N-Channel Insulated Gate Bipolar Transistors (IGBT) 53

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

DF80R12W2H3_B11

Infineon Technologies

N-Channel

COMPLEX

NO

190 W

50 A

UNSPECIFIED

POWER CONTROL

1.7 V

UNSPECIFIED

RECTANGULAR

2

600 ns

22

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

49 ns

DF1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

830 ns

FD1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel

6250 W

1390 A

2.45 V

1910 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

830 ns

IKD15N60RAATMA1

Infineon Technologies

N-Channel

250 W

30 A

2.1 V

430 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

NOT SPECIFIED

NOT SPECIFIED

26 ns

SGP30N60XKSA1

Infineon Technologies

N-Channel

60 A

419 ns

150 Cel

SILICON

600 V

-55 Cel

20 V

5 V

NOT SPECIFIED

NOT SPECIFIED

93 ns

DF75R12W1H4FB11BOMA1

Infineon Technologies

N-Channel

230 W

50 A

2.65 V

500 ns

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

58 ns

FD600R17KF6CB2NOSA1

Infineon Technologies

N-Channel

4800 W

975 A

3.1 V

1220 ns

SILICON

1700 V

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

470 ns

FF800R17KF6CB2NOSA1

Infineon Technologies

N-Channel

6250 W

1300 A

3.1 V

1240 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

540 ns

FD1000R33HE3KBOSA1

Infineon Technologies

N-Channel

9600 W

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-50 Cel

20 V

6.4 V

ISOLATED

1150 ns

FD401R17KF6CB2NOSA1

Infineon Technologies

N-Channel

3150 W

650 A

3.1 V

1210 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

550 ns

FZ1600R17KF6CB2NOSA1

Infineon Technologies

N-Channel

12500 W

2600 A

3.1 V

1360 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

490 ns

FZ800R17KF6CB2NOSA1

Infineon Technologies

N-Channel

6600 W

1300 A

3.1 V

1220 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

440 ns

FZ1200R17KE3B2NOSA1

Infineon Technologies

N-Channel

8950 W

1900 A

2.45 V

1900 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

FZ1200R17KF6CB2NOSA1

Infineon Technologies

N-Channel

9600 W

1950 A

3.1 V

1240 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

460 ns

FZ2400R17HE4B9NPSA1

Infineon Technologies

N-Channel

15500 W

2.3 V

2100 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

760 ns

FD-DF80R12W1H3_B52

Infineon Technologies

N-Channel

215 W

2.4 V

320 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

ISOLATED

43 ns

FS215R04A1E3DBOMA1

Infineon Technologies

N-Channel

715 W

290 A

1.7 V

340 ns

150 Cel

SILICON

400 V

-40 Cel

20 V

6.5 V

ISOLATED

150 ns

FS400R07A1E3H5BPSA1

Infineon Technologies

N-Channel

750 W

500 A

1.9 V

580 ns

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

ISOLATED

200 ns

FS600R07A2E3B31BOSA1

Infineon Technologies

N-Channel

1300 W

530 A

1.5 V

540 ns

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

ISOLATED

190 ns

FS800R07A2E3B31BOSA1

Infineon Technologies

N-Channel

1550 W

700 A

1.5 V

620 ns

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

ISOLATED

230 ns

FZ1600R17HP4B2BOSA2

Infineon Technologies

N-Channel

10500 W

2.25 V

1710 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

1

ISOLATED

805 ns

FZ1800R17HP4B29BOSA2

Infineon Technologies

N-Channel

11500 W

2.25 V

1860 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

1

ISOLATED

880 ns

FZ3600R17HP4B2BOSA2

Infineon Technologies

N-Channel

19500 W

2.25 V

2095 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

1

ISOLATED

945 ns

2PS12017E44G35911NOSA1

Infineon Technologies

N-Channel

6250 W

1700 A

2.2 V

2380 ns

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1060 ns

F575R06KE3B5BOSA1

Infineon Technologies

N-Channel

COMPLEX

NO

250 W

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

2

270 ns

35

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X35

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRGIB4640DPBF

Infineon Technologies

N-Channel

65 A

1.9 V

119 ns

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

64 ns

FF400R07A01E3S6XKSA2

Infineon Technologies

N-Channel

1500 W

800 A

6.5 V

530 ns

150 Cel

SILICON

700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

140 ns

FS200R07A5E3S6BPSA1

Infineon Technologies

N-Channel

630 W

6.5 V

440 ns

150 Cel

SILICON

705 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

200 ns

FD1000R33HE3KB60BPSA1

Infineon Technologies

N-Channel

11500 W

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

FD1000R33HL3KB60BPSA1

Infineon Technologies

N-Channel

11500 W

2.85 V

4700 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1050 ns

FZ1000R33HE3B60BPSA1

Infineon Technologies

N-Channel

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

FZ1500R33HE3B60BPSA1

Infineon Technologies

N-Channel

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

FZ1500R33HL3B60BPSA1

Infineon Technologies

N-Channel

17000 W

2.85 V

4700 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1050 ns

IGA03N120H2XKSA1

Infineon Technologies

N-Channel

310 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

3.9 V

TIN

e3

14.4 ns

FF1800R12IE5PBPSA1

Infineon Technologies

N-Channel

2.15 V

800 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

510 ns

FS200R07A02E3S6BKSA2

Infineon Technologies

N-Channel

694 W

400 A

6.5 V

570 ns

150 Cel

SILICON

700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

FS400R07A3E3H6BPSA1

Infineon Technologies

N-Channel

811 W

5001 A

6.5 V

430 ns

150 Cel

SILICON

705 V

-40 Cel

20 V

6.5 V

1

ISOLATED

200 ns

FS45MR12W1M1B11BOMA1

Infineon Technologies

N-Channel

5.55 V

55300 ns

150 Cel

SILICON

-40 Cel

20 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

14100 ns

FS900R08A2P2B31BOSA1

Infineon Technologies

N-Channel

1546 W

6.5 V

820 ns

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

500 ns

FS900R08A2P2B32BOSA1

Infineon Technologies

N-Channel

1546 W

6.5 V

820 ns

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

500 ns

IFF450B12ME4S8PB11BPSA1

Infineon Technologies

N-Channel

2.1 V

690 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

IFF600B12ME4S8PB11BOSA1

Infineon Technologies

N-Channel

2.1 V

750 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

IKFW50N60ETXKSA1

Infineon Technologies

N-Channel

164 W

73 A

2 V

378 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

ISOLATED

e3

62 ns

IKFW75N60ETXKSA1

Infineon Technologies

N-Channel

178 W

80 A

2 V

417 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

ISOLATED

e3

79 ns

IKW15N120BH6XKSA1

Infineon Technologies

N-Channel

200 W

30 A

2.3 V

373 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

e3

46 ns

2LS20017E42W36702NOSA1

Infineon Technologies

N-Channel

150 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

6MS16017P43W40382NOSA1

Infineon Technologies

N-Channel

125 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

6MS16017P43W40383NOSA1

Infineon Technologies

N-Channel

125 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.