SINGLE Other Function Transistors 174

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Manufacturers
    • Acrian
    • Allegro MicroSystems
    • Alpha & Omega Semiconductor
    • Analog Devices
    • Bourns
    • Broadcom
    • Calogic
    • Central Semiconductor
    • Continental Device India
    • Digitron Semiconductors
    • Diodes Incorporated
    • Diotec Semiconductor Ag
    • Fairchild Semiconductor
    • Forward International Electronics
    • Fujitsu
    • General Electric Solid State
    • Gpd Optoelectronics
    • Harris Semiconductor
    • Inchange Semiconductor
    • Infineon Technologies
    • International Rectifier
    • Jiangsu Changjiang Electronics Technology
    • Kodenshi Auk
    • Linear Integrated Systems
    • Micro Commercial Components
    • Microchip Technology
    • Microsemi
    • Micross Components
    • Mospec Semiconductor
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • Nte Electronics
    • Onsemi
    • Panjit International
    • Philips Semiconductors
    • Plessey Semiconductors Discrete Components Div
    • ROHM
    • Rectron
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sanken Electric
    • Secos
    • Semiconductors
    • Semitronics
    • Shantou Huashan Electronic Devices
    • Solitron Devices
    • Sumitomo Electric Device Innovations Usa
    • TE Connectivity
    • Taiwan Semiconductor
    • Texas Instruments
    • Thomson Consumer Electronics
    • Toshiba
    • Tt Electronics Plc
    • Unisonic Technologies
    • Vishay Intertechnology
    • Weitron Technology
    • Yangzhou Yangjie Electronics
    • Zetex Plc
Polarity or Channel Type
    • N-CHANNEL
    • N-CHANNEL AND P-CHANNEL
    • NPN
    • NPN AND PNP
    • P-CHANNEL
    • PNP
Configuration (1)
    • SINGLE
    • 2 BANKS, DARLINGTON
    • DARLINGTON
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • .004 MHz
    • .006 MHz
    • .0066 MHz
    • .02 MHz
    • .03 MHz
    • .05 MHz
    • .075 MHz
    • .08 MHz
    • .09 MHz
    • .2 MHz
    • .22 MHz
    • .25 MHz
    • .3 MHz
    • .35 MHz
    • .4 MHz
    • .5 MHz
    • .7 MHz
    • .75 MHz
    • .8 MHz
    • 1 MHz
    • 1.2 MHz
    • 1.3 MHz
    • 1.5 MHz
    • 1.6 MHz
    • 1.7 MHz
    • 10 MHz
    • 100 MHz
    • 1000 MHz
    • 10000 MHz
    • 102 MHz
    • 10500 MHz
    • 110 MHz
    • 1100 MHz
    • 11000 MHz
    • 11500 MHz
    • 12 MHz
    • 120 MHz
    • 1200 MHz
    • 12000 MHz
    • 125 MHz
    • 12500 MHz
    • 130 MHz
    • 1300 MHz
    • 13000 MHz
    • 135 MHz
    • 14 MHz
    • 140 MHz
    • 1400 MHz
    • 14000 MHz
    • 145 MHz
    • 15 MHz
    • 150 MHz
    • 1500 MHz
    • 15000 MHz
    • 16 MHz
    • 160 MHz
    • 1600 MHz
