Onsemi Insulated Gate Bipolar Transistors (IGBT) 185

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
NXH40T120L3Q1PG	Onsemi	N-CHANNEL	COMPLEX	NO	146 W	42 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	12		305 ns	44	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X44		ISOLATED				NOT SPECIFIED	NOT SPECIFIED	83 ns
NXH40T120L3Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	146 W	42 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	12		305 ns	44	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X44		ISOLATED				NOT SPECIFIED	NOT SPECIFIED	83 ns
NVH820S75L4SPB	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	1000 W	820 A	UNSPECIFIED	POWER CONTROL		1.55 V	UNSPECIFIED	RECTANGULAR	6		1354 ns	33	FLANGE MOUNT	175 Cel	SILICON	750 V		-40 Cel	20 V		6.6 V	Matte Tin (Sn) - annealed	UPPER	R-XUFM-X33		ISOLATED			e3			454 ns
FGD2736G3-F085V	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR	YES	150 W	37.5 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	7000 ns	1.65 V	GULL WING	RECTANGULAR	1	15000 ns	6300 ns	2	SMALL OUTLINE	175 Cel	SILICON	330 V	11000 ns	-40 Cel	10 V	30000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1				e3	30	260	3900 ns	AEC-Q101
FGD3N60LSDTM-T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	40 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL		1.5 V	GULL WING	RECTANGULAR	1		1420 ns	2	SMALL OUTLINE	150 Cel	SILICON	600 V		-55 Cel	25 V		5 V		SINGLE	R-PSSO-G2		COLLECTOR	LOW CONDUCTION LOSS	TO-252AA				85 ns
FGY75T95LQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	453 W	150 A	PLASTIC/EPOXY	POWER CONTROL		1.69 V	THROUGH-HOLE	RECTANGULAR	1		666 ns	3	FLANGE MOUNT	175 Cel	SILICON	950 V		-55 Cel	20 V		6.4 V		SINGLE	R-PSFM-T3			FAST SWITCHING	TO-247				102 ns
FGY75T95SQDT	Onsemi	N-CHANNEL	SINGLE	NO	434 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.11 V	THROUGH-HOLE	RECTANGULAR	1		198.8 ns	3	FLANGE MOUNT	175 Cel	SILICON	950 V		-55 Cel	20 V		6.4 V		SINGLE	R-PSFM-T3			RC-IGBT	TO-247				89.6 ns
HGTP7N60A4-F102	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT	150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR	LOW CONDUCTION LOSS	TO-220AB				17 ns
ISL9V2040D3STV	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	130 W	10 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION		1.9 V	GULL WING	RECTANGULAR	1		6000 ns	2	SMALL OUTLINE	175 Cel	SILICON	390 V		-40 Cel	12 V		2.2 V		SINGLE	R-PSSO-G2		COLLECTOR		TO-252AA		NOT SPECIFIED	NOT SPECIFIED	2780 ns
AFGHL50T65SQ	Onsemi	N-CHANNEL	SINGLE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR		TO-247	e3	NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
FGHL50T65SQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		159 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3			RC-IGBT	TO-247	e3			40.4 ns
AFGB30T65SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	220 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1		78.7 ns	2	SMALL OUTLINE	175 Cel	SILICON	650 V		-55 Cel	30 V		6 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263	e3	30	260	33.6 ns	AEC-Q101
FGAF40S65AQ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	94 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.1 V	THROUGH-HOLE	RECTANGULAR	1		90.8 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		ISOLATED			e3	NOT SPECIFIED	NOT SPECIFIED	30.3 ns
NXH160T120L2Q1SG	Onsemi	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR	NO	280 W	140 A	UNSPECIFIED	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	4			30	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.9 V		UPPER	R-XUFM-X30		ISOLATED				NOT SPECIFIED	NOT SPECIFIED
FGH60T65SQD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	120 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		126.2 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR	RC-IGBT	TO-247AB	e3			36.8 ns
FGH40T120SQDNL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	454 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.95 V	THROUGH-HOLE	RECTANGULAR	1		372 ns	4	FLANGE MOUNT	175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T4				TO-247				80 ns
SNXH100M95H3Q2F2PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	457 W	263 A	UNSPECIFIED	POWER CONTROL	77 ns	2.25 V	UNSPECIFIED	RECTANGULAR	6	264 ns	1665 ns	40	FLANGE MOUNT	150 Cel	SILICON	950 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X40		ISOLATED				NOT SPECIFIED	NOT SPECIFIED	306 ns
FPF2G75FH07BP	Onsemi	N-CHANNEL	COMPLEX	NO	236 W	75 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	6		462 ns	32	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	25 V		6.8 V		UPPER	R-XUFM-X32			LOW CONDUCTION LOSS					124 ns
NXH35C120L2C2S1G	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		35 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		485 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED						240 ns
