NO Power Field Effect Transistors (FET) 2,212

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SEF120

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2N3819-D27Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.35 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.05 A

e3

2SK3305-S-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

FQPF6N90CT

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

56 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6 A

e3

VNP10N06-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

42 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

RDX045N60FU6

ROHM

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

BLF6G20-180PN,112

NXP Semiconductors

N-CHANNEL

NO

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PHP165NQ08T,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

75 A

AOTF4N60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AOTF5N50

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

203 mJ

5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

52.4 ns

-55 Cel

70.4 ns

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

5.9 pF

AOTF7N65

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38.5 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

347 mJ

7 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

97 ns

-55 Cel

128 ns

1.56 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

9 pF

AOT480L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

333 W

ENHANCEMENT MODE

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

AOTF9N70

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

154 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.2 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

11 pF

AOI4126

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

43 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

43 A

BUK652R7-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK6507-75C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

BUK7510-55AL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

122 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

122 A

e3

BUK753R4-30B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

75 A

e3

BUK7E07-55B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

203 W

ENHANCEMENT MODE

1

119 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

119 A

e3

BUK7E4R3-75C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

333 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

e3

PSMN050-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

56 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

22 A

1

e3

2SK3700(F)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

30

260

2SK4021(Q)

Toshiba

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

2SK2719(F)

Toshiba

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK2744(F)

Toshiba

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

2SK2847(F)

Toshiba

N-CHANNEL

SINGLE

NO

85 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SK2917(F)

Toshiba

N-CHANNEL

SINGLE

NO

90 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

2SK2995(F)

Toshiba

N-CHANNEL

SINGLE

NO

90 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

2SK2967(F)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

2SK3132(Q)

Toshiba

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

2SK4017(Q)

Toshiba

N-CHANNEL

SINGLE

NO

20 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

PSMN5R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

61 A

AOW4S60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AOWF4S60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

25 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

BUK653R3-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

PSMN7R0-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

57 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

TK12J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

144 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TK20J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

190 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

TK15J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

170 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

PSMN016-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

46.1 W

ENHANCEMENT MODE

1

32.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32.1 A

PSMN027-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

41.1 W

ENHANCEMENT MODE

1

23.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

23.4 A

2SK3820-DL-E

Onsemi

N-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

84.5 mJ

26 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.65 W

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.08 ohm

26 A

SINGLE

R-PSIP-T3

1

e6

110 pF

PSMN013-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

48.4 W

ENHANCEMENT MODE

1

35.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

35.2 A

AOTF240L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

41 W

ENHANCEMENT MODE

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

85 A

AOTF12N30

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

430 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.42 ohm

11.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

11 pF

PSMN5R0-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

63.8 W

ENHANCEMENT MODE

1

67.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

67.5 A

PSMN4R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

63.8 W

ENHANCEMENT MODE

1

70.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70.4 A

BUK754R7-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

234 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.