SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 492

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGWA15S120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

259 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

584 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

31.2 ns

STGWA25S120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

593 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

43 ns

STGWA40S120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

158.46 ns

3

FLANGE MOUNT

SILICON

1200 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

50 ns

NGTB20N120IHWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

395 ns

3

FLANGE MOUNT

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

STGB30M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

258 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

GULL WING

RECTANGULAR

1

310 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

47 ns

STGB7H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

14 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

263 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6.9 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

42.8 ns

STGWA30M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

258 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

47 ns

STGWA80H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

470 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

358 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

128 ns

NGTB30N135IHR1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

394 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

443 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

STGWA25H120DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

339 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

41 ns

STGB5H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

10 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

280 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

6.9 V

SINGLE

R-PSSO-G2

COLLECTOR

BULK: 1000

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

STGB30H60DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

223 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGW30M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

258 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

47 ns

NGTB60N65FL2WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

278 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

168 ns

NGTB25N120FL3WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

50 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

282 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

36 ns

STGWA20M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

252 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

39.6 ns

STGWA40H65DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

52 ns

NGTB75N65FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

262 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

78 ns

STGF10M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

27 ns

STGW80H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

470 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

448 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

104 ns

NGTB40N120FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

360 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

65 ns

NGTB50N65S1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AD

e3

118 ns

RGTH40TK65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

141 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

47 ns

STGWA60V60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

243 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

80 ns

STGB4M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

8 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

296 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

19.6 ns

STGW75M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

STGWA50M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

315 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

66 ns

STGWA75M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

468 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

292 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

73 ns

NGTB40N120S3WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

STGWA30H60DFB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

51.1 ns

STGWA8M120DF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

356 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

28.8 ns

IRGIB4630DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

206 W

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

65 ns

FGH75T65SQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

352 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T4

RC-IGBT

TO-247

e3

80 ns

STGB3HF60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

7.5 A

PLASTIC/EPOXY

POWER CONTROL

2.95 V

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.75 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

15 ns

STGF3HF60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

18 W

7.5 A

PLASTIC/EPOXY

POWER CONTROL

2.95 V

THROUGH-HOLE

RECTANGULAR

1

140 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.75 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

15 ns

STGWT20HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

168 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

159 ns

STGW40H65DFB-4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

209 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

54.8 ns

STGWT30HP65FB

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

169 ns

RGTH60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

58 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

179 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

67 ns

STGB30H60DLLFBAG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

260 W

60 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2.15 V

GULL WING

RECTANGULAR

1

370 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-55 Cel

20 V

2.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FGH40T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FD1200R17HP4KB2BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

1800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

900 ns

UL APPROVED

FD800R17HP4KB2BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5200 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

2000 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

670 ns

UL APPROVED

RGT50TM65DGC9

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

65 ns

RGTV60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

45 ns

BSM400GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

210 ns

IHW40N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

321 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

59 ns

IKU10N60RXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

IN-LINE

175 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-251

24 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.