WIDE BAND LOW POWER RF & Microwave Amplifiers 233

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Maximum Supply Voltage	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGM1013,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGM1012,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGM1011,115	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			28 dB		Tin (Sn)		e3
BGA2717,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2715,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		5.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2712,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2709,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
AVT-50663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		39.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-50663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		39.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-52663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		49 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
AVT-52663-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		49 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.8 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
MGA-645T6-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		13.5 dB		Gold (Au) - with Nickel (Ni) barrier	LOW NOISE	e4	1500 MHz	3000 MHz
MGA-645T6-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	15 dBm			COMPONENT	3	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers		13.5 dB		Gold (Au) - with Nickel (Ni) barrier	LOW NOISE	e4	1500 MHz	3000 MHz
AMMP-6222-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	10 dBm		160 mA	COMPONENT	4	LCC8(UNSPEC)	50 ohm	RF/Microwave Amplifiers		23 dB		Nickel/Gold (Ni/Au)	LOW NOISE	e4	7000 MHz	21000 MHz
AMF-3F-17701970-45-8P	L-3 Narda-miteq	WIDE BAND LOW POWER								2		COAXIAL						24 dB			K/SMA		17700 MHz	19700 MHz
MAX2632EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
MAX2641EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD		e0	1400 MHz	2500 MHz
MAX2473EUT	Maxim Integrated	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel	TIN LEAD		e0	500 MHz	2500 MHz
MAX2611EUS-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY			1	13 dBm	1.6		COMPONENT	3.8	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	17.3 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	0 MHz	1100 MHz
SKY65013-70LF	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm	2		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	12.5 dB	-40 Cel					7000 MHz
SKY65015-92LF	Skyworks Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	15 dBm	2		COMPONENT	4.7	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-45 Cel					6000 MHz
ALM-GA001-BLKG	Broadcom	WIDE BAND LOW POWER							13 dBm			COMPONENT					85 Cel	16.2 dB	-40 Cel		CMOS COMPATIBLE		900 MHz	3500 MHz
ALM-GA001-TR1G	Broadcom	WIDE BAND LOW POWER							13 dBm			COMPONENT					85 Cel	16.2 dB	-40 Cel		CMOS COMPATIBLE		900 MHz	3500 MHz
AD8353ACP-R2	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	10 dBm		52 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.6 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	1 MHz	2700 MHz
SMA661ASTR	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1				COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	LOW NOISE	e4
AMMP-6333-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		230 mA	COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		18 dB		Nickel/Gold (Ni/Au)		e4	18000 MHz	33000 MHz
AMMP-6333-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		230 mA	COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		18 dB		Nickel/Gold (Ni/Au)		e4	18000 MHz	33000 MHz
AMMP-6333-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		5 V	1	20 dBm			COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		18 dB					18000 MHz	33000 MHz
AMMP-6421-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	23 dBm			COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		24 dB					13000 MHz	16000 MHz
AMMP-6421-TR2G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1	23 dBm			COMPONENT	5	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		24 dB					13000 MHz	16000 MHz
AVT-51663-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		40 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin (Sn)		e3	0 MHz	6000 MHz
MGA-16516-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		2	15 dBm			COMPONENT	5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers		15.8 dB		Tin (Sn)		e3	1700 MHz	2700 MHz
MGA-16516-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		2	15 dBm			COMPONENT	5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers		15.8 dB		Tin (Sn)		e3	1700 MHz	2700 MHz
MGA-30889-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	20 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.6 dB		Matte Tin (Sn)		e3	40 MHz	2600 MHz
MGA-30889-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	20 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.6 dB		Tin (Sn)		e3	40 MHz	2600 MHz
MGA-53589-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	13 dBm		52 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		15.3 dB		Matte Tin (Sn)	LOW NOISE	e3	50 MHz	3000 MHz
MGA-53589-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	13 dBm		52 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		15.3 dB		Matte Tin (Sn)	LOW NOISE	e3	50 MHz	3000 MHz
VMMK-2103-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	20 dBm	2	30 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)	LOW NOISE	e3	500 MHz	6000 MHz
VMMK-2103-TR1G	Broadcom	WIDE BAND LOW POWER				GAAS		1	20 dBm	2	30 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)	LOW NOISE	e3	500 MHz	6000 MHz
VMMK-2203-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	13 dBm		30 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	11000 MHz
VMMK-2203-TR1G	Broadcom	WIDE BAND LOW POWER				GAAS		1	13 dBm		30 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	11000 MHz
VMMK-2303-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	13 dBm	2	28 mA	COMPONENT	1.8	WAFER	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)	LOW NOISE	e3	500 MHz	6000 MHz
VMMK-2303-TR1G	Broadcom	WIDE BAND LOW POWER				GAAS		1	13 dBm	2	28 mA	COMPONENT	1.8	WAFER	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)	LOW NOISE	e3	500 MHz	6000 MHz
VMMK-2403-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	20 dBm		45 mA	COMPONENT	3	WAFER	50 ohm	RF/Microwave Amplifiers		14 dB		Tin (Sn)	LOW NOISE	e3	2000 MHz	4000 MHz
VMMK-2403-TR1G	Broadcom	WIDE BAND LOW POWER				GAAS		1	20 dBm		45 mA	COMPONENT	3	WAFER	50 ohm	RF/Microwave Amplifiers		14 dB		Tin (Sn)	LOW NOISE	e3	2000 MHz	4000 MHz
VMMK-2503-BLKG	Broadcom	WIDE BAND LOW POWER				GAAS		1	20 dBm		88 mA	COMPONENT	5	WAFER	50 ohm	RF/Microwave Amplifiers		12.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	12000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.