Analog Devices RF & Microwave Amplifiers 165

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8325	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	22		PHEMT	1			50 mA	COMPONENT	3	DIE OR CHIP	50 ohm	85 Cel	19.5 dB	-55 Cel			71000 MHz	86000 MHz
HMC8205BF10	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL	e4	300 MHz	6000 MHz
HMC618ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	10 dBm		65 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	12.5 dB	-40 Cel	MATTE TIN	e3	1200 MHz	2200 MHz
HMC907APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		1	25 dBm	7	430 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel			200 MHz	22000 MHz
HMC1049-SX	Analog Devices	WIDE BAND LOW POWER						18 dBm			COMPONENT			50 ohm	85 Cel	11 dB	-55 Cel			300 MHz	20000 MHz
HMC565LC5TR-R5	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm	85 Cel	16 dB	-40 Cel			6000 MHz	20000 MHz
HMC637BPM5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS	1	25 dBm	7		COMPONENT	12	LCC32,.2SQ,20	50 ohm	85 Cel	12.5 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	e4	0 MHz	7500 MHz
HMC788ACPSZ-EP-PT	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	105 Cel	9 dB	-55 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	10000 MHz
HMC788ACPSZ-EP-R7	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	105 Cel	9 dB	-55 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	10000 MHz
HMC902-SX	Analog Devices	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm	85 Cel	17 dB	-55 Cel			5000 MHz	11000 MHz
HMC906A	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-55 Cel			27300 MHz	33500 MHz
HMC1126-SX	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	8 dB	-55 Cel			2000 MHz	50000 MHz
HMC564LC4TR-R5	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	14 dB	-40 Cel			7000 MHz	14000 MHz
HMC606LC5TR-R5	Analog Devices	WIDE BAND LOW POWER						15 dBm			COMPONENT			50 ohm	85 Cel	9.5 dB	-40 Cel			2000 MHz	18000 MHz
HMC903-SX	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	17 dB	-55 Cel			6000 MHz	18000 MHz
HMC637BPM5ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS	1	25 dBm	7		COMPONENT	12	LCC32,.2SQ,20	50 ohm	85 Cel	12.5 dB	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	e4	0 MHz	7500 MHz
HMC1040CHIPS	Analog Devices	WIDE BAND LOW POWER						5 dBm			COMPONENT			50 ohm	85 Cel	19 dB	-55 Cel			20000 MHz	44000 MHz
ADMV7710CHIPS	Analog Devices	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			71000 MHz	76000 MHz
ADMV7810CHIPS	Analog Devices	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm	85 Cel	18 dB	-55 Cel			81000 MHz	86000 MHz
HMC1099PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC1099PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	16.5 dB	-40 Cel			10 MHz	1100 MHz
HMC8500PM5ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	2800 MHz
HMC8500PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	33 dBm	6	100 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	12 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	10 MHz	2800 MHz
HMC943APM5ETR	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel			24000 MHz	34000 MHz
HMC943APM5E	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel			24000 MHz	34000 MHz
HMC1132PM5ETR	Analog Devices	WIDE BAND MEDIUM POWER						18 dBm	7		COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			27000 MHz	32000 MHz
HMC1132PM5E	Analog Devices	WIDE BAND MEDIUM POWER						18 dBm	7		COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			27000 MHz	32000 MHz
HMC8415LP6GETR	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm	85 Cel	25.5 dB	-40 Cel	MATTE TIN	e3	9000 MHz	10500 MHz
HMC8415LP6GE	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm	85 Cel	25.5 dB	-40 Cel	MATTE TIN	e3	9000 MHz	10500 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD	e4	2700 MHz	3800 MHz
ADPA7001CHIPS	Analog Devices	WIDE BAND MEDIUM POWER				PHEMT	1	17 dBm		350 mA	COMPONENT	3.5	DIE OR CHIP	50 ohm	85 Cel	12 dB	-55 Cel			50000 MHz	95000 MHz
HMC8205BCHIPS	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm	85 Cel	24.5 dB	-55 Cel			400 MHz	6000 MHz
ADPA7002CHIP	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel			20000 MHz	44000 MHz
ADPA7005CHIP	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel			20000 MHz	44000 MHz
HMC1049SCPZ-EP-R7	Analog Devices	WIDE BAND LOW POWER						18 dBm			COMPONENT			50 ohm	105 Cel	10 dB	-55 Cel			300 MHz	20000 MHz
HMC1022A-SX	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel			0 MHz	48000 MHz
HMC1022ACHIPS	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel			0 MHz	48000 MHz
HMC863ALC4TR-R5	Analog Devices	WIDE BAND MEDIUM POWER						26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	e4	24000 MHz	29500 MHz
HMC863ALC4TR	Analog Devices	WIDE BAND MEDIUM POWER						26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	e4	24000 MHz	29500 MHz
ADL8111ACCZN	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	10.6 dB	-40 Cel			10 MHz	8000 MHz
HMC8411TCPZ-EP-PT	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	125 Cel	11 dB	-55 Cel			10 MHz	10000 MHz
ADPA7006CHIP	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel			18000 MHz	44000 MHz
HMC441LC3BTR-R5	Analog Devices	WIDE BAND LOW POWER						15 dBm			COMPONENT			50 ohm	85 Cel	10 dB	-40 Cel	GOLD OVER NICKEL	e4	6000 MHz	18000 MHz
ADPA9002ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm	7		COMPONENT			50 ohm	85 Cel	13.5 dB	-40 Cel			0 MHz	10000 MHz
ADPA9002ACGZN	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm	7		COMPONENT			50 ohm	85 Cel	13.5 dB	-40 Cel			0 MHz	10000 MHz
ADPA7005AEHZ	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-40 Cel			18000 MHz	44000 MHz
ADPA7002AEHZ	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel			20000 MHz	44000 MHz
ADCA3992AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	8		HYBRID	1			550 mA	MODULE	34	SOT-115J	75 ohm	85 Cel	26.7 dB	-30 Cel			45 MHz	1218 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.