Infineon Technologies Insulated Gate Bipolar Transistors (IGBT) 1,063

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FD1000R33HE3KB60BPSA1

Infineon Technologies

N-Channel

11500 W

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

FD1000R33HL3KB60BPSA1

Infineon Technologies

N-Channel

11500 W

2.85 V

4700 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1050 ns

FZ1000R33HE3B60BPSA1

Infineon Technologies

N-Channel

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

FZ1500R33HE3B60BPSA1

Infineon Technologies

N-Channel

3.1 V

3550 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1150 ns

FZ1500R33HL3B60BPSA1

Infineon Technologies

N-Channel

17000 W

2.85 V

4700 ns

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

ISOLATED

1050 ns

IGA03N120H2XKSA1

Infineon Technologies

N-Channel

310 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

3.9 V

TIN

e3

14.4 ns

IGC41T120T8QX7SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.42 V

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N2

NOT SPECIFIED

NOT SPECIFIED

IGC50T120T8RLX7SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

3

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N3

NOT SPECIFIED

NOT SPECIFIED

DF1000R17IE4PBPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF100R07W1H5FPB54BPSA2

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

40 A

UNSPECIFIED

1.55 V

UNSPECIFIED

RECTANGULAR

2

30 ns

14

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

12.6 ns

IEC-61140

DF80R07W1H5FPB11BPSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

20 A

UNSPECIFIED

POWER CONTROL

1.72 V

UNSPECIFIED

RECTANGULAR

2

124 ns

18

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

4.75 V

UPPER

R-XUFM-X18

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

17 ns

F3L200R12N2H3B47BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

4

520 ns

23

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

253 ns

FF1500R17IP5PBPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1500 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

UNSPECIFIED

RECTANGULAR

2

970 ns

14

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.25 V

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

FF1800R12IE5PBPSA1

Infineon Technologies

N-Channel

2.15 V

800 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

510 ns

FF400R12KT4PBOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

2

640 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

205 ns

FF450R33T3E3B5BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 A

PLASTIC/EPOXY

POWER CONTROL

2.75 V

UNSPECIFIED

RECTANGULAR

2

2190 ns

10

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X10

1

ISOLATED

710 ns

FF450R33T3E3BPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

450 A

PLASTIC/EPOXY

POWER CONTROL

2.75 V

UNSPECIFIED

RECTANGULAR

2

2190 ns

10

FLANGE MOUNT

150 Cel

SILICON

3300 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

710 ns

FP10R12W1T7B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

10 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

1005 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

45 ns

FP25R12W1T7B11BPSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

25 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

7

730 ns

23

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X23

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

65 ns

FS100R12N2T4BPSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

6

490 ns

25

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X25

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

185 ns

FS100R12W2T7B11BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

70 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

655 ns

33

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

UPPER

R-XUFM-X33

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

221 ns

FS200R07A02E3S6BKSA2

Infineon Technologies

N-Channel

694 W

400 A

6.5 V

570 ns

150 Cel

SILICON

700 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

220 ns

FS400R07A1E3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1250 W

500 A

UNSPECIFIED

POWER CONTROL

1.9 V

UNSPECIFIED

RECTANGULAR

6

580 ns

23

FLANGE MOUNT

150 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X23

1

ISOLATED

200 ns

FS400R07A3E3H6BPSA1

Infineon Technologies

N-Channel

811 W

5001 A

6.5 V

430 ns

150 Cel

SILICON

705 V

-40 Cel

20 V

6.5 V

1

ISOLATED

200 ns

FS45MR12W1M1B11BOMA1

Infineon Technologies

N-Channel

5.55 V

55300 ns

150 Cel

SILICON

-40 Cel

20 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

14100 ns

FS900R08A2P2B31BOSA1

Infineon Technologies

N-Channel

1546 W

6.5 V

820 ns

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

500 ns

FS900R08A2P2B32BOSA1

Infineon Technologies

N-Channel

1546 W

6.5 V

820 ns

150 Cel

SILICON

750 V

-40 Cel

20 V

6.5 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

500 ns

IFF450B12ME4S8PB11BPSA1

Infineon Technologies

N-Channel

2.1 V

690 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

IFF600B12ME4S8PB11BOSA1

Infineon Technologies

N-Channel

2.1 V

750 ns

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

250 ns

IHW40N135R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

394 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IKFW50N60ETXKSA1

Infineon Technologies

N-Channel

164 W

73 A

2 V

378 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

ISOLATED

e3

62 ns

IKFW75N60ETXKSA1

Infineon Technologies

N-Channel

178 W

80 A

2 V

417 ns

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

ISOLATED

e3

79 ns

IKW15N120BH6XKSA1

Infineon Technologies

N-Channel

200 W

30 A

2.3 V

373 ns

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

e3

46 ns

IKY75N120CS6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

331 ns

4

IN-LINE

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSIP-T4

e3

64 ns

2LS20017E42W36702NOSA1

Infineon Technologies

N-Channel

150 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

2PS06017E32G28213NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

4

MICROELECTRONIC ASSEMBLY

SILICON

UNSPECIFIED

R-XXMA-X

ISOLATED

2PS13512E43W35222NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

2PS18012E44G38553NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1200 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

2PS18012E44G40113NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

8

MICROELECTRONIC ASSEMBLY

60 Cel

SILICON

1200 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS10017E41W36460BOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS16017P43W40382NOSA1

Infineon Technologies

N-Channel

125 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

6MS16017P43W40383NOSA1

Infineon Technologies

N-Channel

125 Cel

SILICON

1700 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W39872NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W39873NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS24017P43W41646NOSA1

Infineon Technologies

N-Channel

COMPLEX

YES

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

12

MICROELECTRONIC ASSEMBLY

55 Cel

SILICON

1700 V

-25 Cel

UNSPECIFIED

R-XXMA-X

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W34404NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6MS30017E43W40372NOSA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

18

MICROELECTRONIC ASSEMBLY

150 Cel

SILICON

1700 V

UNSPECIFIED

R-XXMA-X

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

6PS18012E4FG38393NWSA1

Infineon Technologies

N-Channel

150 Cel

SILICON

1200 V

-25 Cel

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.