NXH450B100H4Q2F2PG	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	234 W	101 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		224 ns	56	FLANGE MOUNT	150 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X56		ISOLATED						42 ns
NXH450B100H4Q2F2SG	Onsemi	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	234 W	101 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		224 ns	56	FLANGE MOUNT	150 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X56		ISOLATED						42 ns
NXH350N100H4Q2F2SG	Onsemi	N-CHANNEL	2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	592 W	329 A	UNSPECIFIED	POWER CONTROL		1.8 V	UNSPECIFIED	RECTANGULAR	2		572.5 ns	42	FLANGE MOUNT	125 Cel	SILICON	1000 V		-40 Cel	20 V		5.7 V		UPPER	R-XUFM-X42		ISOLATED						114 ns
NXH200T120H3Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	679 W	256 A	UNSPECIFIED	POWER CONTROL	102 ns	2.3 V	UNSPECIFIED	RECTANGULAR	4	99 ns	1096 ns	56	FLANGE MOUNT	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X56		ISOLATED						373 ns
NXH35C120L2C2ESG	Onsemi	N-CHANNEL	COMPLEX	NO		35 A	UNSPECIFIED	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	6		485 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-XDIP-T26								240 ns
NXH50C120L2C2ESG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		50 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		616 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED						248 ns
NCG225L75NF8M1	Onsemi	N-CHANNEL	SINGLE	YES			UNSPECIFIED	MOTOR CONTROL		1.75 V	NO LEAD	SQUARE	1		424 ns	2	UNCASED CHIP	175 Cel	SILICON	750 V		-40 Cel	20 V		7.2 V		UPPER	S-XUUC-N2								468 ns	AEC-Q101
NXH100T120L3Q0S1NG	Onsemi	N-CHANNEL	COMPLEX	NO	328 W	100 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	4		412 ns	20	FLANGE MOUNT	175 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		UPPER	R-XUFM-X20								93 ns
NXH25C120L2C2SG	Onsemi	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO		25 A	PLASTIC/EPOXY	MOTOR CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	7		320 ns	26	IN-LINE	150 Cel	SILICON	1200 V		-40 Cel	20 V		6.8 V		DUAL	R-PDIP-T26		ISOLATED						128 ns
SNXH75M65L3F2STG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	236 W	75 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.2 V	PIN/PEG	RECTANGULAR	1		432 ns	32	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	25 V		6.8 V		UPPER	R-PUFM-P32		ISOLATED	LOW SWITCHING LOSSES					129 ns
FGH75T65UPD-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL	56 ns	2.3 V	THROUGH-HOLE	RECTANGULAR	1	33 ns	197 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	98 ns	-55 Cel	20 V	249 ns	7.5 V		SINGLE	R-PSFM-T3			RC-IGBT	TO-247				87 ns
AFGY160T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3				TO-247					AEC-Q101
NXH450N65L4Q2F2SG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	40	FLANGE MOUNT	125 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X40		ISOLATED						192 ns
NXH450N65L4Q2F2PG	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	633 W	280 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	2		978 ns	36	FLANGE MOUNT	125 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X36		ISOLATED						192 ns
NXH50M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	86 W	48 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		130 ns	27	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X27		ISOLATED						39 ns
AFGY120T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.2 V		SINGLE	R-PSFM-T3			RC-IGBT	TO-247				183 ns	AEC-Q101
NXH300B100H4Q2F2SG	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT	175 Cel	SILICON	1000 V		-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED						110.42 ns
NXH300B100H4Q2F2PG	Onsemi	N-CHANNEL	COMPLEX	NO	194 W	73 A	UNSPECIFIED	POWER CONTROL		2.25 V	UNSPECIFIED	RECTANGULAR	6		326 ns	59	FLANGE MOUNT	175 Cel	SILICON	1000 V		-40 Cel	20 V		5.9 V		UPPER	R-XUFM-X59		ISOLATED						110.42 ns
AFGHL40T65RQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	288 W	46 A	PLASTIC/EPOXY	POWER CONTROL		1.82 V	THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6.05 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR		TO-247	e3	30	260	74 ns
NXH75M65L4Q1PTG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V	MATTE TIN	UPPER	R-XUFM-X27		ISOLATED			e3			72 ns
NXH75M65L4Q1SG	Onsemi	N-CHANNEL	COMPLEX	NO	83 W	59 A	UNSPECIFIED	POWER CONTROL		2.22 V	UNSPECIFIED	RECTANGULAR	6		146 ns	27	FLANGE MOUNT	150 Cel	SILICON	650 V		-40 Cel	20 V		5.2 V		UPPER	R-XUFM-X27		ISOLATED						72 ns
FGHL75T65LQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	469 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		660 ns	4	FLANGE MOUNT	175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T4				TO-247	e3			60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.