    • 16000 MHz
    • 17 MHz
    • 170 MHz
    • 1700 MHz
    • 17000 MHz
    • 175 MHz
    • 18 MHz
    • 180 MHz
    • 1800 MHz
    • 18000 MHz
    • 190 MHz
    • 2 MHz
    • 2.4 MHz
    • 2.5 MHz
    • 20 MHz
    • 200 MHz
    • 2000 MHz
    • 20000 MHz
    • 210 MHz
    • 21000 MHz
    • 220 MHz
    • 2200 MHz
    • 22000 MHz
    • 230 MHz
    • 24 MHz
    • 2400 MHz
    • 245 MHz
    • 25 MHz
    • 250 MHz
    • 2500 MHz
    • 260 MHz
    • 275 MHz
    • 280 MHz
    • 2800 MHz
    • 285 MHz
    • 3 MHz
    • 3.5 MHz
    • 30 MHz
    • 300 MHz
    • 3000 MHz
    • 30000 MHz
    • 320 MHz
    • 32000 MHz
    • 34 MHz
    • 3400 MHz
    • 350 MHz
    • 3500 MHz
    • 360 MHz
    • 3600 MHz
    • 36000 MHz
    • 380 MHz
    • 4 MHz
    • 4.3 MHz
    • 4.7 MHz
    • 40 MHz
    • 400 MHz
    • 4000 MHz
    • 42 MHz
    • 4200 MHz
    • 42000 MHz
    • 45 MHz
    • 450 MHz
    • 4500 MHz
    • 470 MHz
    • 4700 MHz
    • 5 MHz
    • 5.6 MHz
    • 50 MHz
    • 500 MHz
    • 5000 MHz
    • 5100 MHz
    • 55 MHz
    • 550 MHz
    • 5500 MHz
    • 580 MHz
    • 5800 MHz
    • 6 MHz
    • 6.5 MHz
    • 60 MHz
    • 600 MHz
    • 6000 MHz
    • 65 MHz
    • 650 MHz
    • 6500 MHz
    • 66 MHz
    • 675 MHz
    • 69 MHz
    • 7 MHz
    • 7.2 MHz
    • 7.5 MHz
    • 70 MHz
    • 700 MHz
    • 7000 MHz
    • 75 MHz
    • 750 MHz
    • 7500 MHz
    • 770 MHz
    • 78 MHz
    • 8 MHz
    • 80 MHz
    • 800 MHz
    • 8000 MHz
    • 820 MHz
    • 836 MHz
    • 85 MHz
    • 8500 MHz
    • 86 MHz
    • 9 MHz
    • 90 MHz
    • 900 MHz
    • 9000 MHz
    • 940 MHz
    • 95 MHz
    • 950 MHz
    • 9500 MHz
Maximum Power Dissipation (Abs)
    • .004 W
    • .02 W
    • .025 W
    • .03 W
    • .035 W
    • .036 W
    • .039 W
    • .04 W
    • .05 W
    • .054 W
    • .055 W
    • .06 W
    • .065 W
    • .0675 W
    • .075 W
    • .08 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
    • .13 W
    • .135 W
    • .14 W
    • .15 W
    • .16 W
    • .162 W
    • .165 W
    • .17 W
    • .171 W
    • .175 W
    • .18 W
    • .185 W
    • .19 W
    • .2 W
    • .205 W
    • .21 W
    • .22 W
    • .225 W
    • .23 W
    • .24 W
    • .25 W
    • .26 W
    • .27 W
    • .28 W
    • .29 W
    • .3 W
    • .31 W
    • .32 W
    • .325 W
    • .33 W
    • .337 W
    • .345 W
    • .35 W
    • .36 W
    • .375 W
    • .38 W
    • .386 W
    • .39 W
    • .4 W
    • .41 W
    • .415 W
    • .42 W
    • .425 W
    • .43 W
    • .445 W
    • .45 W
    • .48 W
    • .5 W
    • .515 W
    • .55 W
    • .56 W
    • .57 W
    • .58 W
    • .59 W
    • .6 W
    • .62 W
    • .625 W
    • .63 W
    • .65 W
    • .66 W
    • .68 W
    • .69 W
    • .7 W
    • .715 W
