WIDE BAND HIGH POWER RF & Microwave Amplifiers 65

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CMPA0060002F	Wolfspeed	WIDE BAND HIGH POWER							5		MODULE			50 ohm		150 Cel	13.5 dB	-40 Cel				20 MHz	6000 MHz
CMPA2560025F	Wolfspeed	WIDE BAND HIGH POWER							5		MODULE			50 ohm			19.5 dB					2500 MHz	6000 MHz
MAAP-010168-000000	M/a-com Technology Solutions	WIDE BAND HIGH POWER						24 dBm			MODULE			50 ohm		85 Cel	19 dB	-40 Cel		HIGH RELIABILITY		500 MHz	3000 MHz
TRF7610PWP	Texas Instruments	WIDE BAND HIGH POWER						13 dBm	6		COMPONENT					85 Cel	30 dB	-40 Cel				800 MHz	1000 MHz
ALM-32220-BLKG	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz
ALM-32220-TR1G	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz
ALM-32220-TR2G	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz
BGD502,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel	Gold (Au)	LOW NOISE	e4	40 MHz	550 MHz
BGD702N,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGD704,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGD714,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.8 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	750 MHz
BGD802,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGD804,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGD812,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD814,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD816L,112	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID	1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD902,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		435 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
BGD904,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD906,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGE788,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGR269,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			175 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	200 MHz
BGY1085A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGY585A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY588N,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY66B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
BGY67A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGY785A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY885A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY885B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY887,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY887B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
BGY888,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
CGD914,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	19.75 dBm		375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.2 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
CGD923,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			490 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.5 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
CGY887A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	25.7 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
CGY887B,112	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID	1			325 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
SKY65116-21	Skyworks Solutions	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1			1300 mA	COMPONENT	3.6	LCC12,.32SQ,75/64	50 ohm		85 Cel	35 dB	-40 Cel	Gold (Au)	HIGH RELIABILITY	e4	390 MHz	500 MHz
HMC1114PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
HMC1114LP5DE	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC1087F10	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	10	CERAMIC	GAN	1	34 dBm	6		COMPONENT	28		50 ohm		85 Cel	11 dB	-40 Cel				2000 MHz	20000 MHz
HMC1099LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel				10 MHz	1100 MHz
HMC7748	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1	8 dBm	6	4000 mA	COMPONENT	12,28	MODULE,6LEAD,2.9	50 ohm		70 Cel	58 dB	-40 Cel				2000 MHz	6000 MHz
HMC1121LP6GETR	Analog Devices	WIDE BAND HIGH POWER						24 dBm			COMPONENT			50 ohm		85 Cel	25 dB	-40 Cel	MATTE TIN		e3	5500 MHz	8500 MHz
HMC1121LP6GE	Analog Devices	WIDE BAND HIGH POWER						24 dBm			COMPONENT			50 ohm		85 Cel	25 dB	-40 Cel	MATTE TIN		e3	5500 MHz	8500 MHz
HMC1114LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm		85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC8113	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm		50 Cel	85 dB	10 Cel		TTL COMPATIBLE		2000 MHz	6000 MHz
HMC8114	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm		64 Cel	53 dB	-20 Cel		TTL COMPATIBLE		5800 MHz	18000 MHz
HMC7885FH18	Analog Devices	WIDE BAND HIGH POWER						36 dBm	2		MODULE			50 ohm		60 Cel	21 dB	-30 Cel				2000 MHz	6000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.