NO Power Field Effect Transistors (FET) 2,212

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STF34NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

116 A

345 mJ

29 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

29 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STW34NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

116 A

345 mJ

29 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.105 ohm

29 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-247

e3

IPS031N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

60 mJ

90 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.004 ohm

90 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251

e3

IPU050N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

68 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

60 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0073 ohm

50 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251AA

e3

IPU060N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

60 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

50 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251

e3

IPU075N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

47 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

50 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0114 ohm

50 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251

e3

IPU090N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

70 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0135 ohm

40 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251

e3

IPU105N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

245 A

30 mJ

35 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

35 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251AA

e3

IPU135N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

20 mJ

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0135 ohm

30 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251AA

e3

IPP080N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

47 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

50 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0119 ohm

48 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP096N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

245 A

40 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0141 ohm

35 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP114N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

30 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0114 ohm

30 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP147N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

20 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0217 ohm

20 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

FDA20N50-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1110 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

FQH44N10-F133

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

192 A

530 mJ

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.039 ohm

48 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AB

e3

FDH50N50-F133

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

192 A

1868 mJ

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.105 ohm

48 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQA13N80-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50.4 A

1100 mJ

12.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.75 ohm

12.6 A

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FCH041N60F-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2025 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

242 ns

-55 Cel

514 ns

.041 ohm

76 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FCPF190N60E-F152

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

61.8 A

400 mJ

20.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

94 ns

-55 Cel

252 ns

Matte Tin (Sn) - annealed

.19 ohm

20.6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

165 pF

FQP13N50C-F105

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

860 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

SINGLE

R-PSFM-T3

TO-220AB

e3

STP65N150M9

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

AOTF7S65

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

NOT SPECIFIED

NOT SPECIFIED

IPA65R110CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34.7 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

31.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA65R150CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34.7 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.15 ohm

22.4 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPI65R190CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

151 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57.2 A

484 mJ

17.5 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.19 ohm

17.5 A

SINGLE

R-PSIP-T3

TO-262AA

e3

NOT SPECIFIED

NOT SPECIFIED

IPW65R110CFDFKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

277.8 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

31.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

TO-247

e3

IPW65R150CFDFKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.15 ohm

22.4 A

SINGLE

R-PSFM-T3

TO-247

e3

IPA65R420CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31.2 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

227 mJ

8.7 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.42 ohm

8.7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPP65R420CFDXKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

227 mJ

8.7 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.42 ohm

8.7 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IPW65R420CFDFKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

227 mJ

8.7 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.42 ohm

8.7 A

SINGLE

R-PSFM-T3

TO-247

e3

MSCSM120AM027CD3AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

2970 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1400 A

733 A

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.0035 ohm

733 A

UPPER

R-XUFM-X7

ISOLATED

.23 pF

SCT30N120H

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

40 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.1 ohm

40 A

SINGLE

R-PSFM-T3

1

DRAIN

e3

245

25 pF

FCPF190N60E-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

61.8 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

94 ns

-55 Cel

252 ns

Matte Tin (Sn) - annealed

.19 ohm

20.6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

165 pF

FCPF190N60-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60.6 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

80 ns

-55 Cel

158 ns

Matte Tin (Sn) - annealed

.199 ohm

20.2 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

128 pF

FCPF260N60E-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

292.5 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

82 ns

-55 Cel

224 ns

Matte Tin (Sn) - annealed

.26 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

130 pF

FCPF260N65FL1-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

293 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

36 W

150 Cel

SILICON

86 ns

-55 Cel

140 ns

Matte Tin (Sn) - annealed

.26 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

1 pF

FCPF400N80ZL1-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

339 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

84 ns

-55 Cel

127 ns

Matte Tin (Sn) - annealed

.4 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

.5 pF

NVH050N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

403 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

830 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.05 ohm

58 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

13 pF

AEC-Q101

NVH4L027N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

187.5 A

1610 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0274 ohm

75 A

SINGLE

R-PSFM-T4

TO-247

e3

26 pF

AEC-Q101

NVHL050N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

403 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

830 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.05 ohm

58 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

13 pF

AEC-Q101

NVH4L018N075SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

750 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

483 A

162 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.018 ohm

140 A

SINGLE

R-PSFM-T4

1

TO-247

e3

30

260

31 pF

AEC-Q101

NVHL040N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

NVHL065N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

337 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

115 A

635 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NOT SPECIFIED

NOT SPECIFIED

11 pF

AEC-Q101

NVHL082N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.082 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

NTHL099N60S5

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

184 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

95 A

232 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.099 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NVH082N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.082 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

AEC-Q101

NTHL019N60S5F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

568 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

393 A

1208 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.019 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

NTHL120N60S5Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

81 A

191 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.12 ohm

28 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.