    • .725 W
    • .73 W
    • .735 W
    • .75 W
    • .76 W
    • .8 W
    • .83 W
    • .85 W
    • .87 W
    • .88 W
    • .9 W
    • .96 W
    • 1 W
    • 1.09 W
    • 1.1 W
    • 1.15 W
    • 1.17 W
    • 1.2 W
    • 1.25 W
    • 1.28 W
    • 1.3 W
    • 1.35 W
    • 1.38 W
    • 1.4 W
    • 1.42 W
    • 1.45 W
    • 1.48 W
    • 1.5 W
    • 1.51 W
    • 1.56 W
    • 1.6 W
    • 1.65 W
    • 1.68 W
    • 1.7 W
    • 1.75 W
    • 1.77 W
    • 1.8 W
    • 1.9 W
    • 10 W
    • 100 W
    • 1000 W
    • 11 W
    • 11.7 W
    • 110 W
    • 1100 W
    • 113 W
    • 114 W
    • 115 W
    • 117 W
    • 12 W
    • 12.5 W
    • 120 W
    • 1200 W
    • 125 W
    • 13 W
    • 130 W
    • 132 W
    • 136 W
    • 140 W
    • 145 W
    • 15 W
    • 150 W
    • 16 W
    • 160 W
    • 17 W
    • 170 W
    • 175 W
    • 176 W
    • 18 W
    • 180 W
    • 187 W
    • 19 W
    • 2 W
    • 2.01 W
    • 2.1 W
    • 2.2 W
    • 2.25 W
    • 2.3 W
    • 2.4 W
    • 2.5 W
    • 2.6 W
    • 2.8 W
    • 2.9 W
    • 20 W
    • 200 W
    • 21 W
    • 22 W
    • 220 W
    • 23 W
    • 233 W
    • 24 W
    • 25 W
    • 250 W
    • 26 W
    • 27 W
    • 28 W
    • 29 W
    • 290 W
    • 292 W
    • 3 W
    • 3.1 W
    • 3.3 W
    • 3.5 W
    • 3.57 W
    • 3.6 W
    • 3.7 W
    • 3.8 W
    • 3.9 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 320 W
    • 33 W
    • 35 W
    • 36 W
    • 37 W
    • 375 W
    • 38 W
    • 39 W
    • 390 W
    • 4 W
    • 4.025 W
    • 4.03 W
    • 4.15 W
    • 4.4 W
    • 4.6 W
    • 4.8 W
    • 40 W
    • 400 W
    • 41 W
    • 41.5 W
    • 42 W
    • 44 W
    • 45 W
    • 450 W
    • 46 W
    • 46.8 W
    • 49 W
    • 5 W
    • 5.3 W
    • 5.4 W
    • 5.5 W
    • 5.68 W
    • 5.8 W
    • 50 W
    • 52 W
    • 54 W
    • 55 W
    • 56 W
    • 57 W
    • 57.2 W
    • 583 W
    • 6 W
    • 6.25 W
    • 6.9 W
    • 60 W
    • 62 W
    • 62.5 W
    • 620 W
    • 625 W
    • 63 W
    • 65 W
    • 66 W
    • 67 W
    • 68 W
    • 7 W
    • 7.4 W
    • 7.5 W
    • 70 W
    • 71 W
    • 75 W
    • 770 W
    • 78 W
    • 8 W
    • 8.3 W
    • 8.33 W
    • 8.5 W
    • 8.7 W
    • 8.8 W
    • 80 W
    • 83 W
    • 85 W
    • 87 W
    • 88 W
    • 9 W
    • 9.7 W
    • 90 W
    • 91 W
    • 95 W
Maximum Collector Current (IC)
    • .000001 A
    • .000003 A
    • .00125 A
    • .002 A
    • .0025 A
    • .003 A
    • .005 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .012 A
    • .015 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .03 A
    • .035 A
    • .036 A
    • .04 A
    • .045 A
    • .05 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .11 A
    • .12 A
    • .125 A
    • .14 A
    • .15 A
