NO Power Field Effect Transistors (FET) 2,212

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STP10NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.6 ohm

8 A

SINGLE

R-PSFM-T3

TO-220AB

e3

STP11N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

170 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.51 ohm

10 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-220AB

STP210N75F6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0037 ohm

120 A

SINGLE

R-PSFM-T3

TO-220AB

e3

STP23NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

254 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

17 A

SINGLE

R-PSFM-T3

TO-220AB

e3

STP3LN62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

620 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

90 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

2.5 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-220AB

STP52N25M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

230 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.065 ohm

28 A

SINGLE

R-PSFM-T3

ULTRA LOW-ON RESISTANCE

TO-220AB

STP5N62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

620 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16.8 A

120 mJ

4.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.6 ohm

4.2 A

SINGLE

R-PSFM-T3

ULTRA LOW-ON RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP6N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

110 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.2 ohm

5 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-220AB

e3

STP80N70F4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

68 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

185 mJ

85 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0098 ohm

85 A

SINGLE

R-PSFM-T3

TO-220AB

e3

STU3LN62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

620 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

90 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

2.5 A

SINGLE

R-PSIP-T3

ULTRA-LOW RESISTANCE

TO-251

NOT SPECIFIED

NOT SPECIFIED

STW23NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

254 mJ

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.19 ohm

17 A

SINGLE

R-PSFM-T3

TO-247

e3

STW34NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

116 A

345 mJ

29 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.11 ohm

29 A

SINGLE

R-PSFM-T3

DRAIN

ULTRA-LOW RESISTANCE

TO-247

e3

STW36NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

116 A

345 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

29 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

1.75 pF

STW47NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

1000 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.088 ohm

35 A

SINGLE

R-PSFM-T3

TO-247

e3

STW54NM65ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

196 A

850 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.065 ohm

49 A

SINGLE

R-PSFM-T3

TO-247

e3

STW60N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

1400 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.059 ohm

46 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-247

e3

STW62NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.048 ohm

55 A

SINGLE

R-PSFM-T3

TO-247

e3

STI24NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

300 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

17 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STI300N4F6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.002 ohm

160 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STW56NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

45 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

45 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

STF11N65K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

212 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NTDV3055L104-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.104 ohm

12 A

SINGLE

R-PSIP-T3

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

STI11NM80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

400 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.4 ohm

11 A

SINGLE

R-PSIP-T3

ULTRA-LOW RESISTANCE

TO-262AA

e3

STI260N6F6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

120 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.003 ohm

120 A

SINGLE

R-PSIP-T3

TO-262AA

e3

STI26NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

610 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.165 ohm

20 A

SINGLE

R-PSIP-T3

TO-262AA

SIHG73N60E-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

236 A

2030 mJ

73 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

73 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

RCX450N20

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

160 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.055 ohm

45 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

e1

10

260

QJD1210011

Powerex

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

250 A

20

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

.025 ohm

100 A

UPPER

R-PUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

NDF08N50ZH

Onsemi

N-CHANNEL

SINGLE

NO

35 W

1

8.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.5 A

e3

NDF11N50ZH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

420 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.52 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NTP5860NLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

660 A

735 mJ

220 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0036 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

STI13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

200 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.36 ohm

11 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STU13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

200 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.36 ohm

11 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

STW12NK60Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

10 A

e3

STF130N10F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

125 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0096 ohm

46 A

SINGLE

R-PSFM-T3

ISOLATED

ULTRA LOW RESISTANCE

TO-220AB

STFI26NM60N

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

STP130N10F3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

450 A

125 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0096 ohm

120 A

SINGLE

R-PSFM-T3

ULTRA LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

DMG4N65CT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.14 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

456 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

4 A

SINGLE

R-PSFM-T3

1

HIGH RELIABILITY

TO-220AB

e3

30

260

AEC-Q101

IPU60R1K4C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

26 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.4 ohm

SINGLE

R-PSIP-T3

TO-251AA

e3

NP60N04MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N055MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

176 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.