WIDE BAND HIGH POWER RF & Microwave Amplifiers 65

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8205BF10	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL	e4	300 MHz	6000 MHz
PTMA080152MV1AUMA1	Infineon Technologies	WIDE BAND HIGH POWER						42 dBm	10		COMPONENT			50 ohm		29 dB		Tin (Sn)	e3	700 MHz	1000 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	2800 MHz
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	2800 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS	1	20 dBm	10		COMPONENT	48		50 ohm	150 Cel	35 dB	-40 Cel	TIN	e3	575 MHz	960 MHz
CMPA5259050F	Wolfspeed	WIDE BAND HIGH POWER	SURFACE MOUNT	6	CERAMIC	PHEMT	1		3	1000 mA	COMPONENT	28		50 ohm	105 Cel	31 dB	-40 Cel			5200 MHz	5900 MHz
HMC8415LP6GETR	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm	85 Cel	25.5 dB	-40 Cel	MATTE TIN	e3	9000 MHz	10500 MHz
HMC8415LP6GE	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm	85 Cel	25.5 dB	-40 Cel	MATTE TIN	e3	9000 MHz	10500 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	2700 MHz	3800 MHz
HMC8205BCHIPS	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm	85 Cel	24.5 dB	-55 Cel			400 MHz	6000 MHz
ADCA3992AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	8		HYBRID	1			550 mA	MODULE	34	SOT-115J	75 ohm	85 Cel	26.7 dB	-30 Cel			45 MHz	1218 MHz
ADCA3952AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	8		PHEMT	1	75 dBm		490 mA	MODULE	24		75 ohm	85 Cel	25 dB	-30 Cel			45 MHz	1218 MHz
ADCA3950AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	7		PHEMT	1	75 dBm		490 mA	MODULE	24		75 ohm	85 Cel	25 dB	-30 Cel			45 MHz	1218 MHz
ADPA1107ACPZN	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN	1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm	85 Cel	27 dB	-40 Cel			4800 MHz	6000 MHz
ADPA1107ACPZN-R7	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	40		GAN	1	31 dBm	1.54		COMPONENT		LCC40,.24SQ,20	50 ohm	85 Cel	27 dB	-40 Cel			4800 MHz	6000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.