    • .18 A
    • .2 A
    • .21 A
    • .22 A
    • .25 A
    • .3 A
    • .31 A
    • .32 A
    • .33 A
    • .35 A
    • .4 A
    • .425 A
    • .44 A
    • .5 A
    • .6 A
    • .7 A
    • .73 A
    • .75 A
    • .8 A
    • 1 A
    • 1.2 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 100 A
    • 12 A
    • 13 A
    • 15 A
    • 150 A
    • 16 A
    • 18 A
    • 2 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 20 A
    • 200 A
    • 24 A
    • 25 A
    • 28 A
    • 3 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.8 A
    • 30 A
    • 4 A
    • 4.2 A
    • 4.4 A
    • 4.5 A
    • 4.7 A
    • 4.9 A
    • 40 A
    • 5 A
    • 5.2 A
    • 5.6 A
    • 5.7 A
    • 50 A
    • 6 A
    • 6.2 A
    • 6.3 A
    • 6.5 A
    • 6.6 A
    • 7 A
    • 7.5 A
    • 75 A
    • 8 A
    • 8.5 A
    • 9 A
Package Body Material
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
Maximum Rise Time (tr)
    • 53 ns
Maximum VCEsat
    • .235 V
    • .3 V
    • .31 V
Terminal Form
    • NO LEAD
Package Shape
    • RECTANGULAR
Operating Mode
    • DEPLETION MODE
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
Highest Frequency Band
    • L BAND
    • X BAND
Maximum Fall Time (tf)
    • 62 ns
Maximum Drain Current (Abs) (ID)
    • .02 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .125 A
    • .13 A
    • .14 A
    • .15 A
    • .17 A
    • .18 A
    • .2 A
    • .22 A
    • .23 A
    • .25 A
    • .26 A
    • .3 A
    • .33 A
    • .35 A
    • .4 A
    • .41 A
    • .43 A
    • .46 A
    • .48 A
    • .5 A
    • .53 A
    • .54 A
    • .55 A
    • .6 A
    • .65 A
    • .67 A
    • .68 A
    • .7 A
    • .72 A
    • .725 A
    • .75 A
    • .8 A
    • .9 A
    • .91 A
    • 1 A
    • 1.07 A
    • 1.1 A
    • 1.17 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 100 A
    • 11 A
    • 11.5 A
    • 110 A
    • 12 A
    • 12.5 A
    • 120 A
    • 13 A
    • 13.5 A
    • 137 A
    • 14 A
    • 14.9 A
    • 15 A
    • 15.8 A
    • 150 A
    • 16 A
    • 17 A
    • 18 A
    • 19 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 2.8 A
    • 2.9 A
    • 20 A
    • 21 A
    • 22 A
    • 23 A
    • 25 A
    • 26 A
    • 27 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.7 A
    • 3.8 A
    • 3.9 A
    • 30 A
    • 31 A
    • 34 A
    • 35 A
    • 36 A
    • 38 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.66 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 40 A
    • 42 A
    • 44 A
    • 45 A
    • 46 A
    • 5 A
    • 5.2 A
    • 5.3 A
    • 5.4 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 50 A
    • 55 A
    • 6 A
    • 6.1 A
    • 6.2 A
    • 6.4 A
    • 6.5 A
    • 6.6 A
    • 6.9 A
    • 60 A
