| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
|||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
24 dBm |
117 mA |
COMPONENT |
5 |
TO-243 |
RF/Microwave Amplifiers |
8 dB |
Tin (Sn) |
e3 |
2000 MHz |
6000 MHz |
||||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
24 dBm |
117 mA |
COMPONENT |
5 |
TO-243 |
RF/Microwave Amplifiers |
8 dB |
Matte Tin (Sn) |
e3 |
2000 MHz |
6000 MHz |
||||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
66 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
8.5 dB |
Tin (Sn) |
e3 |
2000 MHz |
6000 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
66 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
8.5 dB |
Matte Tin (Sn) |
e3 |
2000 MHz |
6000 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
55 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
23 dB |
Matte Tin (Sn) |
e3 |
1700 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
55 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
23 dB |
Matte Tin (Sn) |
e3 |
1700 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
55 mA |
COMPONENT |
3.3 |
SOLCC8,.08,20 |
RF/Microwave Amplifiers |
23 dB |
Matte Tin (Sn) |
e3 |
1700 MHz |
3000 MHz |
|||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
10 mA |
COMPONENT |
1/2.85 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
12.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
CMOS COMPATIBLE |
e4 |
900 MHz |
2400 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
10 mA |
COMPONENT |
1/2.85 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
12.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
CMOS COMPATIBLE |
e4 |
900 MHz |
2400 MHz |
||||||||
|
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
10 mA |
COMPONENT |
1/2.85 |
SOLCC6,.08,20 |
RF/Microwave Amplifiers |
12.5 dB |
Gold (Au) - with Nickel (Ni) barrier |
CMOS COMPATIBLE |
e4 |
900 MHz |
2400 MHz |
||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
71000 MHz |
76000 MHz |
||||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
PHEMT |
1 |
17 dBm |
350 mA |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
50000 MHz |
95000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
22 |
GAAS |
1 |
25 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
20000 MHz |
44000 MHz |
|||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
25 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PHEMT |
1 |
18 dBm |
1.15 |
COMPONENT |
-0.4,3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
40000 MHz |
80000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PHEMT |
1 |
20 dBm |
1.17 |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
17.5 dB |
-55 Cel |
20000 MHz |
54000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
||||||||||
|
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
11 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2400 MHz |
2500 MHz |
||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
22 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
0 MHz |
40000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
0 MHz |
6000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
COMPONENT |
6 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
28 dB |
-55 Cel |
Matte Tin (Sn) - annealed |
e3 |
8000 MHz |
14000 MHz |
||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
PHEMT |
1 |
450 mA |
COMPONENT |
4 |
DIE OR CHIP |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
71000 MHz |
76000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
PHEMT |
1 |
450 mA |
COMPONENT |
4 |
DIE OR CHIP |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
71000 MHz |
76000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
PHEMT |
1 |
300 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
11 dB |
Matte Tin (Sn) |
e3 |
28000 MHz |
|||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
0 MHz |
22000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
E-PHEMT |
1 |
450 mA |
COMPONENT |
4 |
DIE OR CHIP |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
81000 MHz |
86000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
E-PHEMT |
1 |
450 mA |
COMPONENT |
4 |
DIE OR CHIP |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
81000 MHz |
86000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
21 dBm |
COMPONENT |
50 ohm |
85 Cel |
21.5 dB |
-55 Cel |
33000 MHz |
40000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
21 dBm |
COMPONENT |
50 ohm |
85 Cel |
21.5 dB |
-55 Cel |
33000 MHz |
40000 MHz |
|||||||||||||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
E-PHEMT |
1 |
20 dBm |
65 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
14.2 dB |
TIN |
e3 |
1000 MHz |
4000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
27 dBm |
7 |
440 mA |
COMPONENT |
3.5,10 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
0 MHz |
22000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
22000 MHz |
||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-55 Cel |
0 MHz |
22000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
25 dBm |
7 |
430 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
200 MHz |
22000 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
200 MHz |
22000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
0 MHz |
28000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
0 MHz |
30000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
0 MHz |
22000 MHz |
||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
1 |
25 dBm |
7 |
430 mA |
COMPONENT |
10 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
200 MHz |
22000 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
25 dBm |
7 |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
7500 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
25 dB |
-55 Cel |
27300 MHz |
33500 MHz |
||||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
25 dBm |
7 |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
e4 |
0 MHz |
7500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.