Onsemi Insulated Gate Bipolar Transistors (IGBT) 185

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
TIG066SS-TL-E	Onsemi	N-CHANNEL		YES													Insulated Gate BIP Transistors	150 Cel		400 V	6 V	1 V	Tin/Bismuth (Sn/Bi)			1					e6
TIG052TS-TL-E	Onsemi	N-CHANNEL		YES													Insulated Gate BIP Transistors	150 Cel		400 V	6 V	1 V	Tin/Bismuth (Sn/Bi)			1					e6
NGTB15N135IHRWG	Onsemi	N-CHANNEL		NO	357 W	30 A											Insulated Gate BIP Transistors	175 Cel		1350 V	20 V	6.5 V	Matte Tin (Sn) - annealed								e3
NGTB15N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	156 W	30 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTB15N60S1EG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	117 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			93 ns
NGTB20N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	40 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTB20N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		485 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			110 ns
NGTB25N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTB25N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	192 W	50 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		475 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			117 ns
NGTG15N60S1EG	Onsemi	N-CHANNEL	SINGLE	NO	117 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			93 ns
NGTB15N60EG	Onsemi	N-CHANNEL		NO	117 W	30 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	TIN								e3
NGTB15N120FLWG	Onsemi	N-CHANNEL		NO	156 W	30 A											Insulated Gate BIP Transistors	150 Cel		1200 V	20 V	6.5 V	TIN								e3
NGTB20N120IHSWG	Onsemi	N-CHANNEL		NO	156 W	40 A											Insulated Gate BIP Transistors	150 Cel		1200 V	20 V	6.5 V	TIN								e3
NGTB25N120FLWG	Onsemi	N-CHANNEL		NO	192 W	50 A											Insulated Gate BIP Transistors	150 Cel		1200 V	20 V	6.5 V	TIN								e3
NGTB30N120IHLWG	Onsemi	N-CHANNEL		NO	260 W	60 A											Insulated Gate BIP Transistors	150 Cel		1200 V	20 V	6.5 V	TIN								e3
NGTB30N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	560 W	60 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		596 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			167 ns
NGTB40N120FLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		630 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			172 ns
NGTB40N120IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		565 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3
NGTB40N120LWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	260 W	80 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		565 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V	20 V	6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			178 ns
NGTB40N60IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT			SILICON	600 V			TIN	SINGLE	R-PSFM-T3					TO-247	e3			110 ns
NGTB50N60FLWG	Onsemi	N-CHANNEL		NO	223 W	100 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	Tin (Sn)								e3
NGTG30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	Tin (Sn)								e3
NGTB30N60FLWG	Onsemi	N-CHANNEL		NO	250 W	60 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	TIN								e3
NGTB50N60FWG	Onsemi	N-CHANNEL		NO	223 W	100 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	TIN								e3
NGTG30N60FWG	Onsemi	N-CHANNEL		NO	167 W	60 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	Tin (Sn)								e3
NGTB20N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	40 A											Insulated Gate BIP Transistors	175 Cel		1200 V	20 V	6.5 V	Matte Tin (Sn) - annealed								e3
TIG056BF-1E	Onsemi	N-CHANNEL		NO	30 W												Insulated Gate BIP Transistors	150 Cel		430 V	33 V	5 V	MATTE TIN								e3
NGTB30N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	60 A											Insulated Gate BIP Transistors	175 Cel		1200 V	20 V	6.5 V	Tin (Sn)								e3
NGTB40N120IHRWG	Onsemi	N-CHANNEL		NO	384 W	80 A											Insulated Gate BIP Transistors	175 Cel		1200 V	20 V	6.5 V	MATTE TIN								e3
NGTB40N60FLWG	Onsemi	N-CHANNEL		NO	257 W	80 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	Tin (Sn)								e3
NGTB40N120FL2WG	Onsemi	N-CHANNEL		NO	535 W	80 A											Insulated Gate BIP Transistors	175 Cel		1200 V	20 V	6.5 V	MATTE TIN								e3
NGTB50N120FL2WG	Onsemi	N-CHANNEL		NO	535 W	100 A											Insulated Gate BIP Transistors	175 Cel		1200 V	20 V	6.5 V	MATTE TIN								e3
NGTB50N60FL2WG	Onsemi	N-CHANNEL		NO	417 W	100 A											Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	Tin (Sn)								e3
NGTB30N60L2WG	Onsemi	N-CHANNEL		NO	225 W	100 A											Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	MATTE TIN								e3
NGTB45N60SWG	Onsemi	N-CHANNEL		NO	250 W	90 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	MATTE TIN								e3
MGB15N40CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		GULL WING	RECTANGULAR	1		20500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	22 V	2.1 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	VOLTAGE CLAMPING		e0	30	235	6000 ns
NGTB50N65FL2WG	Onsemi	N-CHANNEL		NO	417 W	100 A											Insulated Gate BIP Transistors	175 Cel		650 V	20 V	6.5 V	MATTE TIN								e3
NGTB15N120FL2WG	Onsemi	N-CHANNEL		NO	294 W	30 A											Insulated Gate BIP Transistors	175 Cel		1200 V	20 V	6.5 V	MATTE TIN								e3
NGB8206N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	8000 ns	GULL WING	RECTANGULAR	1	14000 ns	18500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	390 V	15 V	2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	6500 ns
NGB8206NTF4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		GULL WING	RECTANGULAR	1		18500 ns	2	SMALL OUTLINE			SILICON	390 V			Tin/Lead (Sn80Pb20)	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0			6500 ns
NGTB30N65IHL2WG	Onsemi	N-CHANNEL		NO	300 W	60 A											Insulated Gate BIP Transistors	175 Cel		650 V	20 V	6.5 V	Matte Tin (Sn) - annealed								e3
NGTB35N60FL2WG	Onsemi	N-CHANNEL		YES	300 W	70 A											Insulated Gate BIP Transistors	175 Cel		600 V	20 V	6.5 V	Matte Tin (Sn) - annealed								e3
NGTB35N65FL2WG	Onsemi	N-CHANNEL		NO	300 W	70 A											Insulated Gate BIP Transistors	175 Cel		650 V	20 V	6.5 V	MATTE TIN								e3
NGTB60N60SWG	Onsemi	N-CHANNEL		NO	298 W	120 A											Insulated Gate BIP Transistors	150 Cel		600 V	20 V	6.5 V	TIN								e3
NGTB30N60SWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	189 W	60 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		285 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	6.5 V	Tin (Sn)	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			90 ns
NGB15N41CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	15 V	2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5700 ns
NGD15N41CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	GULL WING	RECTANGULAR	1	15000 ns	15500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	15 V	2.1 V	TIN LEAD	SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified			e0		235	5700 ns
NGP15N41CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	107 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	THROUGH-HOLE	RECTANGULAR	1	15000 ns	15500 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	440 V	15 V	2.1 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0		235	5700 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.