PLASTIC/EPOXY RF & Microwave Amplifiers 412

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	2800 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm	150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm	150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
BGU8062J	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm				NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGU8051,118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm	1.07	60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	85 Cel	17 dB	-40 Cel				300 MHz	1500 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm	150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN		1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm	150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,40	50 ohm	125 Cel	27.1 dB					3700 MHz	4000 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	30	LCC26,.24X.4,40	50 ohm	125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm	125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm	125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT		1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm	85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
HMC717ALP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT		1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC12,.12SQ,20	50 ohm	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4800 MHz	6000 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,20	50 ohm	125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm	125 Cel	30 dB					2300 MHz	4200 MHz
F6922AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	17700 MHz	21200 MHz
F6922AVRI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	17700 MHz	21200 MHz
F6923AVRI8	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	14000 MHz	17000 MHz
F6923AVRI	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	23	PLASTIC/EPOXY			2	0 dBm	2		COMPONENT	0.95	BGA23,5X5,20	50 ohm	85 Cel	19.5 dB	-40 Cel	TIN		e3	14000 MHz	17000 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	27	LCC26,.24X.4,20	50 ohm	125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz
UPC2710TB-A	Renesas Electronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.67	29 mA	COMPONENT	5	TSSOP6,.08	50 ohm	85 Cel	33 dB	-40 Cel					1000 MHz
TRF1208RPVR	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm	105 Cel	16 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	11000 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	115 Cel	33.8 dB	-40 Cel				2300 MHz	5000 MHz
TRF1208RPVT	Texas Instruments	WIDE BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BICMOS		1	20 dBm			COMPONENT	3.3	LCC12,.08SQ,20	100 ohm	105 Cel	16 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	10 MHz	11000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.