WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 174

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		23.5 dB		TIN	e3	1500 MHz	2700 MHz
ADMV7710CHIPS	Analog Devices	WIDE BAND MEDIUM POWER										COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			71000 MHz	76000 MHz
ADMV7810CHIPS	Analog Devices	WIDE BAND MEDIUM POWER										COMPONENT			50 ohm	85 Cel	18 dB	-55 Cel			81000 MHz	86000 MHz
HMC943APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER							20 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel			24000 MHz	34000 MHz
HMC943APM5E	Analog Devices	WIDE BAND MEDIUM POWER							20 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel			24000 MHz	34000 MHz
HMC1132PM5ETR	Analog Devices	WIDE BAND MEDIUM POWER							18 dBm	7		COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			27000 MHz	32000 MHz
HMC1132PM5E	Analog Devices	WIDE BAND MEDIUM POWER							18 dBm	7		COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			27000 MHz	32000 MHz
ADPA7001CHIPS	Analog Devices	WIDE BAND MEDIUM POWER				PHEMT		1	17 dBm		350 mA	COMPONENT	3.5	DIE OR CHIP	50 ohm	85 Cel	12 dB	-55 Cel			50000 MHz	95000 MHz
ADPA7002CHIP	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel			20000 MHz	44000 MHz
ADPA7005CHIP	Analog Devices	WIDE BAND MEDIUM POWER							27 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel			20000 MHz	44000 MHz
HMC863ALC4TR-R5	Analog Devices	WIDE BAND MEDIUM POWER							26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	e4	24000 MHz	29500 MHz
HMC863ALC4TR	Analog Devices	WIDE BAND MEDIUM POWER							26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	e4	24000 MHz	29500 MHz
ADPA7006CHIP	Analog Devices	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			18000 MHz	44000 MHz
ADPA9002ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm	7		COMPONENT			50 ohm	85 Cel	13.5 dB	-40 Cel			0 MHz	10000 MHz
ADPA9002ACGZN	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm	7		COMPONENT			50 ohm	85 Cel	13.5 dB	-40 Cel			0 MHz	10000 MHz
ADPA7005AEHZ	Analog Devices	WIDE BAND MEDIUM POWER							27 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-40 Cel			18000 MHz	44000 MHz
ADPA7002AEHZ	Analog Devices	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel			20000 MHz	44000 MHz
HMC1022A	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8		GAAS		1		1.08		COMPONENT	10	DIE OR CHIP	50 ohm		9.5 dB				0 MHz	48000 MHz
ADPA7007CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT		1	18 dBm		1400 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	18 dB	-55 Cel			18000 MHz	44000 MHz
ADPA7006AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS		1	20 dBm			COMPONENT	5		50 ohm	85 Cel	20 dB	-40 Cel			18000 MHz	44000 MHz
ADPA7006AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS		1	20 dBm			COMPONENT	5		50 ohm	85 Cel	20 dB	-40 Cel			18000 MHz	44000 MHz
ADPA7007AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS		1	27 dBm	1.29		COMPONENT	5		50 ohm	85 Cel	18.5 dB	-40 Cel			20000 MHz	44000 MHz
ADPA7007AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS		1	27 dBm	1.29		COMPONENT	5		50 ohm	85 Cel	18.5 dB	-40 Cel			20000 MHz	44000 MHz
ADL8104ACPZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	10 dB	-40 Cel			400 MHz	7500 MHz
ADL8104ACPZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT		1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	10 dB	-40 Cel			400 MHz	7500 MHz
MAAM-011290-DIE	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8				1	10 dBm	1.58	140 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	16.5 dB	-40 Cel			5000 MHz	20000 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm	125 Cel	30 dB				2300 MHz	4200 MHz
HMC8413LP2FETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6		PHEMT		1	25 dBm	1.29		COMPONENT	5	SOLCC6,.08,25	50 ohm	85 Cel	17 dB	-40 Cel			10 MHz	9000 MHz
HMC451-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	4		GAAS		1	10 dBm	1.38	150 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	15 dB	-55 Cel			5000 MHz	20000 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	115 Cel	33.8 dB	-40 Cel			2300 MHz	5000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.