    • 65 A
    • 7 A
    • 7.2 A
    • 7.4 A
    • 7.5 A
    • 7.9 A
    • 70 A
    • 75 A
    • 8 A
    • 8.2 A
    • 8.3 A
    • 8.5 A
    • 8.8 A
    • 8.9 A
    • 80 A
    • 83 A
    • 9 A
    • 9.4 A
    • 9.5 A
    • 9.7 A
    • 9.8 A
No. of Terminals
    • 3
Package Style (Meter)
    • CHIP CARRIER
Sub-Category
    • Other Transistors
Field Effect Transistor Technology
    • JUNCTION
    • METAL SEMICONDUCTOR
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .1 W
    • .125 W
    • .13 W
    • .15 W
    • .165 W
    • .2 W
    • .22 W
    • .24 W
    • .25 W
    • .27 W
    • .3 W
    • .35 W
    • .4 W
    • .5 W
    • .8 W
    • 1 W
    • 1.9 W
    • 100 W
    • 110 W
    • 125 W
    • 185 W
    • 2.1 W
    • 2.5 W
    • 22 W
    • 25 W
    • 37.5 W
    • 4.2 W
    • 5 W
    • 50 W
    • 6 W
    • 7 W
    • 7.5 W
    • 90 W
Minimum DC Current Gain (hFE)
    • .07
    • .5
    • 1.5
    • 10
    • 100
    • 1000
    • 10000
    • 106
    • 11
    • 110
    • 12
    • 120
    • 1200
    • 12000
    • 125
    • 130
    • 135
    • 14
    • 140
    • 145
    • 15
    • 150
    • 1500
    • 155
    • 16
    • 160
    • 1600
    • 167
    • 17
    • 170
    • 175
    • 18
    • 180
    • 19
    • 190
    • 2
    • 2.2
    • 20
    • 200
    • 2000
    • 20000
    • 22
    • 220
    • 225
    • 230
    • 235
    • 24
    • 240
    • 25
    • 250
    • 25000
    • 260
    • 27
    • 270
    • 275
    • 28
    • 280
    • 290
    • 3
    • 3.5
    • 30
    • 300
    • 3000
    • 32
    • 320
    • 3200
    • 33
    • 34
    • 35
    • 350
    • 36
    • 360
    • 38
    • 380
    • 39
    • 390
    • 4
    • 40
    • 400
    • 4000
    • 42
    • 420
    • 45
    • 450
    • 470
    • 480
    • 49
    • 5
    • 5.3
    • 50
    • 500
    • 5000
    • 53
    • 54
    • 55
    • 56
    • 560
    • 6
    • 60
    • 600
    • 63
    • 630
    • 64
    • 65
    • 67
    • 7
    • 7.5
    • 70
    • 700
    • 7000
    • 72
    • 75
    • 750
    • 78
    • 8
    • 80
    • 800
    • 8000
    • 82
    • 85
    • 9
    • 90
    • 95
    • 96
    • 99
Maximum Operating Temperature
    • 100 Cel
    • 115 Cel
    • 125 Cel
    • 135 Cel
    • 140 Cel
    • 150 Cel
    • 155 Cel
    • 160 Cel
    • 175 Cel
    • 180 Cel
    • 200 Cel
    • 250 Cel
    • 300 Cel
    • 55 Cel
    • 60 Cel
    • 70 Cel
    • 71 Cel
    • 75 Cel
    • 80 Cel
    • 85 Cel
    • 90 Cel
    • 95 Cel
Maximum Collector-Base Capacitance
    • .15 pF
    • .45 pF
Transistor Element Material
    • GERMANIUM
    • SILICON
    • SILICON GERMANIUM
Maximum Collector-Emitter Voltage
    • 4 V
    • 4.5 V
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • Matte Tin (Sn) - with Nickel (Ni) barrier
