| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
50000 MHz |
95000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
50000 MHz |
95000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
22 |
PHEMT |
1 |
50 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
85 Cel |
19.5 dB |
-55 Cel |
71000 MHz |
86000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
22 |
PHEMT |
1 |
50 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
85 Cel |
19.5 dB |
-55 Cel |
71000 MHz |
86000 MHz |
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|
Infineon Technologies |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
150 Cel |
17.5 dB |
-65 Cel |
0 MHz |
2400 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
18 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
300 MHz |
20000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
20000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
105 Cel |
9 dB |
-55 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
10000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
105 Cel |
9 dB |
-55 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
10000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
5000 MHz |
11000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-55 Cel |
2000 MHz |
50000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
7000 MHz |
14000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
9.5 dB |
-40 Cel |
2000 MHz |
18000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
6000 MHz |
18000 MHz |
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|
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
18000 MHz |
31500 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
20000 MHz |
44000 MHz |
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|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
20 dBm |
1.43 |
85 mA |
COMPONENT |
5 |
SOLCC10,.12SQ,20 |
50 ohm |
NICKEL PALLADIUM GOLD |
e4 |
1500 MHz |
2700 MHz |
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|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.07 |
60 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
300 MHz |
1500 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
18 dBm |
COMPONENT |
50 ohm |
105 Cel |
10 dB |
-55 Cel |
300 MHz |
20000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
0 MHz |
48000 MHz |
||||||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
0 MHz |
48000 MHz |
|||||||||||||||||
|
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
18000 MHz |
31500 MHz |
|||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.6 dB |
-40 Cel |
10 MHz |
8000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
125 Cel |
11 dB |
-55 Cel |
10 MHz |
10000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
6000 MHz |
18000 MHz |
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|
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
1 |
24 dBm |
1.67 |
75 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
30 MHz |
8000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
PHEMT |
1 |
22 dBm |
1.49 |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
10 MHz |
26500 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
20 dBm |
1.43 |
100 mA |
COMPONENT |
3/5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4800 MHz |
6000 MHz |
||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1.1 |
86 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
18 dB |
-40 Cel |
LOW NOISE |
3000 MHz |
4200 MHz |
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|
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
23 |
PLASTIC/EPOXY |
2 |
0 dBm |
2 |
COMPONENT |
0.95 |
BGA23,5X5,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
TIN |
e3 |
17700 MHz |
21200 MHz |
||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
23 |
PLASTIC/EPOXY |
2 |
0 dBm |
2 |
COMPONENT |
0.95 |
BGA23,5X5,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
TIN |
e3 |
17700 MHz |
21200 MHz |
|||||||||
|
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
23 |
PLASTIC/EPOXY |
2 |
0 dBm |
2 |
COMPONENT |
0.95 |
BGA23,5X5,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
TIN |
e3 |
14000 MHz |
17000 MHz |
||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
23 |
PLASTIC/EPOXY |
2 |
0 dBm |
2 |
COMPONENT |
0.95 |
BGA23,5X5,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
TIN |
e3 |
14000 MHz |
17000 MHz |
|||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
1.67 |
29 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
85 Cel |
33 dB |
-40 Cel |
1000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
22 dBm |
1.54 |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
6000 MHz |
18000 MHz |
||||||||||
|
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BICMOS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
100 ohm |
105 Cel |
16 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
10 MHz |
11000 MHz |
||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PHEMT |
1 |
18 dBm |
1.25 |
84 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
2000 MHz |
20000 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
PHEMT |
1 |
0 dBm |
1.92 |
65 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
6000 MHz |
26500 MHz |
||||||
|
|
Texas Instruments |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BICMOS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC12,.08SQ,20 |
100 ohm |
105 Cel |
16 dB |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
10 MHz |
11000 MHz |
||||||||
|
Cml Microcircuits |
WIDE BAND LOW POWER |
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|
Cml Microcircuits |
WIDE BAND LOW POWER |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.