SINGLE Other Function Transistors 174

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Peak Reflow Temperature (C)
BCX5416H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		100	150 Cel	TIN		1	e3	245
BCX55H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		40	150 Cel	TIN		1	e3
BCX56H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		40	150 Cel	TIN		1	e3
BCP5116H6433XTMA1	Infineon Technologies	PNP	SINGLE	YES		2 W	1 A		1		Other Transistors		100	150 Cel			1
2SC3074-O(Q)	Toshiba	NPN	SINGLE	YES		20 W	5 A		1		Other Transistors		70	150 Cel
2SC3074-Y(Q)	Toshiba	NPN	SINGLE	YES		20 W	5 A		1		Other Transistors		120	150 Cel
CJD47TR13PBFREE	Central Semiconductor	NPN	SINGLE	YES	10 MHz	15 W	1 A		1		Other Transistors		30	150 Cel
BF357	Texas Instruments	NPN	SINGLE	NO	1.6 MHz	.2 W	.05 A		1		Other Transistors			150 Cel
BFW20	Texas Instruments	PNP	SINGLE	NO	40 MHz	.36 W			1		Other Transistors			175 Cel
BC857BTE6327	Infineon Technologies	PNP	SINGLE	YES		.25 W	.1 A		1		Other Transistors		220	150 Cel			1		260
BSS83PE6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		.36 W		ENHANCEMENT MODE	1	.33 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.33 A	1		260
BC847BTE6327	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A		1		Other Transistors		200	150 Cel			1		260
BFP540FE6327	Infineon Technologies	NPN	SINGLE	YES	21000 MHz	.25 W	.08 A		1		Other Transistors		50	150 Cel			1		260
FDV304P_NB8U003	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		.35 W		ENHANCEMENT MODE	1	.46 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.46 A
BC635-16,126	NXP Semiconductors	NPN	SINGLE	NO	100 MHz	.83 W	1 A		1		Other Transistors		100	150 Cel
PBSS4160K,115	NXP Semiconductors	NPN	SINGLE	YES	150 MHz	.425 W	1 A		1		Other Transistors		100	150 Cel
PBSS4350S,126	NXP Semiconductors	NPN	SINGLE	NO	100 MHz	.83 W	3 A		1		Other Transistors		100	150 Cel
PBSS5160K,115	NXP Semiconductors	PNP	SINGLE	YES	150 MHz	.425 W	1 A		1		Other Transistors		100	150 Cel
PBSS8110AS,126	NXP Semiconductors	NPN	SINGLE	NO	100 MHz	.83 W	1 A		1		Other Transistors		80	150 Cel
PBSS8110S,126	NXP Semiconductors	NPN	SINGLE	NO	100 MHz	.83 W	1 A		1		Other Transistors		80	150 Cel
PBSS9110AS,126	NXP Semiconductors	PNP	SINGLE	NO	100 MHz	.83 W	1 A		1		Other Transistors		125	150 Cel
PH2369,126	NXP Semiconductors	NPN	SINGLE	NO	500 MHz	.5 W	.2 A		1		Other Transistors		40	150 Cel
PMEM4030NS,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	1 W	2 A		1		Other Transistors		80	150 Cel
PMEM4030PS,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	1 W	2 A		1		Other Transistors		80	150 Cel
PN2369A,126	NXP Semiconductors	NPN	SINGLE	NO	500 MHz	.5 W	.2 A		1		Other Transistors		40	150 Cel
FDC640P_F095	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		1.6 W		ENHANCEMENT MODE	1	4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.5 A
BUD42D-001	Onsemi	NPN	SINGLE	NO		25 W	4 A		1		Other Transistors		8	150 Cel	TIN LEAD		1	e0	235
BC337-025	Onsemi	NPN	SINGLE	NO		1.5 W	.8 A		1		Other Transistors		160	150 Cel	TIN LEAD			e0	235
BC337-040	Onsemi	NPN	SINGLE	NO		1.5 W	.8 A		1		Other Transistors		250	150 Cel	TIN LEAD			e0	235
BFR360TE6327	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.21 W	.035 A		1		Other Transistors		60	150 Cel			1		260

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.