    • NICKEL PALLADIUM GOLD
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER
    • TIN SILVER COPPER
    • TIN SILVER COPPER NICKEL
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Silver/Copper (Sn/Ag/Cu)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Maximum Drain Current (ID)
    • .02 A
    • .04 A
    • .05 A
    • .06 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .125 A
    • .13 A
    • .14 A
    • .15 A
    • .17 A
    • .18 A
    • .2 A
    • .22 A
    • .23 A
    • .25 A
    • .26 A
    • .3 A
    • .33 A
    • .35 A
    • .4 A
    • .41 A
    • .43 A
    • .46 A
    • .48 A
    • .5 A
    • .53 A
    • .54 A
    • .55 A
    • .6 A
    • .65 A
    • .67 A
    • .68 A
    • .7 A
    • .72 A
    • .725 A
    • .75 A
    • .8 A
    • .9 A
    • .91 A
    • 1 A
    • 1.07 A
    • 1.1 A
    • 1.17 A
    • 1.2 A
    • 1.3 A
    • 1.4 A
    • 1.5 A
    • 1.6 A
    • 1.7 A
    • 1.8 A
    • 10 A
    • 10.2 A
    • 100 A
    • 11 A
    • 11.5 A
    • 110 A
    • 12 A
    • 12.5 A
    • 120 A
    • 13 A
    • 13.5 A
    • 137 A
    • 14 A
    • 14.9 A
    • 15 A
    • 15.8 A
    • 150 A
    • 16 A
    • 17 A
    • 18 A
    • 19 A
    • 2 A
    • 2.1 A
    • 2.2 A
    • 2.3 A
    • 2.4 A
    • 2.5 A
    • 2.6 A
    • 2.7 A
    • 2.8 A
    • 2.9 A
    • 20 A
    • 21 A
    • 22 A
    • 23 A
    • 25 A
    • 26 A
    • 27 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.3 A
    • 3.4 A
    • 3.5 A
    • 3.6 A
    • 3.7 A
    • 3.8 A
    • 3.9 A
    • 30 A
    • 31 A
    • 34 A
    • 35 A
    • 36 A
    • 38 A
    • 4 A
    • 4.1 A
    • 4.2 A
    • 4.3 A
    • 4.4 A
    • 4.5 A
    • 4.6 A
    • 4.66 A
    • 4.7 A
    • 4.8 A
    • 4.9 A
    • 40 A
    • 42 A
    • 44 A
    • 45 A
    • 46 A
    • 5 A
    • 5.2 A
    • 5.3 A
    • 5.4 A
    • 5.5 A
    • 5.6 A
    • 5.7 A
    • 5.8 A
    • 50 A
    • 55 A
    • 6 A
    • 6.1 A
    • 6.2 A
    • 6.4 A
    • 6.5 A
    • 6.6 A
    • 6.9 A
    • 60 A
    • 65 A
    • 7 A
    • 7.2 A
    • 7.4 A
    • 7.5 A
    • 7.9 A
    • 70 A
    • 75 A
    • 8 A
    • 8.2 A
    • 8.3 A
    • 8.5 A
    • 8.8 A
    • 8.9 A
    • 80 A
    • 83 A
    • 9 A
    • 9.4 A
    • 9.5 A
    • 9.7 A
    • 9.8 A
Terminal Position
    • BOTTOM
JESD-30 Code
    • R-XBCC-N3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
Case Connection
    • COLLECTOR
Qualification
    • Qualified
Additional Features
    • HIGH RELIABILITY, LOW NOISE
    • LOW NOISE
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
Peak Reflow Temperature (C)
    • 235
    • 240
    • 245
    • 255
    • 260
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SC4783-T1-A

