| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
105 Cel |
13.2 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
30 MHz |
6000 MHz |
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|
|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
COMPONENT |
5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.5 dB |
-40 Cel |
Matte Tin (Sn) |
TAPE AND REEL |
e3 |
1700 MHz |
2400 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.5 dB |
-40 Cel |
MATTE TIN |
e3 |
400 MHz |
2700 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 |
COMPONENT |
3.5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2300 MHz |
2400 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.8 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
500 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
10 dBm |
52 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
14 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
MATTE TIN |
e3 |
1000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
20000 MHz |
44000 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
71000 MHz |
76000 MHz |
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|
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
18 dBm |
6 |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
31 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
2700 MHz |
3800 MHz |
||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
PHEMT |
1 |
17 dBm |
350 mA |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
50000 MHz |
95000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.6 dB |
-40 Cel |
10 MHz |
8000 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
22 |
GAAS |
1 |
25 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
20000 MHz |
44000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
125 Cel |
11 dB |
-55 Cel |
10 MHz |
10000 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
18000 MHz |
44000 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
25 dBm |
COMPONENT |
5 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||
|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3,5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
3100 MHz |
3900 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
1 |
25 dBm |
1.375 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
400 MHz |
11000 MHz |
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|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
1 |
25 dBm |
1.375 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
400 MHz |
11000 MHz |
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|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PHEMT |
1 |
18 dBm |
1.15 |
COMPONENT |
-0.4,3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
40000 MHz |
80000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PHEMT |
1 |
20 dBm |
1.17 |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
17.5 dB |
-55 Cel |
20000 MHz |
54000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
32 dBm |
1.43 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
25 MHz |
12000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
32 dBm |
1.43 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
25 MHz |
12000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
1.38 |
COMPONENT |
2 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
23000 MHz |
31000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PHEMT |
1 |
20 dBm |
1.38 |
COMPONENT |
2 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
23000 MHz |
31000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-55 Cel |
2000 MHz |
50000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
2000 MHz |
50000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
17 dB |
-55 Cel |
35000 MHz |
70000 MHz |
||||||||||||||||||
|
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
30 dBm |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
2700 MHz |
3800 MHz |
|||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
22 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
0 MHz |
40000 MHz |
||||||||||||||||
|
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
CERAMIC |
GAN |
1 |
34 dBm |
6 |
COMPONENT |
28 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
33 dBm |
6 |
100 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16.5 dB |
-40 Cel |
10 MHz |
1100 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-55 Cel |
500 MHz |
80000 MHz |
||||||||||||||||||
|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
0 MHz |
6000 MHz |
|||||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
40000 MHz |
|||||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
2000 MHz |
30000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
8 dBm |
6 |
4000 mA |
COMPONENT |
12,28 |
MODULE,6LEAD,2.9 |
50 ohm |
70 Cel |
58 dB |
-40 Cel |
2000 MHz |
6000 MHz |
||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PHEMT |
1 |
250 mA |
COMPONENT |
4 |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
71000 MHz |
76000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PHEMT |
1 |
250 mA |
COMPONENT |
4 |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
71000 MHz |
76000 MHz |
||||||||||||
|
|
Analog Devices |
WIDE BAND LOW POWER |
4 |
PHEMT |
1 |
23 dBm |
900 mA |
COMPONENT |
15 |
MODULE,4LEAD(UNSPEC) |
50 ohm |
75 Cel |
16 dB |
-40 Cel |
10 MHz |
20000 MHz |
|||||||||||
|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3,5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
3100 MHz |
3900 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.