| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
485 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
485 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
485 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
485 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
485 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
485 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.19 ohm |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
35 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0048 ohm |
70 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35.2 A |
70 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.3 ohm |
8.8 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17 A |
230 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.7 ohm |
6.6 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
460 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.33 ohm |
13.4 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
460 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.33 ohm |
13.4 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
690 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.22 ohm |
20.7 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
316 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.003 ohm |
79 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
336 A |
235 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0032 ohm |
84 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
680 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0037 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
77 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0057 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
290 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0057 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
172 A |
43 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0093 ohm |
43 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
110 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.01 ohm |
40 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
148 A |
740 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0105 ohm |
37 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
59 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.018 ohm |
28 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
436 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.199 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
345 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.25 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
289 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.299 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
246 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.35 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
215 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.399 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
166 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.52 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
82 A |
708 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.125 ohm |
25 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
290 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.299 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
165 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0037 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
332 A |
330 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0111 ohm |
83 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
350 A |
50 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0114 ohm |
50 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
TO-251 |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
70 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0135 ohm |
40 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
TO-251 |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
136 W |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
120 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.011 ohm |
75 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-251 |
e3 |
||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
436 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.199 ohm |
17 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
31 A |
345 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.25 ohm |
13 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
289 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.299 ohm |
12 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
215 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.399 ohm |
9 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
e3 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
93 A |
800 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.105 ohm |
31 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
15 A |
144 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.6 ohm |
6.1 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
510 mJ |
100 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.00375 ohm |
100 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
|||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
160 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0062 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
230 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0076 ohm |
100 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
230 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0076 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
93 A |
800 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.099 ohm |
31 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
93 A |
800 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.105 ohm |
31 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
345 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.25 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
290 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.299 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.