Renesas Electronics

NPN

SINGLE

YES

150 MHz

.2 W

.1 A

1

Other Transistors

90

150 Cel

TIN BISMUTH

e6

2SC4942-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

2 W

1 A

1

Other Transistors

30

150 Cel

STX93003-AP

STMicroelectronics

PNP

SINGLE

NO

1.5 W

1 A

1

Other Transistors

16

150 Cel

Matte Tin (Sn)

e3

SSM3J16CT(TPL3)

Toshiba

P-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

NDS9407-G

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

3 A

1

e3

30

260

BCP69-16/DG,115

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.35 W

2 A

1

Other Transistors

100

150 Cel

2SA1827S-AY

Onsemi

PNP

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731S-AY

Onsemi

NPN

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731T-AY

Onsemi

NPN

SINGLE

NO

1.5 W

4 A

1

Other Transistors

200

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

EC3H02BA-TL-H

Onsemi

NPN

SINGLE

YES

5000 MHz

.1 W

.07 A

1

Other Transistors

120

150 Cel

1

PMR670UPE,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.48 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.48 A

1

e3

30

260

MCH6331-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3.5 A

1

e6

PMN40UPE,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

6 A

1

e3

30

260

PMN27XPE,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4.4 A

1

e3

30

260

PMN50UPE,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

5 W

ENHANCEMENT MODE

1

3.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

3.6 A

1

e3

30

260

MT3S113P(TE12L,F)

Toshiba

NPN

SINGLE

YES

5500 MHz

1.6 W

.1 A

1

Other Transistors

200

150 Cel

2SC5095O(TE85L,F)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.015 A

1

Other Transistors

80

125 Cel

2SC5087Y(TE85L,F)

Toshiba

NPN

SINGLE

YES

5000 MHz

.15 W

.08 A

1

Other Transistors

120

125 Cel

2SC5085Y(TE85L,F)

Toshiba

NPN

SINGLE

YES

5000 MHz

.1 W

.08 A

1

Other Transistors

120

125 Cel

SSM3J129TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

4.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.6 A

SSM3J15CT(TPL3)

Toshiba

P-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM3J14T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.7 A

SSM3J118TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

SSM3J306T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

SSM3J307T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

SSM3J321T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.2 A

SSM3J108TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

SSM6J206FE(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

PMFPB8040XP,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

6.25 W

ENHANCEMENT MODE

1

3.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

3.7 A

1

e3

30

260

TIP47-S

Bourns

NPN

SINGLE

NO

40 W

1 A

1

Other Transistors

30

150 Cel

SSM5G10TU(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.5 A

HN1C03FU-A(TE85L,F)

Toshiba

NPN

SINGLE

YES

.2 W

.3 A

1

Other Transistors

200

150 Cel

2SA1483Y(TE12L,F)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

120

150 Cel

2SA1987O(Q)

Toshiba

PNP

SINGLE

NO

180 W

15 A

1

Other Transistors

80

150 Cel

2SC5200O(Q)

Toshiba

NPN

SINGLE

NO

150 W

15 A

1

Other Transistors

80

150 Cel

30

260

BD244B-S

Bourns

PNP

SINGLE

NO

65 W

6 A

1

Other Transistors

15

150 Cel

BD244C-S

Bourns

PNP

SINGLE

NO

65 W

6 A

1

Other Transistors

15

150 Cel

TTC008(Q)

Toshiba

NPN

SINGLE

NO

1.1 W

1.5 A

1

Other Transistors

80

150 Cel

TTA0002(Q)

Toshiba

PNP

SINGLE

NO

180 W

18 A

1

Other Transistors

80

150 Cel

TTC012(Q)

Toshiba

NPN

SINGLE

NO

1.1 W

2 A

1

Other Transistors

80

150 Cel

NTLUS3A40PZCTAG

Onsemi

P-CHANNEL

SINGLE

YES

3.8 W

ENHANCEMENT MODE

1

6.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

6.4 A

1

e3

30

260

NTLUS3A39PZCTBG

Onsemi

P-CHANNEL

SINGLE

YES

2.3 W

ENHANCEMENT MODE

1

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.2 A

1

e3

30

260

NJW44H11G

Onsemi

NPN

SINGLE

NO

120 W

10 A

1

Other Transistors

80

150 Cel

Matte Tin (Sn) - annealed

e3

2SJ665-DL-E

Onsemi

P-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

27 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

27 A

e6

2SC2812-5-TB-E

Onsemi

NPN

SINGLE

YES

.2 W

.15 A

1

Other Transistors

135

150 Cel

Tin/Bismuth (Sn/Bi)

1

e6

2SA1855S-AY

Onsemi

PNP

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4837S-AY

Onsemi

NPN

SINGLE

NO

1.5 W

4 A

1

Other Transistors

140

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

5HP01C-TB-H

Onsemi

P-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.07 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.07 A

1

e6

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.