1000 MHz	4000 MHz
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MMRF2010NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
HMC907APM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
HMC618ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	10 dBm		65 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel	12.5 dB	-40 Cel	MATTE TIN		e3	1200 MHz	2200 MHz
HMC907APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		85 Cel	12 dB	-40 Cel				200 MHz	22000 MHz
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			23.5 dB		TIN		e3	1500 MHz	2700 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
MMZ38333BT1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID	1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			36.3 dB		TIN		e3	3400 MHz	3800 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.