SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 492

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKW75N65EL5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

474 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

IKZ50N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

366 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

60 ns

IHW20N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

38 ns

IHW30N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

44 ns

IHW50N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

261 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

51 ns

IKP20N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

211 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

32 ns

IKP20N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

218 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IKP30N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

206 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IKP30N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

224 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IKW30N65NL5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

514 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

76 ns

IKW30N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

62 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

30 ns

IKW30N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

429 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

49 ns

IKW40N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

510 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

63 ns

IKW50N65ES5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

274 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

198 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

45 ns

IKW50N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

507 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

62 ns

IKQ100N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

IKW50N65EH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

54 ns

IKZ75N65EL5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

474 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

133 ns

IKD06N60RAATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

GENERAL PURPOSE

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252

NOT SPECIFIED

NOT SPECIFIED

22 ns

AEC-Q101

IKD06N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

149 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

17 ns

AEC-Q101

IKD10N60RAATMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

GENERAL PURPOSE

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252

NOT SPECIFIED

NOT SPECIFIED

24 ns

AEC-Q101

IKD10N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

198 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

27 ns

AEC-Q101

IGW40N65F5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

74 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

30 ns

AEC-Q101

IKD03N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

18 ns

AEC-Q101

IKD04N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

216 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

18 ns

AEC-Q101

IKB20N60TAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

GULL WING

RECTANGULAR

1

287 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

35 ns

AEC-Q101

IKP20N60TAHKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

287 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

35 ns

AEC-Q101

IKW20N60TAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

36 ns

AEC-Q101

IKW75N60TAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

69 ns

AEC-Q101

IKQ100N60TAXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

83 ns

AEC-Q101

IKQ120N60TAXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

833 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

398 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

84 ns

AEC-Q101

IKW30N60TAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

50 ns

AEC-Q101

IKW40N65F5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

74 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

30 ns

AEC-Q101

IKW40N65H5AXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

204 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

IGZ75N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

119 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

37 ns

IKZ75N65EH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

37 ns

IKZ75N65NH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

4

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

71 ns

FZ400R12KS4PHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

510 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

FD200R12KE3PHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

UL RECOGNIZED

IKW40N60DTPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

67 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

49 ns

IKW50N60DTPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

332 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

55 ns

IGW40N60TPXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

67 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

49 ns

IHW20N135R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IHW25N120E1XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1677 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IKQ75N120CT2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

372 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

86 ns

IRG4PC50FD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

660 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

ULTRA FAST SOFT RECOVERY

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

86 ns

IKQ40N120CT2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

74 ns

IKQ50N120CH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

466 ns

3

FLANGE MOUNT

SILICON

1200 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

68 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.